||In this study, photonic crystals have been designed, fabricated, and characterized in GaN bulk materials. The energy dependent measurement showed that the emission peak width can be significantly reduced as the pumping pulse energy was larger than 0.7 uJ at room temperature. The mode at the wavelength of 371 nm emitted from the defect due to the structure disorder unintentionally introduced during the fabrication process of the GaN photonic crystals can be obtained. The photonic band-edge laser was realized.|
For the Si MOS (Metal-Oxide-Semiconductor) device, we have obtained a spontaneous emission peak at 1.14 um by using photoluminescence measurement. By improving the electronic and luminescent characteristics of oxide layer, the structure might be used to fabricate the electrically pumped Si MOS photonic crystal lasers.
E. Yablonovitch, “Inhibited Spontaneous Emission in Solid-State Physics and Electronics,” Phys. Rev. Lett. 58, 2059 (1987).
S. John. “Strong localization of photons in certain disordered dielectric superlattices,” Phys. Rev. Lett. 58, 2486 (1987).
E. Yablonovitch, “Photonic crystals: semiconductor of light,” Scientific American December, 47 (2001).
E. Pennisi, “Naturalist's Surveys Show That British Butterflies Are Going, Going...,” Science, 303, 1747 (2004).
 L. P. Biró, Zs. Bálint, K. Kertész, Z. Vértesy, G. I. Márk, Z. E. Horváth, J.Balázs, D. Méhn, I. Kiricsi, V. Lousse, J.-P.Vigneron, “Role of Photonic-Crystal-Type Structures in the Thermal Regulation of a Lycaenid Butterfly Sister Species Pair,” Phys. Rev. E. 67, 021907 (2003).
 Jeong-Ki Hwang, Han-Youl Ryu, Dae-Sung Song, II-Young Han, Hyun-Woo Song, Hong-Kyu Park, Yong-Hee Lee, Dong-Hoon Jang, “Room-temperature triangular-lattice two-dimensional photonic band gap lasers operating at 1.54