博碩士論文 945201051 詳細資訊

姓名 王俊凱(Chun-Kai Wang)  查詢紙本館藏   畢業系所 電機工程學系
論文名稱 高速、高功率串接式可見光發光二極體
(Linear Cascade Arrays of GaN Based Green Light Emitting Diodes for High-Speed and High-Power Performance)
檔案 [Endnote RIS 格式]    [Bibtex 格式]    [檢視]  [下載]
  1. 本電子論文使用權限為同意立即開放。
  2. 已達開放權限電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。
  3. 請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。

摘要(中) 在本論文中,我們成功展示出在520nm波段,利用串接的方式來改善大型化後發光二極體的輸出功率以及外部量子效率。我們將串聯的數目從一顆提升到四顆,在相同操作電流下,輸出功率和單顆發光二極體比較確實可以達到四倍的改善。之後,我們進行串接式發光二極體在調變速度上的表現,在相同操作電流下,四顆和單顆有相似的3-dB頻寬約90MHz。
摘要(英) We demonstrate a linear cascade GaN based Light Emitting Diode (LED) arrays at a wavelength around ~520nm for improving the output power and differential efficiency of a single LED. Arrays with up to four LEDs connected in series, we can achieve four times improvement of output power under the same bias current (differential quantum efficiency) compared with the control, which is a single LED.
We have also measured their modulation-speed performance and both devices show similar 3-dB bandwidth (90MHz) under the same bias currents. The measurement results indicate that the cascade connection has the advantages of greatly enhanced external differential efficiency and the ability to be driven by the constant-voltage power supply directly. The current crowding problem and degradation of RC-limited bandwidth in large active area LED can also be minimized through the use of such connection.
關鍵字(中) ★ 串接式
★ 氮化鎵
★ 發光二極體
關鍵字(英) ★ Cascade
★ GaN
★ Light-emitting-Diode
論文目次 摘要 i
Abstract ii
致謝 iii
目錄 v
圖表目錄 vii
第一章 導論 1
§1-1 發光二極體之簡介 1
§1-2 發光二極體在車上的應用 3
§1-3 塑膠光纖之發展趨勢與其應用 5
§1-4 塑膠光纖損耗及光源 9
§1-5 研究動機和論文架構 11
第二章 串接式氮化鎵發光二極體之分析 12
§2-1 氮化鎵發光二極體電流壅塞效應 12
§2-2 發光二極體調制速度之限制 16
§2-3 發光二極體對於車用特殊電壓所面臨問題 17
§2-4 串接式發光二極體 18
第三章 串接式氮化鎵發光二極體元件結構及製程 19
§3-1串接式氮化鎵發光二極體元件結構 19
§3-2串接式氮化鎵發光二極體製作流程 20
第四章 串接式氮化鎵發光二極體量測結果與討論 27
§4-1.串接式氮化鎵發光二極體之電特性量測 27
§4-2.串接式氮化鎵發光二極體之光特性量測 28
§4-3.串接式氮化鎵發光二極體調變速度之量測 32
第五章 結論 35
參考文獻 36
參考文獻 [1] Kevin Linthicum, Thomas Gehrke, Darren Thomson, Eric Carlson, Pradeep
Rajagopal, Tim Smith, Dale Batchelor, and Robert Davis, Appl. Phys. Lett.75
[2] T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 84, 855(2004)
[3] Chul Huh, Kug-Seung Lee, Eun-Jeong Kang, and Seong-Ju Park, J. Appl. Phys. 93, 9383(2003)
[4] J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, Y-C, Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Gotz, N. F. Garder, R. S. Kern, and S. A. Stockman, Appl. Phys. Lett. 78, 3379(2001)
[5] M. Koike, N. Koide, S. Asami, J. Umezaki, S. Nagai, S.Yamasaki, N. Shibata, H. Amano, and I. Akasaki, in Proc. SPIE International Society for Optical Engineering, vol.3002, pp.36-39(1997)
[6] Sung-Pyo Jung, Chien-Hung Lin, Hon Man Chan, Zhiyong Fan, J. Grace Lu,
and Henry P. Lee, phys. stat. sol. (a)201, no.12, 2827-2830(2004)
[7] D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, IEEE Photon. Technol. Lett. , vol. 17, no. 2, Feb. 2005
[8] LEDs in Automotive Lighting, Proc.of SPIE Vol.6134 613405-1
[9] Steele, Robert “High bandwidths for plastic optical fiber”, Laser Focus World,pp.32-34,January 1995.
[10] H.Schopp:”Principles and Applications of the MOST Network” , Meeting of the ITG-Fokusprojektes ITF , Fraukfurt, May11,2001.
[11] Club des Fibres Optiques Plastiques (CFOP)France:”Plastic Optical Fibres-Practical Application”,edited by J.Marcou,John Wiley & Sons,Masson,1997.
[12] O.Ziemann,H.Steinberg,P.E.Zamzow:”NewTechnologies with POF for Automotive and Building application”,Alcatel Kabel , autoelectric GmbH , May 2000.
[13] T. Yoshimura, and Y Koyamada. "Analysis of Transmission Bandwidth characteristicsof SI-POF." POF-2003 proceedings. P 119, September 15-17,2003 in Seattle.Available from Information Gatekeepers, Inc.
[14]L. Blyler, V.R. White, R. Ratagini, and M. Park. "Perfluorinated POF: out of the lab, into the real world." POF-2003 proceedings. P 16, September 15-17,2003 in Seattle.
[15] Hyunsoo Kim, Ji-Myon Lee, Chul Huh, Sang-Woo Kim, Dong-Joon Kim, Seong-Ju Park, and Hyunsang Hwang, Appl. Phys. Lett. 77,1903(2000)
[16] Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang, Appl. Phys. Lett. 81, 1326(2002)
[17] X. Guo and E. F. Schubert, J. Appl. Phys. 90, 4191(2001)
[19] S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole Compensation Mechanism of P-Type GaN Films”,Jpn. J. Appl. Phys. 31,1258 (1992).
[20] M. S. Minsky, M. White, and E. L. Hu,“Room-temperature photoenhanced wet etching of GaN”,Appl. Phys. Lett. 68, 1531 (1996).
[21] C. Youtsey , I. Adesida , L. T. Romano and G. Bulman, “Smooth n-type GaN surfaces by photoenhanced wet etching”,Appl. Phys. Lett. 72, 560 (1997).
[22] J. K. Sheu , Y. K. Su ,G. C. Chi ,W. C. Chen, C. Y. Chen, C. N. Huang,J. M. Hong,Y. C. Yu, C. W. Wang, and E. K. Lin,“The effect of thermal annealing on the Ni/Au contact of p-type GaN”, J. Appl. Phys. 83, 3172 (1998).
[23] Li-Chien Chen, Fu-Rong Chen, Ji-Jung Kai,Li Chang,Jin-Kuo Ho, Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Chin-Yuen Chen, and Kwang-Kuo Shih,“Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN ”, J. Appl. Phys. 86, 3826 (1999).
[24] Jin-Kuo Ho , Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Chin-Yuen Chen, and Kwang-Kuo Shih, “Low-resistance ohmic contacts to p-type GaN”, Appl. Phys. Lett. 74, 1275 (1999).
[25] Y. Koide,S. Yamasaki, S. Nagai, J. Umezaki, M. Koike and Masanori Murakami,“Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces”, J. Appl. Phys. 81, 1315 (1997).
[26] J. T. Getty, L. A. Johansson, E. J. Skogen, and L. A. Coldren, “1.55μm bipolar cascade segmented ridge lasers,” IEEE J. Sel. Top. Quantum Electron., vol. 9, no. 5, pp. 1138-1145, Sept./Oct. 2003.
[27] P. Modh, S. Galt, J. Gustavsson, S. Jacobsson, and A. Larsson, “Linear Cascade VCSEL Arrays With High Differential Efficiency and Low Differential Resistance,” IEEE Photon. Technol. Lett., vol. 18, pp. 283-285, Jan., 2006.
[28] D. A. Meller, D. S. Chemla, T. C. Damen, A. C. Gross,W.Wiegmann, T.
H. Wood, and C. A. Burrus, “Band-edge electroabsorption in quantum well structures: The quantum-confined stark effect,” Phys. Rev. Lett., vol. 53, pp. 2173–2176, 1984.
[29] D. A. B. Miller, D. S. Chemla, and S. Schmitt-Rink, “Relation between
electroabsorption in bulk semiconductors and in quantum wells: The
quantum-confined Franz-Keldysh effect,” Phys. Rev. B, vol. 33, pp.6976–6982, 1986.
[30] Y. P. Varshni, Physica 34, 149(1967)
[31] Shih-Chang Shei, Jinn-Kong Sheu and Chien-Fu Shen, “Improved power efficiency of LED with cascaded configuration”, submitted
[32] J.-W. Shi, H.-Y. Huang, J.-K. Sheu, C.-H. Chen, Y.-S. Wu, and W.-C. Lai, “The improvement in Modulation Speed of GaN-Based Light-Emitting Diode (LED) by Use of n-Type Barrier Doping for Plastic Optical Fiber (POF) Communication,” IEEE Photon. Technol. Lett., vol. 18, pp. 1636-1638, Aug., 2006.
指導教授 許晉瑋(Jin-Wei Shi) 審核日期 2007-7-17
推文 facebook   plurk   twitter   funp   google   live   udn   HD   myshare   reddit   netvibes   friend   youpush   delicious   baidu   

若有論文相關問題,請聯絡國立中央大學圖書館推廣服務組 TEL:(03)422-7151轉57407,或E-mail聯絡