 |
|
|
|
以作者查詢圖書館館藏 、以作者查詢臺灣博碩士 、以作者查詢全國書目 、勘誤回報 、線上人數：10 、訪客IP：13.59.31.138
姓名 李啟賢(Chi-Hsien Lee) 查詢紙本館藏 畢業系所 電機工程學系 論文名稱 利用覆晶技術與單石微波積體電路製作之Ka/V頻段放大器
(Design and fabrication of Ka/V-band amplifiers by flip-chip and MMIC technologies)相關論文 檔案 [Endnote RIS 格式]
[相關文章]
[文章引用]
[完整記錄]
[館藏目錄]
[檢視]
- 本電子論文使用權限為同意立即開放。
- 已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。
- 請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。
摘要(中) 本論文分別設計兩種不同技術的V頻段與Ka頻段放大器，分別為單石微波放大器(MMIC Amplifier)，與利用覆晶(Flip-Chip)技術在氧化鋁基板上製作覆晶式微波放大器(MIC Amplifier)。第一部份所設計的V頻段單石微波放大器乃利用穩懋半導體公司(WIN)0.15 um pHEMT製程技術來實現。在被動元件上的設計係採用共平面波導傳輸線(CPW)來進行電路之匹配、偏壓電路設計。二級放大器設計方法是將第二級利用負載推移(Load-Pull)的模擬對負載阻抗做匹配，使其提供最大的輸出功率(Pout)；第一級的電路匹配則採用共軛匹配(Conjugate Match)的方式，提供較大的增益(Gain)。在小訊號特性表現方面其中心頻率為62.8 GHz，S11、S22與S21分別為-2.59 dB、-16.40 dB與13.33 dB。
第二部份介紹覆晶技術在高頻電路的應用，首先，先建立覆晶凸塊模型，再利用覆晶技術製作Ka頻段放大器。在高頻電路的應用上，由於頻段愈高而波長愈短，以往的鎊線(Wire Bonding)在高頻操作時所產生寄生效應會影響整體電路的特性表現，故已不再適用。然而，先完成覆晶模型的建立，再應用於電路上，是非常重要的步驟。在Ka頻段放大器中，主動元件採用穩懋半導體公司(WIN)0.15 um pHEMT製程所提供的元件；在被動元件方面，主要是利用共平面波導傳輸線易於設計的優點並配合苯並環丁烯(BCB)，製作於氧化鋁基板上。在小訊號特性表現方面其中心頻率為38 GHz，與模擬值相差6 GHz，而主要原因可能是被動元件製程、RF pads模型和覆晶凸塊(Flip-Chip Bump)模型與實際電路特性有些微誤差所造成。小訊號參數S11、S22、S21分別為-5.56 dB、-5.87 dB、10.49 dB；在功率特性方面，其線性增益為10.59 dB而增益壓縮1 dB點之輸出功率為17.53 dBm、PAE為10.27 %。若微調RF pads模型，最後的模擬結果與量測結果就相當一致了。藉由覆晶式電路的實現，證明所製作出的被動元件與覆晶技術是可以成功地應用在高頻電路上；且於文獻中利用覆晶技術(Flip-Chip Assembly)製作放大器，在這方面的發表並不是非常廣泛，故我們所製作出來的電路與衍生出來的問題都是日後要設計高頻電路的重要依據。摘要(英) In this thesis, two different microwave amplifiers were designed by using monolithic microwave integrated circuit (MMIC) and flip-chip technology for V- and Ka-band applications, respectively.
A V-band MMIC amplifier was realized by WIN 0.15 um pHEMT process. The passive components including matching networks and bias circuits were designed and fabricated by coplanar waveguide (CPW) topology. The design method of two-stage amplifier utilized load-pull simulation to find maximal output power (Pout) for output matching network at second stage and adopted complex conjugate matching to derive sufficient gain for input matching network at first stage. The operating frequency was at 62.8 GHz with scattering parameter S11, S22 and S21 of -2.59 dB, -16.40 dB and 13.33 dB, respectively.
Secondly, a microwave integrated circuit using flip-chip technology for Ka-band is presented. In the application of the microwave circuit, the wire bonding connection could produce serious parasitic effect in high frequency. Therefore, it is important to use flip-chip bonding. At first, flip-chip bump model was developed, and then Ka-band amplifier by using flip-chip technology was designed and fabricated. The active device (0.15 um pHEMT) was fabricated by WIN semiconductor, and the passive components were mainly utilized by CPW to integrate with BCB and fabricated on the alumina substrate. The operating frequency was simulated at 38 GHz, but the measured results show a 6 GHz difference. The possible reasons may result from the variation from the passive component process, RF pads model and flip-chip bump model. The measured small signal parameters S11, S22 and S21 were -5.56 dB, -5.87 dB and 10.49 dB, respectively. In the power performance, the linear gain was 10.59 dB, output power at 1 dB compression point was 17.53 dBm and PAE was 10.27 %. If RF pads model parameters are tuned, it showed good agreement between simulation and measurement. By the realization of the presented Ka-band flip-chip assembly pHEMT circuit, it is possible that the passive components made on separate substrates and flip-chip technology could apply successfully to the high frequency circuits.關鍵字(中) ★ 單石微波積體電路
★ 放大器
★ 覆晶技術關鍵字(英) ★ amplifier
★ MMIC
★ flip-chip論文目次 目錄
頁次
第一章 導論………………………………………………… 1
1.1 微波電路之研究背景……………………………… 1
1.2 研究動機…………………………………………… 3
1.3 論文架構…………………………………………… 4
第二章 功率放大器之基本原理與設計方法……………... 5
2.1 簡介………………………………………………… 5
2.2 雙埠網路之散射參數定義………………………… 6
2.3 功率放大器設計之考量…………………………… 7
2.3.1 放大器之分類……………………………………… 7
2.3.2 放大器之穩定度分析……………………………… 10
2.3.3 阻抗匹配網路…………………………………..….. 11
2.3.4 負載線原理………………………………………… 12
2.3.5 功率放大器之考量參數…………………………… 14
第三章 V頻段單石微波積體電路之放大器設計………… 25
3.1 簡介………………………………………………… 25
3.1.1 共平面波導特性…………………………………… 26
3.2 V頻段單石微波積體電路之放大器設計...………. 30
3.2.1 電晶體介紹………………………………………… 30
3.2.2 抑制二階諧波的方法……………………………… 31
3.2.3 放大器之架構簡介………………………………… 32
3.2.4 電路設計流程……………………………………… 33
3.2.5 電路模擬結果……………………………………… 34
3.2.6 電路佈局…………………………………………… 37
3.3 電路量測結果……………………………………… 38
3.4 結果與討論………………………………………… 43
第四章 覆晶技術在高頻電路之應用………………..…... 45
4.1 簡介………………………………………………. 45
4.2 氧化鋁基板………………………………………. 45
4.3 BCB特性………………………………………… 46
4.4 覆晶凸塊製作……………………………………. 48
4.5 覆晶凸塊分析……………………………………. 54
4.5.1 覆晶凸塊直徑與高度之最佳化…………………. 55
4.5.2 覆晶凸塊之模型建立與比較……………………. 57
4.6 Ka頻段共平面波導覆晶式放大器之設計與製作 62
4.6.1 氧化鋁基板電路之設計方法……………………. 62
4.6.2 氧化鋁基板電路之模擬結果……………………. 63
4.6.3 氧化鋁基板電路之製程步驟……………………. 71
4.6.4 電路量測結果……………………………………. 77
4.7 結果與討論………………………………………. 81
第五章 結論…………………………….………………… 88
參考文獻 …………………………………………….………………….…….…… 89參考文獻 參考文獻
[1] R.F.Pierret, “Semiconductor Device Fundamentals”, Addsion Wesley,1996.
[2] Steve C. Cripps, “RF Power Amplifiers for Wireless Communication”, Artech House, Inc., 1999.
[3] Guillermo Gonozolez, “Microwave transistor amplifiers analysis and design”, Prentice-Hall, 1984.
[4] 張文華,“共平面波導帶通濾波器之研究”, 碩士論文, 國立台灣大學, 2000
[5] RAINEE N. SIMONS, “Coplanar Waveguide Circuits, Components, and Systems”, WILEY, 2002.
[6] C.Veyres and V.F.Hanna, ”Extension of the Application of Conformal Mapping Techniques to Coplanar Lines with Finite Dimension”, Int.J.Electron, Vol.48, No.1, pp.47-56, Jan.1980
[7] S.Gevorgain , L.J.P. Linner and E.L.Kollberg, ”CAD Models for Shielded Multilayered CPW”, IEEE Trans. Microwave Theory Tech, Vol43, No.4, pp.772-779. April 1995.
[8] 簡練, “共平面波導Ka 頻段低雜訊與功率放大器之研製”, 碩士論文,國立交通大學, 2000
[9] 何岳龍, “高效率與線性度的功率放大器設計”,碩士論文, 國立中央大學,2003
[10] M. A. G. Upton, K. H. Snow, D. I. Goldstick’, W. M. Kong, M-Y Kao, W.F.Kopp, Ho G. J. Tessmer, B. R. Lee, K. A. Wypych and A. A. Jabra, “Monolithic HEMT LNAS for Radar, EW, and COMM”, IEEE Microwave and Millimeter-Wave Monolithic Circuit Symposium, 1989
[11] Mikko Varonen, Mikko Kiirkkainen, Pekka Kangaslahti and Veikko Porra “Integrated Power Amplifier for 60 GHz Wireless Applications” Helsinki University of Technology, Electronic Ciriuit Design Laboratory, Espoo, P.0 BOX 3000,FnT-02015 HUT. Finlan
[12] R. E. Kasody, Member, IEEE, G. S . Dow, Member, IEEE, A. K. Sharma, SeniorMember, IEEE, M. V. Aust,D. Yamauchi, R. Lai, M. Biedenbender, Member, IEEE, K. L. Tan, and B. R. Allen, Member, IEEE,“A High efficiency V-Band Monolithic HEMT Power Amplifier”, IEEE MICROWAVE AND GUIDED WAVE LE'ITERS, VOL. 4, NO. 9, SEF'EMBER 1994
[13] JERRY JORDNA, “GOLD STUD BUMPS IN FLIP-CHIP APPLICATIONS”, 2002, IEEE International Electronics Manufacturing Technology Symposium, San Jose , CA, July 2002.
[14] F.M. De Paola , V. Aliberti, B.Rajaei, N. Rinaldi and J. N. Burghartz , “A Scalable Physical Model for Coplanar Waveguide Transition in Flip-Chip Applications “, 2004,IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONICS , VOL.1 , pp.345-348, MAY, 2004.
[15] Wolfgang Heinrich , Andrea Jentzsch , and Guido Baumann, “Millimeter-Wave Characteristics of Flip-Chip Interconnects for Multi-chip Modules”, IEEE TRANSCTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL.46, NO. 12, pp. 2264-2268,DECEMBER 1998.
[16] Y. Arai, M. Sato , H. T. Yamada, T. Hamada , K.Nagai and H.I.F, “60-GHz Flip-Chip Assembled MIC Design Considering Chip-Substrate Effect”, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL.45, NO. 12, pp.2261-2266, DECEMBER 1997.
[17] 劉佑安,“利用單石微波積體電路與覆晶技術製作之Ka頻段振盪器”, 碩士論文, 國立中央大學,2003
[18] 郭哲均,“覆晶技術應用於毫米波積體電路”, 碩士論文, 國立中央大學,2003
[19] 原著:本城和彥,編譯:呂學士,“微波通訊半導體電路”,出版社:全華科技圖書股份有限公司,2001
[20] Daniela Staiculescu , Joy Laskar , Member , IEEE, and Emmanouil, Member IEEE ,“Design Rule Development for Microwave Flip-Chip Applications”, IEEE TRANSCATIONS ON MICROWVAE AND TECHNIQUES , VOL.48,NO.9,pp. 1476-1481, SEPTEMBER 2000.
[21] Lamberto Raffaelli, Earle Stewart, John Borelli, Robert Quimby, “Millimeter Wave GaAs MMICs for Automotive Applications”, 1994 IEEE Sarnoff Symposium, pp. 28-34.指導教授 辛裕明(Yue-Ming Hsin) 審核日期 2006-7-4 推文 plurk
funp
live
udn
HD
myshare
netvibes
friend
youpush
delicious
baidu
網路書籤 Google bookmarks
del.icio.us
hemidemi
facebook
twitter
google
reddit