博碩士論文 93521047 詳細資訊


姓名 吳家賢(Jia-Shyan Wu)  查詢紙本館藏   畢業系所 電機工程學系
論文名稱 雙閘極高電子移導率電晶體之研究及其在單晶微波積體電路之應用
(Investigation of Dual Gate pHEMT and Application on Monolithic Microwave Integrated Circuits)
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摘要(中) 摘要
隨著微波技術的日趨重要,高電子移導率電晶體(HEMT)在高頻電路所扮演的角色也越來越重要;本論文是以單閘極以及雙閘極高電子移導率電晶體特性探討為主,並將雙閘極高電子移導率電晶體應用在2.4GHz微波放大器上。
本論文第二章首先討論單閘極空乏型元件與單閘極增強型元件的直流與高頻特性,並利用Yang-Long 直流量測及Cold-FET高頻量測方法,萃取電晶體外部寄生參數,再經由矩陣轉換求得內部本質元件參數值,進而建立小訊號模型,並利用cascode的方式,預測雙閘極元件的fT以及fmax。
第三章我們討論雙閘極增強-增強型元件的直流與高頻特性,並分析為什麼雙閘極增強-增強型元件的功率表現不如單閘極增強型元件;第四章則是討論雙閘極增強-空乏型元件的直流、高頻與功率特性,並將這兩種雙閘極元件做綜合比較;在第五章則是利用這兩種雙閘極元件的特性,設計2.4GHz微波放大器;第六章歸納整篇論文結果,並做一結論。
摘要(英) ABSTRACT
The microwave technology is important day by day, and HEMT is important in High frequency circuits. This thesis contents are conferred on single gate and dual gate pHEMT device performance, we also using the dual gate pHEMT in a 2.4GHz microwave amplifier design.
In chapter two, we discussed the single gate pHEMT DC and RF performance. We used Yang-Long DC measurement and Cold-FET RF measurement to extract external parasitic parameter, and we also extracted intrinsic element parameter by matrix transform to establish small signal model. By the way, we used cascode topology to forecast the maximal power gain cut off frequency (fmax) of dual gate pHEMT.
In chapter three, we discussed DC performance and RF performance of dual gate EE-mode pHEMT. And we explained the disadvantage of EE-mode pHEMT power performance. In chapter four, we discussed DC、RF and power performance of dual gate ED-mode pHEMT. And we also compared DC、RF and power performance of EE-mode pHEMT and ED-mode pHEMT .
In chapter five, we used EE-mode pHEMT and ED-mode pHEMT to design a 2.4GHz microwave amplifier. In the final chapter, we summarized the results in this thesis.
關鍵字(中) ★ 雙閘極高電子移導率電晶體 關鍵字(英) ★ Dual-Gate pHEMT
論文目次 目錄
第一章 緒論
1-1 研究背景與動機.................................. 1
1-2 論文架構........................................ 2
第二章 增強型與空乏型高電子遷移率場效應電晶體元件特性探討
2-1 簡介 ..............................................4
2-2 增強型與空乏型元件直流與高頻特性分析............. 4
2-2-1 增強型與空乏型直流特性分析...................... 4
2-2-2 增強型與空乏型高頻特性分析...................... 14
2-3 增強型與空乏型元件小訊號模型之建立............... 16
2-3-1 源極電阻的萃取.................................. 17
2-3-2 Cold FET量測萃取外部元件參數.................... 19
2-3-3 內部本質元件的萃取.............................. 23
2-4 雙閘級電晶體之設計與應用......................... 25
第三章 雙閘極增強-增強型元件特性分析
3-1 簡介 ..............................................29
3-2 直流量測結果與分析............................... 29
3-2-1 雙閘級增強-增強型元件直流特性分析............... 29
3-3 高頻與功率量測結果與分析......................... 36
3-3-1 雙閘級增強-增強型元件高頻量測分析............... 36
3-3-2 雙閘級增強-增強型元件功率量測分析............... 42
3-4 結果與討論........................................ 45
第四章 雙閘極增強-空乏型元件特性分析
4-1 簡介 ..............................................47
4-2 直流量測結果與分析............................... 47
4-2-1 雙閘級增強-空乏型元件直流特性分析............... 47
4-3 高頻與功率量測結果與分析......................... 53
4-3-1 雙閘級增強-空乏型元件高頻量測分析............... 53
4-3-2 雙閘級增強-增強型元件功率量測分析............... 57
4-4 兩種雙閘極元件之特性分析與比較.................... 60
4-4-1 雙閘級增強-空乏型與增強-增強型直流特性分析...... 60
4-4-2 雙閘級增強-空乏型與增強-增強型高頻特性分析...... 62
4-4-3雙閘級增強-空乏型與增強-增強型元件功率特性分析... 65
第五章 2.4GHZ 微波放大器之設計
5-1 簡介 ..............................................68
5-2 電路設計………………………………………………………68
5-3 模擬結果與量測結果………………………………………71
第六章 結論
參考文獻………………………………………………………………77
參考文獻 參考文獻
[1] M. Aust, H. Wang, M. Biedenbender, R. Lai, D. C. Streit, P. H. Liu, G. S. Dow, and B. R. Allen, “A 94-GHz monolithic power amplifier using 0.1 μm gate GaAs-based HEMT MMIC production process technology,” IEEE Microwave Guided Wave Lett., vol. 5, pp. 12–14, Jan. 1995.
[2] K. Inoue, M. Nagahara. N. Ui, H. Haematsu, S. Sano and J. Fukaya, “A High Gain L-band GaAs FET Technology for 28V Operation,” 2004 IEEE MTT-S Int. Microwave Symp. Dig., vol. 1, pp. 821-824, June 2004.
[3] P. K. T Mok, and C. A. T. Salama, , “A novel high-voltage high-speed MESFET using a standard GaAs digital IC process”, IEEE Trans. Electron Devices, vol. 41, pp. 246–250, Feb. 1982.
[4] R. Thompson, V. Kaper, T. Prunty, J. R. Shealy, “Improvement of high speed blocking voltage by means of metal field plate for GaAs Schottky power rectifiers”, Power Semiconductor Devices and ICs, 1991. ISPSD '91. Proceedings of the 3rd International Symposium on, pp. 159-163, Apr. 1991.
[5] I. G. Thayne, G. U. Jensen, M. C. Holland, Y. Chen; W. Li; A. Paulsen, J. H. Davies, S. P. Beaumont, P. K. Bhattacharya, “Comparison of 80-200 nm gate length Al0.25GaAs/GaAs/(GaAs:AlAs), Al0.3Ga0.7As/In0.15GaAs/GaAs, and In0.52AlAs/In0.65GaAs/InP HEMTs” IEEE Trans. Electron Devices, vol. 42, pp. 2047–2055, Dec. 1995.
[6] H. C. Chiu; S. C. Yang, Y. J. Chan, S. H. Chen, W. S. Liu, J.I. Chyi, “The microwave power performance comparisons of AlxGa1-xAs In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) doped-channel HFETs” IEEE Trans. Electron Devices, vol. 51, pp. 156–158, Jan. 2004.
[7] A.Ezzeddine, and H.Hung, ”The High Voltage/High Power FET,”2003 IEEE MTT-S Int. Microwave Symp. Dig, vol.1,pp. 215-218,June 2003.
[8] A. Inoue, S. Goto, T. Kunii, T. Ishikawa, Y. Matsuda,”A High Efficiency, High Voltage, Balanced Cascode FET,” IEEE MTT-S Int. Microwave Symp. Dig., pp. 669-672, June 2005.
[9] T. Tanimoto, I. Ohbu, S. Tanaka, A. Kawai, M. Kudo, A. Terano, T. Nakamura, “Single-voltage-supply highly efficient E/D dual-gate pseudomorphic double-hetero HEMT’s with platinum buried gates ” IEEE Trans. Electron Devices, vol. 45, pp. 1176-1182 June 1998
[10] Sandeep.R.Bahl and Jesus A del Alamo, “ A New Drain-Current Injection Technique for the Measurement of off-state Breakdown Voltage in FET’s. ” IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 40, No 8, AUGUST 1993.
[11] Roberto Menozzi, “ Off-State Breakdown of GaAs PHEMTs: Review and New Data ” IEEE TRANSATIONS ON DEVICE AND MATERIALS RELIABOLITY, Vol.4, No 1, MARCH 2004.
[12] Mark H. Somerville, Roxann Blanchard, Student Member, IEEE, Jesus A. del Alamo, Senior Member, IEEE, K. George Duh, and P.C.Chao, “ On-state Breakdown in Power HEMT’s: Measurements and Modeling” IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 46, No. 6, June 1999.
[13] G. Dambrine et all, “A new method to determining the FET small-signal circuit” IEEE Trans. Microwave Theory Tech., Vol. 36, No 7, pp 1151 1988.
[14] L. Yang et.all, “New method to measure source and drain resistance of the GaAs MESFET Model” IEEE Electron Device Lett” Vol EDL-7, pp 75-77, 1986.
[15] W. Curtice et all, “A nonlinear GaAs FET model for uses in the design of output circuit for power amplifiers” IEEE Trans. Microwave Theory Tech. , Vol. MTT-33 No. 12, pp. 183, 1985.
[16] 王志偉“增強型異質結構高速移導率電晶體大信號模型之建立及其在微波放大器之應用”國立中央大學電機工程研究所論文,pp.41-57 民國91年。
[17] L.Lee, W.Long, S.Strahle, D.Geiger, B.Henle, H.Kunzel, E.Mittermeier, U.Erben, U.Spitzberg and E.Kohn, “Dual-gate HFET with closely spaced electrodes on InP”, Proceedings of the IEEE/Cornell Conference on advanced concepts in High Speed Semiconductor Devices and Circuits, pp. 522-531,Ithaca, New York,1995.
指導教授 詹益仁(Yi-Jen Chan) 審核日期 2006-6-23
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