參考文獻 |
1. C.M. Liu, J.C. Chen, Y.C. Huang, H.L. Hsieh “The morphology of etch pits on a sapphire surface”, Journal of Physics and Chemistry of Solids, 69, P572–575, 2008.
2. H. Tan, A. Gilbertson and S. Y. Chou, “Roller nanoimprint lithograp hy”, Journal of Vacuum Science and Technology-Section B-Microel ectronics Nanometer Structure, 16, P3926, 1998.
3. J. Guo, D.E. Ellis, D.J. Lam, “First principle calculation of the electronic structure of sapphire:Bulk states”, Physical Review B, 45, P3204, 1992.
4. D.C. Harris, F. Schmid, D. R. Black, E. Savrun, H.E. Bates, “Factors that influence mechanical failure of sapphire at hightemperature,” SPIE, Vol.3060, P226-235, 1997.
5. D.C. Harris, F. Schmid, J.J. Mecholsky, Y.L. Tsai, “Mechanism of MechanicalFailure of Sapphire at High Temperature”, SPIE, Vol.2286, P16-25, 1994.
6. 劉國雄, 林樹均, 李勝隆, 鄭晃忠, 葉均為, 工程材料科學, P44, ISBN 957-21-0830-1, 1996.
7. 呂中偉,「以熱交換器法生長氧化鋁單晶之模擬分析」,國立中央大學機械工程研究所,博士論文,民國91年7月.
8. CW Mueller, PH. Robinson, “Mueller CW, Robinson PH., Proc IEEE, 52, P1487, 1964.”, Proc IEEE, 52, P1487, 1964.
9. M.S. Akselrod, F.J. Bruni, “Modern trends in crystal growth and new applications of sapphire”, Journal of Crystal Growth, 2012.
10. W. Zulehner, “Czochralski Growth of silicon”, Journal of Crystal Growth, 65, P189, 1983.
11. H.J. Scheel, “Historical aspects of crystal growth technology”, Journal of Crystal Growth, 211, P1-12, 2000.
12. H.E. LaBelle, Mater. Res. Bull., 6, P581, 1971.
13. H.J. Scheel, T. Fukuda, “The Development of Crystal Growth Technology ” ,Crystal Growth Technology, P3-14, 2003.
14. C.W. Lu, J.C. Chen, “Numerical computation of sapphire crystal growth using heat exchanger method”, J. Cryst. Growth, 225, P274, 2001.
15. J.C. Chen, C.W. Lu, “Influence of the crucible geometry on the shape of the melt– crystal interface during growth of sapphire crystal using a heat exchanger method”, J. Cryst. Growth, 266, P239, 2004.
16. C.W. Lu, J.C. Chen, “A numerical investigation of the thermal distribution effects in a heat-exchanger-method crystal growth system”, Model. Simul. Mater. Sci. Eng. 10, P147, 2002.
17. M.H. Tavakoli and H. Wilke, “Numerical study of induction heating and heat transfer in a real Czochralski system”, J. Cryst. Growth, P85, 2005.
18. M.H. Tavakoli and H. Wilke, “Numerical study of heat transport and fluid flow of melt and as during the seeding process of sapphire Czochralski crystal growth”, Cryst. Growth Des., 7, P644, 2007.
19. M.H. Tavakoli, H. Wilke, “Numerical study of heat transport and fluid flow during different stages of sapphire Czochralski crystal growth”, J. Cryst. Growth, 310, P3107, 2008.
20. 陳建宏,「柴式法生長氧化鋁單晶過程最佳化熱流場之分析」,國立中央大學,碩士論文,民國97年。
21. C.W. Lu, J.C. Chen, C.H. Chen, C.H. Chen, W.H. Hsu, C.M. Liu, “Effects of RF coil position on the transport processes during the stages of sapphire Czochralski crystal growth”, J. Cryst. Growth, 312, P1074, 2010.
22. C.W. Lu, J.C. Chen, “Numerical simulation of thermal and mass transport during Czochralski crystal growth of sapphire”, Cryst. Res. Technol., 45, P371, 2010.
23. Kyropoulos S 1926Z. Anorg. Chem.154308
24. E.R. Dobrovinskaya, L.A. Lytvynov, V. Pishchik, Sapphire: Materials, Manufacturing, Applications., Springer, P3, 2009.
25. M.I. Musatov, Heat-Resistant Dielectrics. Atomizdat, Moscow., PP117 – 118, Russian, 1980.
26. M.I .Musatov, Book of Lectures of 1st International. School on Crystal Growth Technolog, Switzerland., P624, 1998.
27. 李宏凱,「利用Kyropoulos方法生長藍寶石單品之研究」,中華技術學院,碩士論文,民國95年。
28. 侯帝光,「製程參數對藍寶石單晶品質之研究」,中華技術學院,碩士論文,民國98年。
29. 許承海,孟松鹤,韓杰才,左洪波,張明福,汪桂根,G. Benik,「散熱參數對冷心放肩微量提拉法生長藍寶石晶體影響的數值模擬」,矽酸鹽通報,第25卷第6期,56-61頁,2006年。
30. 姚泰, 左洪波, 孟松鹤, 韓杰才, 張明福, 李常青, 許承海, 「SAPMAC法生長大尺寸藍寶石單晶工藝研究」, 哈爾濱工業大學學報, 第19卷第5期, 2007。
31. 許承海, 杜善義, 孟松鹤, 韓杰才, 汪桂根, 左洪波, 張明福, 「藍寶石晶體熱性能的各向異性對SAPMAC法晶體生長的影響」, 哈爾濱工業大學學報, 第36卷第6期, 2007。
32. 許承海, 張明福, 孟松鹤, 左洪波, 韓杰才, 「藍寶石熱物性能對SAPMAC法晶體生長影響的模擬分析」, 稀有金屬材料與工程, 第36卷增刊2, 2007。
33. 許承海, 杜善義, 張明福, 孟松鶴, 左洪波, 譚舒平, G. Benik, 「加熱功率波動對SAPMAC法晶體生長的影響」, 人工晶體學報, 第36卷第2期, 2007。
34. G.G. Wang, M.F. Zhang, H.B. Zuo, C.H. Xu, H.E. Xiao, J.C. Han, “Dislocation analysis for large-sized sapphire single crystal grown by SAPMAC method”, Chinese Journal of Structural Chemistry 26, P1332, 2007.
35. S.E. Demina, E.N. Bystrova, V.S. Postolov, E.V. Eskov, M.V. Nikolenko, D.A. Marshanin, V.S. Yuferev, V.V. Kalaev, “Numerical analysis of sapphire crystal growth by the Kyropoulos technique”, Opt. Mater. 30, P62, 2007.
36. S.E. Demina, E.N. Bystrova, M.A. Lukanina, V.M. Mamedov, V.S. Yuferev, E.V. Eskov, M.V. Nikolenko, V.S. Postolov, V.V. Kalaev, “Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method”, J. Cryst. Growth 310, P1443, 2008.
37. S.E. Demina, V.V. Kalaev, “3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth”, J. Cryst. Growth 320, P23–27, 2011.
38. W.J. Lee, Y.C.Lee, H.H.Jo, Y.H.Park, “Effect of crucible geometry on melt convection and interface shape during Kyropoulos growth of sapphire single crystal”, J. Cryst. Growth 324, P248–254, 2011.
39. M.S. Akselrod, F. J. Bruni, “Modern trends in crystal growth and new applications of sapphire”, J. Cryst. Growth, In Press, Corrected Proof, 2012.
40. M.I. Musatov, in: Book of Lectures at the 1st International Workshop on Crystal Growth Technology, Switzerland, 1998.
41. T. Tsukada, K. Kakinoki, M. Hozawa, N. Imaishi, K. Shimamura, T. Fukuda, “Numerical and experimental studies on crack formation in LiNb03 single crystal”, J. Crystal Growth 180, P543, 1997.
42. N. Miyazaki, H. Uchida, T. Tsukada, T. Fukuda, “Quantitative assessment for cracking in oxide bulk single crystals during Czochralski growth: development of a computer program for thermal stress analysis”, J. Crystal Growth 162, P83, 1996.
43. M. Kobayashi, T. Tsukada, M. Hozawa, 2002, Effect of internal radiation on thermal stress fields in CZ oxide crystals, J. Cryst. Growth 241, P241, 2002.
44. M.F. Modest, Radiative Heat Transfer, Academic Press, Amsterdam , Boston, p. 257, 2003.
45. H. Henry, A.A. Stavros, “Mathematical modeling of solidification and melting: A review,” Modelling Simul. Mater. Sci. Eng., Vol.4, pp.371-394, 1996.
46. Brewster, MQ, Thermal Radiative Transfer and Properties, pp. 502-510. John Wiley & Sons, New York. 1992.
47. D. Vizman, I. Nicoara, G. Muller, “Effects of temperature asymmetry and tilting in the vertical Bridgman growth of semi-transparent crystals”, J. Cryst. Growth 212, P334, 2000.
48. C.H. Xu, M.F. Zhang, S.H. Meng, J.C. Han, G.G. Wang, H.B. Zuo, “Temperature field design, process analysis and control of SAPMAC method for the growth of large size sapphire crystals”, Cryst. Res. Technol. 42, P751, 2007.
49. A.E. Kokh, V.A. Vlezko, and K.A. Kokh, “Control over the Symmetry of the Heat Field in the Station for Growing LBO Crystals by the Kyropoulos Method”, Instruments and Experimental Techniques 52, P747, 2009.
50. http://thermaltechnology.com/pdf/TTL_Model_K1_Sapphire_Grower.pdf51.
51. J.F. Nye, Physical properties of crystals : their representation by tensors and matrices, 1957.
52. T.M. Regan, D.C. Harris, D.W. Blodgettd, K.C. Baldwin, J.A. Miragliotta, M.E. Thomas, M.J. Linevsky, J.W. Giles, T.A. Kennedy, Mohammad Fatemi, David R Blackf, K.Peter D Lagerlofg, “Neutron irradiation of sapphire for compressive strengthening. II. Physical properties changes”, Journal of Nuclear Materials, Volume 300, Issue 1, P47–56, 2002.
53. W. M. Yim, R. J. Paff, “Thermal expansion of AlN, sapphire, and silicon”, J. Appl. Phys. 45, 1456, 1974.
54. D.C. Harris, Materials for Infrared Windows and Domes: Properties and Performance, SPIE press, 1999.
55. Y.Q. Long, S. Cen, Z.F. Long, Advanced finite element method in structural engineering, Beijing Tsinghua Univ. Press Berlin Heidelberg New York, NY Springer, 2009.
56. COMSOL 3.5a, Multiphysics User’s Guide.
57. T. Vodenitcharova, L.C. Zhang, I. Zarudi, Y. Yin, H. Domyo, T. Ho, M. Sato, “The effect of anisotropy on the deformation and fracture of sapphire wafers subjected to thermal shocks”, Journal of Materials Processing Technology 194 52–62, 2007.
|