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姓名 沈家賢(Jia-sian Shen) 查詢紙本館藏 畢業系所 電機工程學系 論文名稱 半導體量子點之穿隧電流
(Tunneling current through a single semiconductor quantum dot)相關論文 檔案 [Endnote RIS 格式]
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摘要(中) 本論文是理論探討流經半導體量子點的穿隧電流，我們使用了兩個能階的安德森模型，來模擬這個系統。穿隧電流分別顯示出庫倫階梯與庫倫振盪的關係，相對於源極-汲極電壓與閘極電壓。穿隧電流頻譜的結構很容易被溫度所抑制。對四重簡併態，穿隧電流不會呈現雙穩態電流的現象。 摘要(英) Is this thesis we theoretically study the tunneling current through a semiconductor quantum dot . The Anderson model with two energy levels is used to simulate our studied system . Tunneling current show , respectively , the staircase and oscillatory behaviers with respect to the sourse-drain voltage and the gate voltage . The structure of current spectrum is easily suppressed by temperature . For the four-fold degenerate state , tunneling current did not exhibit bistable current . 關鍵字(中) ★ 量子點
★ 格林函數
★ 單電子電晶體關鍵字(英) ★ quantum dots
★ single-electron transistors
★ Green's function論文目次 論文摘要 ....................................................................i
Abstract ...................................................................ii
誌謝 ......................................................................iii
目錄 .......................................................................iv
圖目錄 .....................................................................vi
第一章 導論 .................................................................1
1.1 量子點簡介 ..........................................................1
1.2 單電子電晶體的簡介 ..................................................3
1.2.1 單電子電晶體的基本原理 ........................................3
1.2.2 單電子電晶體的應用 ............................................4
第二章 系統模型及原理 .......................................................6
2.1 簡介 ................................................................6
2.2 單能階系統之格林函數 ................................................9
2.3 二能階系統之格林函數 ...............................................11
第三章 單能階系統之穿隧電流 ................................................12
3.1 溫度變化下之穿隧電流 ...............................................12
3.2 參數變化對穿隧電流的影響 ...........................................15
3.2.1 穿隧率的影響 .................................................15
3.2.2 共振態的影響 .................................................15
3.2.3 電子間交互作用力的影響 .......................................16
3.3 非對稱穿隧率之穿隧電流 .............................................18
第四章 二能階系統之穿隧電流 ................................................20
4.1 溫度變化下之穿隧電流 ...............................................20
4.1.1 外加電壓與電子佔據的機率及穿隧電流之關係 .....................20
4.1.2 閘極電壓與電子佔據的機率及穿隧電流之關係 .....................22
4.2 四重狀態之穿隧電流 .................................................25
4.2.1 簡介 .........................................................25
4.2.2 外加電壓與穿隧電流之關係 .....................................26
4.2.3 閘極電壓與電子佔據的機率及穿隧電流之關係 .....................27
4.2.4 非對稱穿隧率之穿隧電流與閘極電壓的關係 .......................29
第五章 結論 ................................................................30
參考文獻 ...................................................................31
附錄 A .....................................................................33參考文獻 [1] Paul Hrrison Quantum Wells, Wires and Dots, “Theoretical and Computational Physics” (1999).
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[25] David M. T. Kuo and Y.C. Chang, “ Tunneling current spectroscopy of nanostructure of junction involving multiple energy levels”,Physical Review Letters 99. 086803 (2007).指導教授 郭明庭(Ming-ting Kuo) 審核日期 2008-7-3 推文 plurk
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