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姓名 邱祥恩(Hsiang-En Chiu) 查詢紙本館藏 畢業系所 化學工程與材料工程學系 論文名稱 金矽及金錫晶圓鍵合技術應用在發光二極體
(Study of Au-Si and Au-Sn Wafer Bonding Technology for Thin-GaN LED)相關論文 檔案 [Endnote RIS 格式]
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摘要(中) 摘要
在逐漸講求環保的現代，人類開始追求節省能源與無污染的照明設備，發光二極體(LED)具備以上的優點並且即將取代過去傳統的燈泡，但是發光二極體(LED)的發光效率是否良好，其中一個影響因素就是熱，熱會使發光二極體的效率降低，所以散熱的好壞會影發光二極體(LED)的發光效率，因此如何將發光二極體(LED)貼附在散熱良好的基板上，以增加其散熱的效率，是目前我們積極研究的方向。
目前應用在晶圓鍵合(Wafer bonding)上的金屬材料眾多，例如:金、錫、矽、銅等，本研究的重點著重於金與矽在共金點形成金矽合金，利用此特性應用於發光二極體(LED)與矽基材的貼合。金矽介面是採用(100)面與(111)面的矽晶圓，在其表面蒸鍍一層金層並且在不同溫度與時間下加熱，我們發現金與矽介面之間的反應會與矽晶圓晶體的排列方向有重要關聯性。摘要(英) Abstract:
Recently, people are seeking the lighting source which consumes less energy and has no pollution. Light Emitting Diode (LED) has the advantages over the traditional lamps in the future. One issue of the high-power of LED is the heating generation in the active layer. The heating generation will decay the lighting performance. Therefore, the thermal dissipation controls the development of HB LED and the goal of our investigation is to increase the efficiency of the thermal dissipation.
There are many materials used for wafer bonding presently, for example, Au, Sn, Si, and Cu and so on. In this study, we focus on the mechanism of Au-Si formation and we use the Au-Si alloy to bond the GaN LED wafers with Si substrates. There were two kinds of Si wafers (100) and (111) used for Au-Si wafer bonding. We deposited the Au layer on the wafers and annealed in the various temperatures and times. We found that the crystallography of Si wafers would affect the Au-Si inter-reaction.關鍵字(中) ★ 晶圓鍵合
★ 金矽反應關鍵字(英) ★ wafer bonding
★ AuSi reaction論文目次 中文摘要………………………………………………………………ⅰ
英文摘要………………………………………………………………ⅱ
致謝……………………………………………………………………ⅲ
目錄……………………………………………………………………ⅳ
圖目錄…………………………………………………………………ⅵ
表目錄…………………………………………………………………ⅷ
第一章 序論……………………………………………………………1
第二章 文獻回顧………………………………………………………3
2.1 晶圓鍵合……………………………………………………...3
2.1.1鈀銦鍵合……………………………………………….3
2.1.2金矽鍵合……………………………………………….4
2.2 矽的平衡形狀……………………………………………….10
2.2.1矽的表面能...................................................................10
2.3 應力的計算………………………………………………….12
2.3.1 晶圓鍵合後應力的計算……………………………..12
第三章 實驗方法與步驟……………………………………………..15
3.1金矽反應實驗………………………………………………..15
3.1.1實驗材料……………………………………………...15
3.1.2材料清洗……………………………………………...15
3.1.3金屬層的蒸鍍………………………………………...16
3.1.4真空退火……………………………………………...16
3.1.5金的蝕刻……………………………………………...16
3.1.6利用Optimas軟體計算溶解面積................................17
3.1.7截面分析………………………………………………17
3.2 2吋晶片在金錫鍵合後量測曲率…………………………….19
3.2.1材料的製備.....................................................................19
3.2.2晶圓鍵合.........................................................................19
3.2.3彎曲度的量測………………………………………….19
第四章 結果與討論................................................................................21
4.1 金矽鍵合與反應……………………………………………...21
4.1.1矽的晶體結構與平面原子密度……………………….21
4.1.2矽的表面凹型孔洞的形成.............................................26
4.1.3 截面圖分析……………………………………………31
4.1.4凹型孔洞的移動……………………………………….34
4.2 金錫晶圓鍵合………………………………………………...39
4.2.1應力的計算…………………………………………….39
第五章 結論........................................................................................44
參考文獻…………………………………………………………..45
附錄A 密勒指標……………………………………………………47參考文獻 1. W. S. Wong, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L.T. Romano, and N. M. Johnson, Appl. Phys. Lett. 77, 2822 (2000).
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21. King-Ning Tu, James W. Mayer, and Leonard C. Feldman, Electronic Thin Film Science, p.105-109.指導教授 劉正毓(Cheng-Yi Liu) 審核日期 2006-7-3 推文 plurk
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