參考文獻 |
Book:
[1]黃凡修, “10Gb/s 光纖通訊系統傳送/接收電路模擬與實作,” 國立中央大學電機工程研究所碩士論文, 2003
[2]林愷, “光纖通訊系統,”全華科技圖書股份有限公司
[3]Behzad Razavi, “Design of Integrated Circuits for Optical
Communication“, McGRAW Hill, 2003
[4]Carlos Roberto Calvo, “A 2.5 GHz Optoelectronic Amplifier in 0.18 μm CMOS“,Worcester Polytechnic Institute in partial fulfillment of the requirements for the Degree of Master of Science in Electrical Engineering,2003
Transimpedance Amplifier
[5]Rui Tao,Manfred Berroth “A 10 Gb/s Fully Differential CMOS Transimpedance Preamplifier”,IEEE 2003
[6]Norman Scheinberg, Robert J. Bayruns, Timothy M. Laverick, “Monolithic GaAs Transimpedance Amplifiers for Fiber-Optic Receivers”, IEEE JSSC, vol.26 NO.12, pp.1834~1839, Dec. 1991
[7]M. Kossel, C. Menolfi, T Morf, M. Schmatz and T. Toift,“Wideband CMOS transimpedance amplifier”, ELECTRONICS LETTERS Vol. 39 No. 7 3rd April
[8]Alexander Schild, Hans Martin Rein, Jens Müllrich, Lars Altenhain, Jürgen Blank and Karl SchrÖdinger, “High Gain SiGe Transimpedance Amplifier Array for a 12?10Gb/s Parallel Optical Fiber Link”, IEEE JSSC, vol.38 NO.1, pp.4~12, Jan. 2003
[9]Samadi B, M.R.; Karsilayan, A.I.; Silva-Martinez, J., “Design of transimpedance and limiting amplifiers for 10 Gb/s optical communication systems”,IEEE ,Volume: 3 ,4-7 Aug. 2002
[10]Hisao Shigematsu, Masaru Sato, Toshihide Suzuki, Tsuyoshi Takahashi, Kenji Imanishi, Naoki Hara, Hiroaki Ohnishi, and Yuu Watanabe, “A 49-GHz Preamplifier With a Transimpedance Gain of 52 dB Using InP HEMTs”, IEEE JSSC, vol.36 NO.9, pp.1309~1313, Sep.2001
Limiting Amplifier
[11]Wolfgang PÖhlmann, “A Silicon Bipolar Amplifier for 10Gb/s with 45dB Gain”, IEEE JSSC, vol.29 NO.5, pp.551~556, May 1994
[12]L.C.N.de Vreede, A. C. Dambrine,J.L.Tauritz,and R.G.F. Baets, “A
high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz”,IEEE Transactions on,Volume:42, Issue:4 , April 1994
[13]G. Georgiou, P. Paschke, R. Kopf, R. Hamm, R. Ryan, A. Tate, J. Burn, C. Schulien and Y. K. Chen, “High Gain Limiting Amplifier for 10Gbps Lightwave Receivers”, 11th International Conference on Indium Phosphide and Related Materials, pp.71~74, May 1999
[14]Rui Tao,Manfred Berroth “10 Gb/s CMOS Limiting Amplifier for Optical Links”,IEEE 2003
[15]Yuriy M. Greshishchev, Peter Schvan, “A 60dB Gain, 55dB Dynamic Range, 10Gb/s Broad-Band SiGe HBT Limiting Amplifier”, IEEE JSSC, vol.34 NO.12, pp.1914~1920, Dec. 1999
[16]Taizou Kinoshita, Kiichi Yamashita, Minoru Maeda; “A DC-Coupled Wide Dynamic Range AGC Amplifier IC for 560-Mbit/s Optical Transmission”IEEE Journal of LIGHTWAVE TECHNOLOGY, VOL. LT-5, NO. 8,AUGUST 1987
DeMUX
[17]Zhihao Lao, Jens N. Albers, Ulrich Langmann and Erwin Schlag, “A 20Gb/s Silicon Bipolar 1:4-Demultiplexer IC”, Journal of Lightwave Technology, vol.12 NO.2, pp.320~324, Feb. 1994
[18]Alfred Felder, Michael MÖller, Josef Popp, Josef BÖck and Hans Martin Rein, “46Gb/s DEMUX, 50Gb/s MUX, and 30GHz Static Frequency Divider in Silicon Bipolar Technology”, IEEE JSSC, vol.31 NO.4, Apr. 1996
[19]Kenji Ishida, Hirotsugu Wakimoto, Kunio Yoshihara, Mitsuo Konno,Shoichi Shimizu, Yoshiaki Kitaura, Kenichi Tomita, Takashi Suzuki and Naotaka Uchitomi, “A 10Ghz 8-b Multiplexer/Demultiplexer Chip Set for the SONET STS-192 System”, IEEE JSSC, vol.26 NO.12, pp.1936~1943, Dec. 1991 |