不同溫度下微波輻射對矽中氫離子活化效應之研究

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姓名

蔡俊璋(Chun-Chang Tsai) 查詢紙本館藏

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材料科學與工程研究所

論文名稱

不同溫度下微波輻射對矽中氫離子活化效應之研究
(The Activated Effects of Hydrogen Ions under Microwave Irradiation at Different Temperature Ambiance)

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摘要(中)

在瞬息萬變快速演進的半導體工業中，絕緣層上矽材料（SOI，Silicon-on-Insulator）以它獨特的結構解決了一般使用矽塊材製作半導體元件所發生的漏電流、過熱等關鍵問題，將半導體產業又推向了下一個世代。近年來，NanoClub發展出熱力微波製程（Thermal Microwave Process）來製作SOI材料，以能避免異質材料間之熱應力問題且比一般單使用微波加熱更具效率及轉移後薄膜品質較佳的優點為號召，期能成為現今製作SOI材料的主流製程。
本研究即進一步深入探討其熱力微波中的溫度氣氛參數，比較在不同的溫度氣氛下施以微波輻射對矽中氫離子的活化激發效應。實驗結果發現，在高於室溫的溫度氣氛下施以微波照射較能激發矽中的氫離子，使之易於生成氫氣泡；隨著溫度氣氛的提高，其表面的氫氣泡個數、尺寸大小均隨之有增加的趨勢，可證明溫度氣氛越高越能活化矽中的氫離子，使之具有更多的動能聚合形成氫氣泡；且於170℃以上的溫度氣氛下施以微波照射，能大幅的提升表面氫氣泡的數量及尺寸。

摘要(英)

In the fast-changing semiconductor industry, silicon on insulator (SOI) depending on its unique structure solves many crucial issues that devices fabricated by conventional bulk silicon processing usually have some problems such as current leakage and heat generation. Recently, NanoClub has developed a Thermal-Microwave (TM) process to make SOI materials so as to avoid the thermal stress between the two dissimilar materials and obtain higher efficiency and higher quality than pure microwave process.
In this study, the temperature parameter of the ambiance in TM process has been further discussed, which the effects of activated hydrogen ions excited by microwave irradiation in Si were compared with each other at different temperature ambiance. Hydrogen ions can be easy to be excited from Si and form hydrogen bubbles by microwave irradiation above room temperature ambiance, as indicated from experimental results. The numbers and sizes of hydrogen bubbles beneath the sample surface were increased by increasing the temperature of the ambiance. Besides, according to the above results, it could be proved that higher temperature ambiance excited more hydrogen ions in Si and then provided more kinetic energy for the coalescence of hydrogen bubbles. The numbers and sizes of the hydrogen bubbles could be greatly increased under microwave irradiation above 170℃ temperature ambiance.

關鍵字(中)

★ 熱力微波
★ 薄膜轉移
★ 絕緣層上矽材料
★ 微波加熱
★ 微波
★ 氫離子活化

關鍵字(英)

★ layer transfer
★ SOI
★ silicon on insulator
★ hydrogen ions activating
★ microwave heating
★ microwave
★ thermal microwave

論文目次

總目錄
中文摘要 I
英文摘要 II
誌謝 IV
總目錄 V
圖目錄 VII
表目錄 IX
第一章前言 1
1.1 研究背景 1
1.2 研究動機 2
第二章 SOI薄膜轉移技術及機制 4
2.1 利用Smart-CutTM法製作SOI材料 4
2.2 氫在半導體矽晶圓中之現象 6
2.3 薄膜剝離機制 9
2.3.1 薄膜剝離機制概述 9
2.3.2 微裂縫成長動力學 10
第三章微波理論 29
3.1 微波簡介 29
3.2 微波加熱原理 30
3.2.1 微波與材料間的作用 30
3.2.2 材料吸收微波的途徑 32
3.2.3 材料的介電性質 34
3.2.4 微波加熱法與傳統加熱法之比較 36
第四章實驗方法與步驟 43
4.1 實驗流程 43
4.1.1 晶圓準備及清洗 43
4.1.2 離子佈植及晶圓切割 43
4.1.3 微波活化處理 44
4.1.4 表面影像分析 45
第五章實驗結果與討論 52
5.1 不同溫度氣氛下微波輻射對矽中氫離子之活化作用 52
5.1.1 室溫氣氛下微波輻射對矽中氫離子的影響 52
5.1.2 110℃、130℃、150℃、170℃、190℃及210℃之溫度氣氛下微波輻射對矽中氫離子的影響 53
第六章結論 62
參考文獻 64

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指導教授

李天錫(Tien-Hsi Lee)

審核日期

2007-7-13

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