![]() |
|
以作者查詢圖書館館藏 、以作者查詢臺灣博碩士 、以作者查詢全國書目 、勘誤回報 、線上人數:29 、訪客IP:52.14.196.99
姓名 洪國欽(Guo-Chin Hong) 查詢紙本館藏 畢業系所 電機工程學系 論文名稱 模板式電路和二維元件模擬器之開發
(Development of Template Circuit and 2D Device Simulator)相關論文 檔案 [Endnote RIS 格式]
[Bibtex 格式]
[相關文章]
[文章引用]
[完整記錄]
[館藏目錄]
[檢視]
[下載]
- 本電子論文使用權限為同意立即開放。
- 已達開放權限電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。
- 請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。
摘要(中) 本論文是主要開發兩套模板式模擬器,第一個是模擬器叫做是模板式暫態電路模擬器,我們簡稱它為TR_CKT,它是包含許多基本的電路元件,所以使用者可以用這些電路元件來做電路相關應用。第二個模擬器是模板式暫態元件模擬器,我們簡稱它為TR_DEV2D,它的主要原理是用Poisson’’s方程式和電子電洞連續方程式去組成等效電路,所以它可以用來模擬二維半導體元件和混階之應用。我們對這兩套模擬器開發了輸入語法,使用者可以把想要模擬的電路應用,二維元件,或混階元件和電路應用寫在輸入檔去做模擬。 摘要(英) In this thesis, we develop two template simulators. First simulator is the template transient circuit simulator (TR_CKT). It includes many circuit elements. The user can use TR_CKT for circuit application. Second simulator is the template transient device simulator (TR_DEV2D). The principle of the TR_DEV2D is to formulate Poisson’s and continuity equations into the equivalent-circuit model. It can be used to simulate the semiconductor device and mixed-level application. We have developed the format of input files for the two simulators. The user can follow the input files for circuit simulation, 2D device simulation, and the mixed-level device and circuit simulation. 關鍵字(中) ★ 模板式
★ 二維元件關鍵字(英) ★ template
★ 2d device論文目次 1. Introduction....1
2. Development of Template Transient Circuit Simulator..........3
2.1 Introduction to TR_CKT........3
2.2 TR_CKT statement format........ 4
2.3 MOSFET I-V comparison between the packaged and the unpackaged versions..........6
2.4 MOSFET C-V comparison between the packaged and the unpackaged versions...........8
2.5 Circuit applications.............13
3. Development of Template Transient Device Simulator.........................23
3.1 Introduction to TR_DEV2D............23
3.2 2-D equivalent circuit model for TR_DEV2D....24
3.3 TR_DEV2D statement format............27
3.4 Comparison between the packaged and the unpackaged versions...........28
3.5 2D device applications............31
3.6 Mixed-level applications...........36
4. Conclusion..........................40
List of reference....................41參考文獻 [1] L. Nagel, “SPICE2: A computer program to simulate semiconductor circuits,” Electron. Res. Lab., Univ. California at Berkeley, Berkeley, UCB/ERL M520, 1975.
[2] MEDICI: Two-Dimensional Semiconductor Simulation Program. Palo Alto, CA: Technology Modeling ASSOCIATES, 1993.
[3] Y.-M. Sun, “Levelized Incomplete LU Factorization and Its application to Quasi-Static MOSFET C-V Simulation,” M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, Jun. 2001.
[4] G.. Massobrio, and P. Antognetti, “Semiconductor Device Modeling with SPICE,” McGraw-Hill Company, Inc.,1993.
[5] N. Weste, and K. Eshraghian, “Principles of CMOS VLSI Design,” Addison-Wesl-
ey Publishing Company, Inc, 1993.
[6] B. Razavi, “Design of Analog CMOS Integrated Circuits,” the McGraw-Hill Company, Inc., 2001.
[7] R. Jacob Baker, “CMOS Circuit Design, Layout, and Simulation,” Wiley- Intersci-
ence, Inc, 2005.
[8] C.-L. Teng, “An equivalent circuit approach to mixed-level device and circuit simulation,” M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, Jun. 1997.
[9] A. Sedra, and K. Smith, “Microelectronic Circuit,” Oxford University, Inc 2004指導教授 蔡曜聰(Yao-Tsung Tsai) 審核日期 2006-6-22 推文 plurk
funp
live
udn
HD
myshare
netvibes
friend
youpush
delicious
baidu
網路書籤 Google bookmarks
del.icio.us
hemidemi
myshare