具網狀結構之紫外光發光二極體之特性研究

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：15

、訪客IP：18.216.135.115

姓名

馮輝慶(Hui-Ching Feng) 查詢紙本館藏

畢業系所

光電科學研究所碩士在職專班

論文名稱

具網狀結構之紫外光發光二極體之特性研究
(Characteristics of the near-ultraviolet light-emitting diode with meshed structure)

相關論文

★ 紫外光發光二極體製程技術與元件特性研究	★ 網狀電極應用在氮化物紫外光光偵測器之研究
★ 不同電流阻障層對氮化鎵發光二極體之光電特性研究	★ 氧化鋅鎵之透明導電薄膜材料特性與其應用在氮化鎵發光二極體上之研究
★ 以有機金屬化學氣相沉積法成長氮化物藍光發光二極體與其光電特性研究	★ 氮化鎵薄膜成長於奈米級圖樣化氮化鎵基板之研究
★ 氧化鋅鋁透明導電薄膜的熱穩定性於氮化鎵藍色發光二極體之研究	★ 氮化物藍光發光二極體及太陽能電池之光電特性研究
★ 具有倒金字塔側壁之氮化鎵發光二極體的製作	★ 應用氮化鎵奈米柱基板提升氮化鎵發光二極體之電流擴散
★ 圖案化二氧化矽奈米柱結構應用於氮化鎵發光二極體之研究	★ 利用陽極氧化法製備奈米結構圖案化藍寶石基板之研究
★ 二氧化矽奈米柱結構應用於氮化銦鎵太陽能電池元件之研究	★ 以氫化物氣相磊晶法成長氮化鎵厚膜於氮化鎵奈米柱之研究

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

[檢視]

[下載]

本電子論文使用權限為同意立即開放。
已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。
請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。

摘要(中)

本論文最主要是探討網狀結構應用於紫外光發光二極體（Light Emitting Diode, LED）的透明導電層、p-GaN層與MQW層之研究，分析每種結構的光電特性，希望提升LED元件的外部量子效率。
第一部份是以平面式ITO透明導電層（Planar ITO）當作基礎，嘗試利用具網狀ITO透明導電層（Meshed ITO）的架構來增加LED元件的外部量子效率，結果發現元件外部量子效率增加了2.5%，光的輸出功率也改善了19.6%，電功率也提升了2.1%，其原因有二，第一是因為Meshed ITO移除掉部分的ITO減少對光的吸收，第二是因為Meshed ITO的幾何形狀破壞了出射光的反射路徑，因而有更多的光可以被萃取出來。
在第二部份實驗，按第一部份相同的原因與理論，我們進ㄧ歩的製作出網狀p-GaN（Meshed p-GaN）結構的元件，希望得到更好的結果，比較起Planar ITO的元件，果然Meshed p-GaN的元件的外部量子效率增加了5%，光的輸出功率也改善了40.5%，電功率也提升了4.4%。
最後我們更製作出網狀的多重量子井結構（Meshed MQW）的元件，比較起Planar ITO的元件，Meshed MQW的元件的外部量子效率增加了6.3%，光的輸出功率也改善了49.8%，電功率也提升了5.5%。我們發現Meshed MQW元件的效率比Meshed ITO好，其原因是Meshed MQW破壞了光在MQW的駐波模式，使得更多的光能被萃取出來。

摘要(英)

The purpose of this study was to increase the External Quantum Efficiency(E.Q.E.) of LED by applying meshed structure on Transparent Conduct Layer(TCL)、p-GaN layer and M.Q.W. Layer.
In the begging, We fabricated the planar ITO LED then meshed ITO LED. The comparison showed that meshed ITO LED improved 2.5% on E.Q.E.、19.6% on light output power and 2.1% on power efficiency. Analysis showed the reasons were the removed ITO reduces the absorption of light and the meshed structure reduces the reflection light.
Secondly, due to the same reasons, we fabricated the meshed p-GaN LED. Compare with planar ITO LED and meshed p-GaN LED, the meshed p-GaN LED improved 5% on E.Q.E.、40.5% on light output power and 4.4% on power efficiency.
Finally, We compared again with planar ITO LED and meshed MQW LED. The result showed the meshed MQW LED improved 6.3% on E.Q.E.、49.8% on light output power and 5.5% on power efficiency. However, the reason for the improvement is the meshed MQW obstructed the formation of the standing wave in MQW layer.

關鍵字(中)

★ 氮化鎵
★ 發光二極體
★ 網狀

關鍵字(英)

★ LED
★ GaN
★ mesh

論文目次

摘要 I
Abstract II
誌謝 III
目錄 IV
圖目錄 VI
表目錄 IX
一、緒論 1
二、發光二極體基本原理介紹 3
2-1 發光二極體之發光原理 3
2-2 發光二極體光取出原理 5
2-2-1 幅射發光效率（radiant efficiency） 5
2-2-2 內部量子效率（internal quantum efficiency） 5
2-2-3 外部量子效率（external quantum efficiency） 6
2-2-4 取出效率(extraction efficiency) 6
三、研究動機與元件製作 9
3-1 研究動機 9
3-2 元件製作 9
3-2-1 透明導電層製作 10
3-2-2 n型與p型氮化鎵歐姆接觸製作 10
3-2-3 平面式ITO透明導電層紫外光發光二極體（Planar ITO LED）與具網狀ITO透明導電層紫外光發光二極體（Meshed ITO LED）元件製作 11
3-2-4 具網狀p型氮化鎵紫外光發光二極體（Meshed p-GaN LED）元件製作 17
3-2-5 具網狀多重量子井紫外光發光二極體（Meshed MQW LED）元件製作 20
四、結果與討論 23
4-1 具網狀ITO透明導電層紫外光發光二極體（Meshed ITO LED）光電特性分析 23
4-2 具網狀p型氮化鎵紫外光發光二極體（Meshed p-GaN LED）光電特性分析 25
4-3 具網狀多重量子井紫外光發光二極體（Meshed MQW LED）光電特性分析 27
5-1 結論 30
5-1-1 在電流對電壓的特性曲線方面 30
5-1-2 在電流對輸出光功率方面 30
5-1-3 在外部量子效率及電功率方面 31
5-2 未來工作 31
參考文獻 53

參考文獻

[1]N.F.Gardner, H.C.Chui “1.4× efficiency improvement in transparent-substrate (AlxGa1 – x)0.5In0.5P light-emitting diodes with thin ( 2000 Å) active regions”,APL.Phys.Lett.74, April 12, 1999.
[2]Dae-Seob Han,Ja-Yeon Kim, “Improvement of light Extraction Efficiency of Flip-Chip Light-Emitting Diode by Textureing the Bottom Side Surface of Sapphire Substrate”, IEEE Photonics Technology Letters,VOL.13,JULY 1,2006.
[3]Hung-Wen Huang , C.C.Kao , “Improvement of InGaN-GaN Light-Emitting Diode Performance With a NaNo-Roughened p-GaN Surface”, IEEE Photonics Technology Letters,VOL.17,NO.5,MAY 2005.
[4]S. J. Chang, C. F. Shen, “Highly Reliable Nitride-Based LEDs With Internal ESD Protection Diodes”, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 6, NO. 3, SEPTEMBER 2006
[5]H Kim, SJ Park,“ Design and fabrication of highly efficient GaN-based light-emitting diodes”, IEEE Transactions.Volume 49,Issue 10 October 2002.
[6]T.K.Ko,S.J Chang, “Nitride-Based Flip-Chip p-i-n Photodiodes”, IEEE Tran. Adv. Packaging, Vol. 29, No. 3, pp. 483-487, August 2006.
[7]C.H.Chen,S.J.Chang,“Nitride-Based Cascade Near White Light - Emitting Diodes”, IEEE Photonics Technology Letters, vol. 14, no. 7, pp. 908-910, July 2002.
[8]Daniel A. Steigerwald, Jerome C. Bhat, “ Illumination With Solid State Lighting Technology”, IEEE JOURNAL ON SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 8, NO. 2, MARCH/APRIL 2002
[9]Y. C. Lin, S. J. Chang ,“ InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts ”, Solid-State Electronics ,Volume 47, Issue 5, May 2003, Pages 849-853
[10]Chia-Feng Lin, Zhong-Jie Yang, ,“ Enhanced Light Output in Nitride -BasedLight-Emitting Diodes by Roughening the Mesa Sidewall”, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 10, OCTOBER 2005.
[11]S.J Chang,C.S.Chang, “Nitride-Based Flip-Chip ITO LEDs”, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 28, NO. 2, MAY 2005.
[12]Dong-Ho Kim,Chi-O Cho, “Enhanced light extraction from GaN-based light-emitting diodeswith holographically generated two-dimensional photonic crystal patterns”,APPLIED PHYSICS LETTERS 87.203508(2005).
[13]D. S. Wuu, W. K. Wang, “ Enhanced Output Power of Near- Ultraviolet InGaN– GaN LEDs Grown on Patterned Sapphire Substrates”, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 2, FEBRUARY 2005.
[14]Shui-Hsiang Su, Cheng-Chieh Hou, “ InGaN/GaN light emitting diodes with Ni/Au mesh p-contacts”, Solid-State Electronics 49 (2005) 1905–1908.
[16]Shyi-Ming Pan, Ru-Chin Tu , “ Improvement of InGaN–GaN Light-EmittingDiodes With Surface-Textured Indium–Tin–Oxide Transparent Ohmic Contacts”, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 15, NO. 5, MAY 2003.
[17]Chul Huh, Ji-Myon Lee, “Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer”, Journal of Applied Physics - September 1, 2002 - Volume 92, Issue 5, pp. 2248-2250.
[18]Motokazu YAMADA, Tomotsugu MITANI, “ InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode”, Jpn. J. Appl. Phys. Vol. 41 (2002) pp. L 1431–L 1433 Part 2, No. 12B, 15 December 2002.
[19]Lung-Chien Chen, Hui-Ching Feng, “ Improved performance of InGaN/GaN blue light-emitting diodes with a SiO2/TiO2 Bragg reflector”, phys. stat. sol. (a) 202, No. 14, 2836–2839 (2005) / DOI 10.1002/pssa.2005 20091.
[20]劉如熹，王健源白光發光二極體製作技術，初版，全華，台北，民國九十年。
[21]E.Fred Schubert，Light-Emitting Diodes
[22]史光國，半導體發光二極體及固態照明，初版，全華，台北，民國九十四年。
[23]T.Fujii,Y.Gao,“Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening”, Applied Physics Letters,VOL. 84,No.6,9 February 2004.
[24]Hyunson Kim,Ji-Myon Lee, “Modeling of a GaN-basedlight-emitting diode for uniform current spreading”,Appl.Phys.Lett,VOL. 77,No.12,18 September 2000.
[25]Z.X.Qin,Z.Z.Chen, “The role of Ni and Au transparent flim of blue LEDs”,Solid-State Electronics ,Volume 47 Issue 10.October 2003.
[26]Jae-Hong Lim, Eun-Jung Yang, “Highly transparent and low resistance gallium-doped indium oxide contact to p-type GaN”, APPLIED PHYSICS LETTERS 87, 042109.2005.
[27]C.H. Kuo , S.J. Chang,“ Nitride-based near-ultraviolet LEDs with an ITO transparent contact”, Materials Science and Engineering: B, Volume 106, Number 1, 15 January 2004 , pp. 69-72(4).
[28]June-O Song, Dong-Seok Leem,“ Improvement of the Luminous Intensity of Light-Emitting Diodes by Using Highly Transparent Ag–Indium Tin Oxide p-Type Ohmic Contacts”, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 2, FEBRUARY 2005.
[29]黃宏基，「P-型氮化鎵歐姆接觸製作研究」，國立中央大學，碩士論文，民國九十年。
[30] D. W. Kim, C. H. Jeong,“ A study of GaN etching characteristics using HBr-based inductively coupled plasmas”, Solid-State Electronics, Volume 47, Issue 3, March 2003, Pages 549-552.
[31] C. H. Kuo, C. M. Chen,“ Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers”, APPLIED PHYSICS LETTERS ,89, 201104. 2006.

指導教授

郭政煌(Cheng-Huang Kuo)

審核日期

2007-7-11

推文