參考文獻 |
[1] A. Zukauskas, Introduction to Solid-State Lighting, John Wiley & Sons, New York, (2002).
[2] 史光國, “半導體 發光二極體及固體照明, ” 全華科技圖書股份有限公司, (2005).
[3] S. NaKamura, T. Mukai, and M. Senoh, “High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes, “ J. Appl. Phys. vol. 76, 8180-8191(1994).
[4] 林昭穎, “發光二極體導光機構之研究, ” 中央大學光電所, (2002).
[5] 彭偉捷, “高功率LED之歐規汽車近光燈設計, ” 中央大學光電所, (2005).
[6] Daniel A. Steigerwald, Jerome C. Bhat, Dave Collins, Robert M. Fletcher, Mari Ochiai Holcomb, Michael J. Ludowise, Paul S. Martin, and Serge L. Rudaz, “Illumination with solid state lighting technology, ” IEEE J. Select. Topics Quantum Electron. 8, 310, (2002).
[7] 黃志銘, “大面積發光二極體二維發光分布之模擬與測量, ” 中央大學光電所, (2003).
[8] Lumileds Lighting, http://www.lumileds.com/
[9] V. N. Mahajan, Optical Imaging and Aberrations, PartI Ray Geometrical Optics, SPIE PRESS, Washington (1998).
[10] 黃柏誠, “大面積發光二極體導光元件之設計, ” 中央大學光電所, (2004).
[11] Bahaa E. A. Saleh, M. C. Teich, Fundamentals of photonics, John Wiley & Sons, New York, (1991).
[12] E. Fred Schubert, Light-emitting diodes, Cambrige University Press, New York, (2003).
[13] W. N. Carr and G. E. Pittman, “ONE-WATT GaAs p-n JUNCTION INFRARED SOURCE, “ Appl. Phys. Lett. 3, 173(1963).
[14] Eun-Hyun Park, Jae-Ho Kim, Tae-Kyung Yoo, Young-Se Kwon, “Bell Shaped Light Emitting Diode(BS-LED) with 45° Corner Reflector, Deep Side-Wall and Microlens, “ Proc. SPIE 4641, 19(2002).
[15] I. Schnitzer, E. Yablonovitch, C. Caneau, and T. J. Gmitter, “Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures, “ Appl. Phys. Lett. 62, 131(1993).
[16] A. Köck, E. Gornik, M. Hauser and W. Beinsting, “Strongly directional emission from AlGaAs/GaAs light-emitting diodes, “ Appl. Phys. Lett. 57, 2327(1990).
[17] A. Borbely and S. G. Johnson, “Prediction of light extraction efficiency of LEDs by ray trace simulation, “ Proc. SPIE 5187,301(2004).
[18] S. J. Lee, “Analysis of light-emitting diodes by Monte Carlo photon simulation, “ Appl. Optics 40, 1427-1437 (2001).
[19] C. C. Sun, C. Y. Lin, T. X. Lee, and T. H. Yang, “Enhancement of light extraction of GaN-based LED with introducing micro-structure array, “ Optical Engineering (Letters) 43, 1700-1701 (2004).
[20] T. X. Lee, C. Y. Lin, S. H. Ma and C. C. Sun, “Analysis of position-dependent light extraction of GaN-based LEDs, “ Optics Express 13, 4175-4179(2005).
[21] H. W. Choi, C. W. Jeon, and M. D. Dawson, “InGaN light emitting diodes of micro-ring geometry, ” Phys. Stat. Sol.(c) 0, 2185, (2003).
[22] H. W. Choi, 1, P. R. Edwards, C. Liu1, C. W. Jeon1, R. W. Martin2, I. M. Watson1, M. D. Dawson1, S. Tripathy3, and S. J. Chua3, “Sub-micron InGaN ring structures for high-efficiency LEDs, ” Phys. Stat. Sol.(c) 1, 202, (2004).
[23] H. W. Choi, and M. D. Dawson, “Enhanced areal efficiency from 370 nm AlGaN micro-ring light emitting diodes, ”Phys. Stat. Sol.(c) 2, 2854, (2005).
[24] H. W. Choi, C. W. Jeon, and M. D. Dawson, “InGaN Microring Light-Emitting Diodes, ” IEEE Photonics Technol. Lett. 16, 33, (2004).
[25] H. W. Choi and M. D. Dawson, ”High extraction efficiency InGaN micro-ring light-emitting diodes, ”Appl. Phys. Lett. 83, 4483, (2003).
[26] Breault Research Organization, http://www.bro.com/.
[27] J. W. Goodman, Introduction to Fourier Optics, Second Edition, McGraw-Hill Companies, Inc., (1996).
[28] S. J. Lee, “Study of photon extraction efficiency in InGaN light-emitting diodes depending on chip structures and chip-mount schemes, ” Optical Engineering vol. 45, 014601(2006). |