|| R. Dingle, H. L. Stromer, A. C. Gossard, and W. Wiemann, “ Electron mobility in modulation doped semiconductor supperlattices, “ Applied physics lett. Vol. 33, pp. 665, Oct. 1978.|
 M. Golio, RF and microwave semiconductor device handbook, CRC press Washington DC.
 A. K. Mrunal, M. A. Shirasgaonkar, and R. Patrikar, “Stacked Active Loads For Low Power, High Speed GaAs Digital Circuits (SALFL),” IEEE Asia pacific conference on circuit and systems, Digest, pp. 1488-1491, Dec. 2006.
 Y. J. Chan and D. Pavlidis, “ High performance E/D-mode InAlAs/InGaAs HIGFET technology and integrated logic functions,” International indium phosphide and related materials conference, Digest, pp. 499-502, April 1992.
 K. R. Nary and S. I. Long, “GaAs two-phase dynamic FET logic: a low-power logic family for VLSI,” IEEE J. solid-state circuits, Vol. 27, No. 19, pp. 1364-1371, Oct. 1992.
 P. K. T. Mok and C. A. T. Salama, “A novel high-voltage high-speed MESFET using a standard GaAs digital IC process,” IEEE trans. Electron Devices, Vol. 41, No. 2 pp. 246-250, Feb. 1994.
 C. Mohamed, A. Khy, and B. Huyart,” A 1–20-GHz Broadband MMIC Demodulator for Low IF Receivers in Multistandard Applications,” IEEE trans. Microwave Theory tech., Vol. 57, No. 10, pp. 2318-2328, Oct. 2009.
 H.Y. Chang C. K. Lin, and Y. C. Wang, “A 30–130 GHz Ultra Broadband Direct-Conversion BPSK Modulator Using a 0.5-μm E/D-PHEMT Process,” IEEE microwave and wireless components lett., Vol. 17, No. 11, pp. 805-807, Nov. 2007.
 K. Kohama, M. Nakamura, K. Onodera, S. Wada, S. Tamari, and Y. Mizunuma, “ An antenna switch MMIC for GSM/UMTS handsets using E/D-mode JpHEMT technology,” IEEE radio frequency integrated circuit symposium, Digest, pp. 509-512, June, 2005.
 V. Corso, E. M. Bastida, V. Patiri, and C. A. Finardi, “Design and producibility optimization of single-bias d.c. coupled 10 Gbit/s MMIC transimpedance amplifiers using a GaAs enhancement/depletion PHEMT technology,” IEEE microwave and optoelectronics conference, Digest, Vol. 1, pp. 261-263, Aug. 1999.
 C. M. Snowden and R. R. Pantoja, “Quasi-two-dimensional MESFET simulations for CAD,” IEEE trans. Electron Devices, Vol. 36, No. 9, pp. 1564-1574, Sept. 1989.
 W. R. Curtice, “A MESFET Model for Use in the Design of GaAs Integrated Circuits,” IEEE trans. Microwave Theory Tech., Vol. 28, No. 5, pp. 448-456, May 1980.
 W. Curtice and M. Ettenberg, “A nonlinear GaAsFET model for use in the design of output circuits for power amplifiers,” IEEE Trans. Microwave Theory Tech., Vol. MTT-33, pp. 1383-1394, Dec. 1985.
 H. K. Gummel and H. C. Poon, “An integrated charge control model for bipolar transistors,” Bell Syst. Tech. J., Vol. 49, pp. 827-952, May 1970.
 D. E. Root, M. Pirola, S. Fan, W. J. Anklam, and A. Cognata, "Measurement-based large-signal diode modeling system for circuit and device design," IEEE Trans. Microwave Theory Tech., vol. 41, No. 12, pp. 2211-2217, Dec. 1993.
 Q. J. Zhang, Neural networks for RF and microwave design, Boston MA: Artech House, 2000.
 H. Statz, P. Newman, I. Smith, R. Pucel, and H. Haus, “GaAs FET device and circuit simulation in SPICE,” IEEE trans. Electron Devices, Vol. 34, No.2, pp. 160-169, Feb. 1987.
 I. Angelov, H. Zirath, and N. Rorsman, “A new empirical nonlinear model for HEMT and MESFET devices,” IEEE trans. Microwave Theory Tech., Vol. 40, No. 12, pp. 2258-2266, Dec. 1992.
 A. E. Paker and D. J. Skellern, “ A realistic large-signal model MESFET model for spice,” IEEE trans. Microwave Theory Tech., Vol. 45, No. 9, pp. 1563-1571, Sep. 1997.
 V. I. Cojocaru and T. J. Brazil, “A scalable general-purpose model for microwave FETs including DC/AC dispersions effects,” IEEE trans. Microwave Theory Tech., Vol. 45, No. 12, pp. 2248-2255, Dec. 1997.
 J. Kim and Y. Kwon, “ Intermodulation analysis of dual-gate FET mixers,” IEEE trans. Microwave theory tech., Vol. 50. No. 6, pp. 1544-1555, June 2002.
 I. Kallfass, H. Massler, A. Leuther, A. Tessmann, and M. Schlechtweg, “A 210 GHz Dual-Gate FET Mixer MMIC with 2 dB conversion gain, high LO-to-RF isolation, and low LO-Drive requirements,” IEEE microwave and wireless components lett., Vol. 18. No. 8, pp. 557-559, Aug. 2008.
 Z Gu, D. Johnson, S. Belletete, and D. Fryklund,” Low insertion loss and high linearity PHEMT SPDT and SP3T switch ICs for WLAN 802.11 a/b/g applications,” IEEE radio frequency integrated circuits symposium, Digest. pp. 505-508, June 2004.
 Y. Chen and Z. Chen, “A dual-gate FET subharmonic injection-locked self-oscillating active integrated antenna for RF transmission,” IEEE microwave and wireless components lett. Vol. 13, No. 6, pp. 199-201, June 2003.
 B. Kim, H. Q. Tserng, and P. Saunier, “ GaAs dual-gate FET for operation up to k-band,” IEEE trans. Microwave Theory Tech., Vol. 32, No. 3, pp. 256–261, Mar, 1984.
 I. Ohbu, T. Tanimoto, S. Tanaka, H. Matsumoto, A. Terano, M. Kudo, T. Nakamura, “ High-efficiency dual-gate InGaAs pseudomorphic HEMTs for high-power amplifiers using single-voltage supply,” International electron devices meeting, Digest, pp. 189-192, Dec. 1995.
 J. Ibrahim, B. Syrett, and J. Bennett, “A new analytical small-signal model of dual-gate GaAs MESFET,” IEEE international microwave symposium, Digest, Vol. 2, pp. 1277-1289, May 2001.
 W. K. Deng and T. H. Chu, “Elements extraction of GaAs dual-gate MESFET small-signal equivalent circuit,” IEEE trans. Microwave Theory Tech. Vol. 46, No. 12, pp. 2383-2390, Dec. 1998.
 S. Bashirzadeh, A. Nabavi, and M. Fardis, “GaAs DGMESFET modeling using SGMESFET models,” IEEE international radio frequency integration technology: integrated circuit for wideband communication and wireless sensor network workshop, proceedings, pp. 202-206, Dec. 2005.
 M. Abdeen and M. C. E. Yagoub, “Nonlinear and Isothermal Neural-Based Modeling of the Dual Gate MESFET,” Electrical and computer engineering conference, pp. 103-106, April 2007.
 W. S. Percival, “ Thermionic value circuits,” British Patent 460562, Jan. 1937.
 H. W. Horton, J. H. Jasberg, and J. D. Noe, “Distributed Amplifiers: Practical Considerations and Experimental Results,” Proceeding of the IRE, Vol. 38, No. 7, pp. 748-753, July 1950.
 J. B. Beyer, S. N. Prasad, R. C. Becker, J. E. Nordman, and G. K. Hohoenwarter, “MESFET distributed amplifier design guidelines,” IEEE trans. Microwave Theory Tech., Vol. 32, No. 3, pp. 268-275, March 1984.
 R. Larue, S. Bandy, and G. Zdasiuk, “A High Gain, Monolithic Distributed Amplifier Using Cascode Active Elements,” IEEE international microwave symposium, Digest, Vol. 86, No. 1, pp. 821-824, June 1986.
 S. Deibele, J. B. Beyer, “Attenuation compensation in distributed amplifier design,” IEEE trans. On microwave theory tech. Vol. 37, No. 9, pp. 1425-1433, Sept. 1989.
 W. Kennan, T. Andrade, and C. C. Huang, “A 2—18-GHz monolithic distributed amplifier using dual-gate GaAs FET's,” IEEE trans. Electron Devices, Vol. 31, No. 12, pp. 1926-1930, Dec. 1984.
 PD50-01 0.5 ?m InGaAs pHEMT Enhancement/Depletion-mode device (E/D-mode) layout design manual, Win Semiconductor, Taiwan.
 A. D. Patterson, V. F. Fusco, J. J. McKeown, and J. A. C. Stewart, “ A systematic optimization strategy for microwave device modeling,” IEEE trans. Microwave Theory Tech., Vol. 41, No. 3, pp. 395-405, March 1993.
 C. Dambrine, A. Cappy, F. Heliodore, and E. Playez, “ A new method for determining the FET small-signal equivalent circuit,” IEEE trans. Microwave Theory Tech., Vol. 36, No.7, pp. 1151-1159, July 1988.
 L. T. Wurtz, “ GaAs FET and HEMT small-signal parameters extraction for measurement S-parameters,” IEEE trans. Instrumentation and Measurement, Vol. 43, No. 4, pp. 655-658, Aug. 1994.
 N. Rorsman, M. Garcia, C. Karlsson, and H. Zirath, “ Accurate small-signal modeling of HFET’s for millimeter-wave applications,” IEEE trans. Microwave Theory Tech., Vol. 44, No. 3, pp. 432-437, March, 1996.
 K. Lee, M. S. Shur, A. J. Valois, G. Y. Robinson, X. C. Zhu, and A. V. Derziel, “A new technique for characterization of “End” resistance in modulation-dope FET’s,” IEEE trans. Electron Devices., Vol. 31, No. 10, pp. 1934-1398, Oct. 1984.
 B. L. Ooi and J. Y. Ma, “ An improved but reliable model for MESFET parasitic capacitance extraction,” in Proc. Int. IEEE Radio Frequency Integrated Circuits Symposium, pp. 567-580, June 2003.
 L. Yang. and S. I. Long, “ New method to measure the source and drain resistance of the GaAs MESFET,” IEEE Electron Device Lett., Vol. 7, No. 2, pp. 75-77, Feb. 1986.
 J. M. Golio, Microwave MESFETs and HEMTs, Artech House, 1991.
 Advanced Design System User Manual, Agilent Technologies, Palo Alto, CA, USA.
 A. Materka and T. Kacprzak, “Computer Calculation of Large-Signal GaAs FET Amplifier Characteristics,” IEEE Trans. Microwave Theory Tech., Vol. 33, pp. 129-135, Feb. 1985.
 M. Nakayama, K. Horiguchi, K. Yamamoto, Y. Yoshii, S. Sugiyama, N. Suematsu, and T. Takagi, “A 1.9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer for personal handy-phone system terminals,” in IEEE RF IC Symp. Dig., pp. 205-205, June 1998.
 T. Ranta, J. Ella, and H. Pohjonen, “Antenna switch linearity requirements for GSM/WCDMA mobile phone front-ends,” in European Wireless Technology Conf. Dig., pp. 23-26, Oct. 2005.
 R. S. Virk and S. A. Maas, “Modeling MESFET’s for intermodulation analysis of resistive FET mixers,” in IEEE MTT-S Int. Microwave Symp. Dig., pp. 1247-1250, 1995.
 S. Peng, P. J. McCleer, and G. I. Haddad, “Intermodulation analysis of FET resistive mixers using Volterra series,” in IEEE MTT-S Int. Microwave Symp. Dig., pp. 1377-1380, 1996.
 K. Yhland, N. Rorsman, M. Garcia, and H. F. Merkel, “A symmetrical nonlinear HFET/MESFET model suitable for intermodulation analysis of amplifiers and resistive mixers,” IEEE Trans. Microwave Theory Tech., Vol. 48, pp. 15-22, Jan. 2000.
 J. Wood and D. E. Root, “A symmetric and thermally-de-embedded nonlinear FET model for wireless and microwave applications,” in IEEE MTT-S Int. Microwave Symp. Dig., pp. 35-38, June 2002.
 J. Xu, D. Gunyan, M. Iwamoto, J. M. Horn, A. Cognata, and D. E. Root, “Drain-source symmetric artificial neural network-based FET model with robust extrapolation beyond training data,” in IEEE MTT-S Int. Microwave Symp. Dig., pp. 2011-2014, June 2007.
 A. Ehoud, L. P. Dunleavy, S. C. Lazar, and R. E. Branson, “Extraction techniques for FET switch modeling,” IEEE Trans. Microwave Theory Tech., Vol. 43, pp. 1863-1868, Aug. 1995.
 H. Mizutani, N. Funabashi, M. Kuzuhara, and Y. Takayama, “Compact DC-60-GHz HJFET MMIC switches using ohmic electrode-sharing technology,” IEEE Trans. Microwave Theory Tech., Vol. 46, pp. 1597-1603, Nov. 1998.
 R. H. Caverly, “On-state distortion in high electron mobility transistor microwave and RF switch control circuit,” IEEE Trans. Microwave Theory Tech., Vol. 48, pp. 98-103, Jan. 2003.
 R. H. Caverly, “Distortion in off-state Arsenide MESFET switches,” IEEE Trans. Microwave Theory Tech., Vol. 41, pp. 1323-1328, Aug. 1993.
 R. S. Virk, and S. A. Maas, “Modeling MESFET’s for Intermodulation Analysis in RF Switches,” IEEE Microwave Guided Wave Letters, Vol. 4, pp. 376-378, Nov. 1994.
 J. A. Garcia, M. L. De la Fuente, J. C. Pedro, A. Mediavilla, A. Tazon, and J. L. Garcia, “Intermodulation distortion reduction with drain bias in parallel MESFET switch,” IEE Electronics Letters, Vol. 35, pp.907-909, May 1999.
 M. A. Holm and D. M. Brookbanks, “Advanced meander gate p-HEMT model for accurate harmonic modeling of switch MMIC designs,” in European Gallium Arsenide and Other Semiconductor Application Symp. Dig., pp. 317-320, Oct. 2005.
 C. J. Wei, A. Klimashov, Y. Zhu, E. Lawrence, and G. Tkachenko, “Large-signal pHEMT switch model, which accurately predicts harmonics and two-tone inter-modulation distortion,” in IEEE MTT-S Int. Microwave Symp. Dig., pp. 1155-1158, June 2005.
 N. Scheinberg, and A. Pinkhasov, “A computer simulation model for simulating distortion in FET resistors,” IEEE Trans. Computer-Aided Design of Integrated Circuits and System, Vol. 19, pp. 981-989, Sept. 2000.
 P. Bendix, P. Pakers, P. Wagh, L. Lemaitre, W. Grabinski, and C. C. McAndrew, “RF distortion analysis with compact MOSFET models,” in IEEE Custom Integrated Circuits Conf. Dig., pp. 9-12, Oct. 2004.
 M. Wren and T. J. Brazil, “Enhanced prediction of pHEMT nonlinear distortion using a novel charge conservative model,” in IEEE MTT-S Int. Microwave Symp. Dig., Vol. 1, pp. 31-34, June 2004.
 I. Angelov, N. Rorsman, J. Stenarson, M. Carcia, and H. Zirath, “An empirical table-based FET model,” IEEE Trans. Microwave Theory Tech., Vol. 47, pp. 2350-2357, Dec. 1999.
 IC-CAP User Manual, Agilent Technologies, Palo Alto, CA, USA.
 S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd Edition, New York: Wiley-Interscience, 2007.
 W. R. Curtice, J. A. Pla, D. Bridges, T. Liang, and E. E. Shumate, “A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs,” IEEE microwave symposium, Digest, Vol. 2, pp. 419-422, June 1999.
 Agilent B1500A semiconductor device analyzer: easy high power pulse I-V measurement using the Agilent B1500A’s HV-SPGU module, Agilent Technologies, Palo Alto, CA, USA.
 High frequency transistor primer part III thermal properties, Agilent Technologies, Palo Alto, CA, USA.
 Operating manual automated tuner system pc based application software, MuaryTM microwave USA.
 S. Asai, F. Murai, H. Kodera, “ GaAs dual-gate Schottky-barrier FET's for microwave frequencies,” IEEE trans. Electron Devices, Vol. 22, No. 22, pp. 897-904, Oct. 1975.
 W. S. Lour, M. K. Tsai, K. C. Chen, Y. W. Wu, S. W. Tan, and Y. J. Yang, “High -linearity and variable-voltage swing dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors,” Optoelectronic and microelectronic materials and devices conference digest, pp. 226-229, Dec. 2000.
 E. Class, M. Shields,and A. Reyes ,” High performance single supply power amplifiers for GSM and DCS applications using true enhancement mode FET technology,” IEEE MTT-s Int. Microwave Symp. Dig, vol. 1, pp.557-560, Jun, 2002.
 W. Abey, T. Moriuchi, R. Hajji, Y. Nonaka, E. Matani, W. Kennan, and H.
Dong ,” A single supply high performance PA MMIC for GSM handsets using
quasi-enhancement mode PHEMT,” IEEE MTT-s Int. Microwave Symp. Dig, vol. 2, pp. 923-926, Jun., 2001.
 T. Tanimoto, I. Ohbu, S. Tanaka, A. Kawai, M. Kudo, A. Terano, T. Nakamura,"
“Single-voltage-supply highly efficient E/D dual-gate pseudomorphic double- hetero HEMT’s with platinum buried gates ” IEEE Trans. Electron Devices, vol. 45, pp. 1176-1182 June 1998
 N. Harada, S. Kuroda, T. Katakami, K. Hikosaka, T. Mimura, and M. Abe,” Pt-base gate enhancement-mode InAlAs/InGaAs HEMT’s for large-scale integration,” Indium Phospide and Related Materials, 3rd International Conference, pp. 377-380, April 1991.
 I Adesida, A Mahajan, and G Cueva,” Enhancement-mode InP-based HEMT devices and applications,” Indium Phosphide and Related Materials, International Conference, pp. 493-496, May 1998.
 P. K. T Mok, and C. A. T. Salama, “A novel high-voltage high-speed MESFET using a standard GaAs digital IC process”, IEEE Trans. Electron Devices., vol. 41, pp. 246–250, Feb. 1982.
 R. Thompson, V. Kaper, T. Prunty, and J. R. Shealy, “Improvement of high speed
blocking voltage by means of metal field plate for GaAs Schottky power rectifiers”, Power Semiconductor Devices and ICs, Proceedings of the 3rd International Symposium on, pp. 159-163, Apr. 1991.
 A. Inoue, S. Goto, T. Kunii, T. Ishikawa, Y. Matsuda, “A high efficiency, high voltage, balanced cascode FET,” IEEE MTT-S Int. Microwave Symp. Dig., pp. 669-672, June 2005.
 T. Furutsuka, M. Ogawa, and N. Kawamura,” GaAs dual-gate MESFET's,” IEEE Trans. Electron Devices, vol. 25, pp. 580-586, Jun. 1978.
 L. Lee, W. Long, S. Strahle, D. Geiger, B. Henle, H. Kunzel, E. Mittermeier, U. Erben, U. Spitzberg and E. Kohn,” Dual-gate HFET with closely spaced electrodes on InP,” Proceedings of IEEE Cornell Conference., pp. 522-531, 1995.
 P. J. Tasker and B. Hughes,” Importance of source and drain resistance to the maximum fT of millimeter-wave MODFETs,” IEEE Electron. Device Lett., Vol. 10, pp.291-293, July 1989.
 H. Rohdin, Chung-Yi Su, N. Moll, A. Wakita, A Nagy, V. Robbins, and M. Kauffman,” Semi-analytical analysis for optimization of 0.1-μm InGaAs-channel MODFETs with emphasis on on-state breakdown and reliability,” Indium Phosphide and Related Materials, International Conference, pp. 357-360, May 1997
 Sandeep R. Bahl and Jesus A. del Alamo,” A new drain-current injection technique for the measurement of off-state breakdown voltage in FET’s,” IEEE Electron Device Lett., Vol. 40, pp. 1558-1560, Aug. 1993.
 Y. H. Chow and T. Chong, “ A high performance 2.4 GHz linear power amplifier in enhancement-mode GaAs pHEMTs technology,” 34th Microwave Conference European, Vol. 1, pp. 5-8, 2004.
 C. K. Chu, H. K. Huang, C. C. Wang, Y. H. Wang, C. C. Hsu, W. Wu,, C. L. Wu, and C. S. Chang, “A 3.3 V self-biased 2.4-2.5GHz high linearity PHEMT MMIC power amplifier,” Proceedings of international Solid-state Circuits Conference, pp.667-670, 2003.
 M. Park, A. Hokyun, D. M. Kang, J. Honggu, J. Mun, H. Kim, and K. I. Cho,” Single supply, high linearity, high efficient PHEMT power devices and amplifier for 2 GHz & 5 GHz WLAN applications,” 33th Microwave Conference European, vol. 1, pp.371-374, 2003.
 T. Quach, and J. Staudinger, “A high efficiency commercial GaAs MESFET power amplifier for PCM/CIA applications at 2.45 GHz,” Proceedings of Gallium Arsenide Integrated Circuit Symposium, pp. 179-182, 1994.
 D. K. Shaeffer and T. H. Lee, “A 1.5-V, 1.5-GHz CMOS low noise amplifier,” IEEE J. Solid-State Circuits, Vol. 32, pp. 745-759, May 1997.
 F. Chao, C. L. Law, H. James, “A 3.1–10.6 GHz Ultra-Wideband Low Noise Amplifier With 13-dB Gain, 3.4-dB Noise Figure, and Consumes Only 12.9 mW of DC Power,” IEEE Microwave and Wireless Components Lett., Vol. 17, pp. 295-297, Apr. 2007.
 M. A. Masud, H. Zirath, and M. Kelly, ”A 45-dB variable-gain low-noise MMIC amplifier,” IEEE trans. Microwave Theory Tech., Vol. 54, pp. 2848-2855, June 2006.
 W. R. Deal, M. Biedenbender, P. H. Liu, J. Uyeda, M. Siddiqui, and R. Lai, ” Design and Analysis of Broadband Dual-Gate Balanced Low-Noise Amplifiers,” IEEE J. Solid-State Circuits, Vol. 42, pp. 2107 – 2175, Oct. 2007.
 F. J. Tegude, W. Daumann, R. Reuter, W. Brockerhoff,” InAlAs/InGaAs/InP Dual-gate-HFET’s: New aspects And Properties,” Indium Phosphide and Related Materials, 1997, International Conference on, pp. 181-184, May 1997.
 H. Morkner, M. Vice, M. Karakucuk, W. Abey, N. Lan, J. Kessler, and R. Ruebusch, “A Single Chip 802.11abgn Enhancement Mode PHEMT MMIC with dual LNAs, Switches, and Distortion Compensation Power Amplifiers,” IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp. 365 – 368, June 2007.
 M. Nakatsugawa, Y. Yamaguchi, M. Muraguchi, An L-band ultra-low-power-consumption monolithic low-noise amplifier,” IEEE trans. Microwave Theory Tech., Vol. 43, pp. 1745-1750, July, 1995.
 C. Tsironis and R. Meierer, “ Microwave wide-band model for GaAs dual-gate MESFET’s,” IEEE trans. Microwave Theory Tech., Vol. 30, pp. 243-251, Mar., 1982.
 H. Fukui,” Optimal noise figure of microwave GaAs MESFET's,” IEEE Trans. Electron Devices, Vol. 26, pp. 1032-1037, Jul. 1979.
 Y. S. Wang and Lu L. H., “ 5.7 GHz low-power variable gain LNA in 0.18 ?m CMOS,” Electron Lett., Vol. 41, pp. 66-68, Jan. 2005.
 I. Song, J. Jeon, H-S. Jhon, J. Kim, B. G. Park, J. D. Lee, and H. Shin, “A Simple Figure of Merit of RF MOSFET for Low-Noise Amplifier Design, “ IEEE Electron Lett., Vol. 29, pp. 1380 – 1382, Dec. 2008.
 S. Asgaran, M. J. Deen, and C. H. Chen, “A 4-mW monolithic CMOS LNA at 5.7GHz with the gate resistance used for input matching,” IEEE Microwave and Wireless Components Lett., Vol. 16, pp. 188-198, April 2006.
 D. Langrez, E. Delos, and G. Salmer, “ Modelling of 0.15μm Dual Gate PM-HEMTs by using Experimental Extraction,” European Microwave Conference Digest, pp. 355-360, Oct. 1994.
 K. Moez, and M. Elmasry, “A 10dB 44GHz Loss-Compensated CMOS Distributed Amplifier,“ IEEE international Solid-State circuits Conference digest, pp. 548-621, Feb. 2007.
 D. M. Pozar, “ Microwave engineering,” John Wiley & Sons
 R. E. Leoni III, S. J. Lichwala, J. G. Hunt, C. S. Whelan, P. F. Marsh, W. E. Hoke, and T. E. Kazior, “ A dc-45 GHz metamorphic HEMTs traveling wave amplifier, “ IEEE GaAs IC Symposium Digest, pp. 133-136, 2001.
 K. Won and K. Youngwoo, “ Improving noise analysis of distributed preamplifier with cascode FET cells,” IEEE trans on Microwave Theory Tech., Vol 53, No. 1 pp. 361-371, Jan. 2005.
 W. J. Thompson, “ A broadband low noise dual-gate FET distributed amplifier, “ IEEE Microwave and Millimeter Wave Monolithic circuits Symposium Digest, pp. 11-13, June 1989.
 C. Yuen, Y. C. Pao, and N. G. Bechtel, “ 5-60 GHz high-gain distributed amplifier utilizing InP cascode HEMT’s, “ IEEE J. Solid State Circuits, Vol. 27, No. 10, pp. 1434-1438, Oct. 1992.
 E. Sovero, D. Deakin, W. J. Ho, G. D. Robinson, C. W. Farley, J. A. Higgins, M. F. Chang, “ Monolithic indium phosphide-based HEMT multioctave distributed amplifier,” IEEE MMT-S international Microwave Symposium Digest, pp. 1085-1087, May. 1990.
 J. D. Jin and S. S. H. Hsu, “ A miniaturized 70-GHz Broadband Amplifier in 0.13-?m CMOS Technology,” IEEE trans. Microwave Theory Tech. Vol. 56, No. 12, pp. 3086-3092, Dec. 2008.