Pallab Bhattacharya " Semiconductor Optoelectronic Devices (second edition)," pp. 373-374, 1997.
 R. J. McIntyre," Multiplication noise in uniform avalanche diodes," IEEE Trans. Electron Devices, vol. ED-13, pp. 164-168, 1966.
 G. E. Bulman, V. M. Robbins, K. F. Brennan, K. Hess, and G. E. Stillman, "Experimental determination of impact ionization coefficients in (100) GaAs," IEEE Electron Device Lett., vol. EDL-4, pp. 181-185, 1983.
 K. Brennan, "Theory of electron and hole impact ionization in quantum well and staircase superlattice avalanche photodiode structures," IEEE Trans. Electron Devices, vol. ED-32, pp. 2197-2205, 1985.
 H. Blauvelt, S. Margalit, and A. Yariv, "Single-carrier-type dominated impact ionisation in multilayer structures," Electron. Lett., vol. 18, pp. 375-376, 1982.
 K. Brennan, "Theory of the GaInAs/A1InAs-doped quantum well APD: A new low-noise solid-state photodetector for lightwave communication systems, " IEEE Trans. Electron Devices, vol. ED-33, 1653-1695, 1986.
 K. Brennan, "Theory of the doped quantum well superlattice APD: A new solid state photomultiplier," IEEE J. Quantum Electron., vol. QE-22, pp. 1999-2016, 1986.
 K. Brennan, "The pn junction quantum well APD: A new solid state Photodetector for lightwave communications systems and on-chip detector applications," IEEE Trans. Electron Devices, vol. ED-34, pp. 782-792, 1987.
 K. Brennan, "The p-n heterojunction quantum well APD: A new high-gain low-noise high-speed photodetector suitable for lightwave communications and digital applications," IEEE Trans. Electron Devices, vol. ED-34, pp. 793-803, 1987.
 K. Brennan, "Optimization and modeling of avalanche photodiode structures: Application to a new class of superlattice photodetectors, the p-i-n, p-n homojunction, and p-n heterojunction APD's," IEEE Trans. Electron Devices, vol. ED-34, pp. 1658--1669, 1987.
 F. Capasso, "Physics of avalanche photodiodes," in Semiconductors and Semimetals, R. K. Willardson and A. C. Beer, Eds. Lightwave Communications Technology, W. T. Tsang, Ed. New York:Academic, 1985, vol. 22, part D, pp. 1-172.
 F. Osaka, T. Mikawa and O. Wada, “ Electron and hole impact ionization rates in InP/Ga0.47In0.53As superlattice,” IEEE J. Quantum Electron., vol. QE-22, pp. 1986-1991,1996.
 K. Brennan, K. Hess and F. Capasso, “Physics of the enhancement of impact ionization in multiquantum well structures” Appl. Phys. Lett., vol. 50, no. 26, pp. 1897-1899, 1987.
 W. Maes, K. De Meyer and R. Van Overstraeten, “Impact ionization in silicon: a review and update,” Solid-State Electronics, vol. 33, no. 6, pp. 705-718, 1990.
 K. M. Van Vliet, and L. M. Rucker, "Theory of carrier multiplication and noise in avalanche devices - Part I: One-carrier processes," IEEE Trans. Electron Devices, vol. ED-26, pp. 746-751, 1979.
 K. M. Van Vliet, A. Friedmann, and L. M. Rucker, "Theory of carrier multiplication and noise in avalanche devices - Part II: Two-carrier processes," IEEE Trans. Electron Devices, vol. ED-26, pp. 752-764, 1979.
 R. S. Fyath, J. J. O'Reilly, "Multilayer APDs producing up to two impact ionisations per carrier per stage: Optical receiver performance analysis," IEE Proc., vol. 135, Pt. J, pp. 101-105, 1988.
 P. A. Wolff, Physics Review, vol. 95, pp. 1415, 1945
 NAGIB Z. HAKIM, BAHAA E.A SALEH and MALVIN C. TEICH, follow, IEEE “Generalized excess noise factor for APD of arbitrary structure, ” IEEE Trans. Electron Devices. vol. 37, NO 3, march, 1990.
 F. Capasso, W. T. Tsang, and G. F. Williams, “Staircase solid state photomultipliers and avalanche photodiodes with enhanced ionization rate ratio,” IEEE Trans. Electron Devices, vol. ED-30, pp. 381-390, 1982.
 F. Capasso, W. T. Tsang, A. L. Hutchinson, and G. P. Williams, “Enhancement of electron impact ionization in superlattice: A new avalanche photodiode with large ionization rates ratio,” Appl. Phys. Lett., vol. 40, pp. 38-40, 1982.
 F. Capasso, “The channeling avalanche photodiode: A novel ultra low noise interdigitated p-n junction detector,” IEEE Trans. Electron Devices, vol. ED-29, pp. 1388-1395, 1982.
 G. F. William, F. Capasso, and W. T. Tsang, “The graded bandgap multiplayer avalanche photodiode: A new low noise detector,” IEEE Electron Devices Lett., vol. EDL-3, pp. 71-73, 1982.
 J. W. Hong, W. L. Laih, Y. W. Chen, Y. K. Fang, C. Y. Chang and J. Gong, "Optical and noise characteristics of amorphous Si/SiC superlattice reach-through avalanche photodiode," IEEE Trans. Electron Devices, vol. ED-37, no.8, pp.1804-1809, 1990.
 G. E. Stillman, V. M. Robbins, and N. Tabatabaie, “III-V compound semi-conductor devices: optical detectors,” IEEE trans. Electron Devices, vol. ED-31, pp. 1643-1655, 1984.
 R. Chin, N. Holonyak, G. E. Stillman, J.Y. Tang, and K. Hess, “Impact ionization in multilayered heterojunction structures,” Electron. Lett., vol. 16, pp. 467-469, 1980.
 Y. Okayasu, K. Fukui, and M. Matsumura, “Observation of valance-band discontinuity of hydrogenerated-amorphous Si/SiC heterojunction by photocurrent-voltage measurements ” Appl. Phys. Lett., vol. 50, pp. 248-249, 1987.
 D. Kruangam, T. Endo, M. Deguchi, W. Guang-Pu, H. Okamoto, and Y. Hamakawa "Amorphous silicon-carbide thin-film light emittingdDiode", Optoelectronics Devices and Technologies, Vol. 1, No. 1, p. 67-84, 1986.
 Rong-Hwei Yeh, "Green-blue porous silicon light-emitting diode", Master thesis, Institute of Electrical Engineering, National Central University, Chung-Li, Taiwan, Republic of China, 1996.
 Yung-Hung Wu, "Optoelectronic characteristics of a-SiC:H-based p-i-n thin-film LEDs having a thin Mo buffer layer in contact with p-a-Si:H", Master thesis, Institute of Electrical Engineering, National Central University, Chung-Li, Taiwan, Republic of China, 1996.
 K. Tanaka, Glow-discharge Hydrogenated Amorphous Silicon, Chap. 3, KTK Scientific Publishers, 1989.
 J. N. Hollenhorst, "A theory of multiplication noise," IEEE Trans. Electron Devices. vol. 37, pp. 781-788, 1990.