博碩士論文 952203013 詳細資訊




以作者查詢圖書館館藏 以作者查詢臺灣博碩士 以作者查詢全國書目 勘誤回報 、線上人數:6 、訪客IP:3.235.191.87
姓名 李福壽(Fu-Shou Li)  查詢紙本館藏   畢業系所 化學學系
論文名稱 OFET材料:電子豐盈暨缺電子芳香環共組成化合物
(OFET material:molecules with both electron-rich and electron-deficient aromatic)
相關論文
★ 含Benzimidazole之電子傳輸材料及其電激發光元件★ 含二噻吩蒽[3,2-b:2′,3′-d]噻吩單元之敏化染料太陽能電池
★ 含benzotriazole 之D-π-A 共軛形光敏染料及其染料太陽能電池★ 可作為「鈣鈦礦太陽能電池」電洞傳輸材料之免摻雜醌共軛小分子
★ 含benzoimidazole 配位基的銥金屬高效能磷光材料★ 以嘧啶為主體之二極化發光材料
★ 含嘧啶配位基的銥金屬磷光材料★ 含Imidazo[1,2-a]pyrimidine 單元的光電材料
★ 含4,5-雙氰基咪唑之小分子及其光伏打電池之應用★ β位取代之Bodipy 衍生物及其在光伏打電池的應用
★ 含thienothiadiazole 之低能帶小分子作為有機光伏打電池光敏染料★ 可作為染料敏化太陽能電池之苯併呋咱衍生物
★ 可作為染敏太陽能電池光敏染料之四嗪與噠嗪衍生物★ 以「添苯並三唑」剛硬片段為共軛架橋之有機光敏染料與高效能染敏太陽能電池
★ 引入四苯基乙烯於硫二苯胺為中心之雙錨基光敏染料與染料敏化太陽能電池
檔案 [Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   [檢視]  [下載]
  1. 本電子論文使用權限為同意立即開放。
  2. 已達開放權限電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。
  3. 請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。

摘要(中) 本論文利用電子豐盈芳香環與缺電子芳香環彼此之相互作用力,將有利於分子堆疊,以期能強化電荷之傳導。所採用之電子豐盈芳香環包括thieno[3,2-b]thiophene、dithieno[3,2-b:2′,3′-a]thiophene、anthracene單元,缺電子芳香環則包括imidzole[1,2-a]pyrimidine、thaizole單元。藉由X-射線繞射儀的分析所合成出系列的化合物,可以得知含有thaizole化合物的結晶度明顯的比imidzole[1,2-a]- pyrimidine化合物好。其中含anthracene與thaizole之化合物DH(SN)2Ant並製成有機場效電晶體元件,化合物經由蒸鍍,沈積於表面經過OTS (octadecyltrichlorosilane)處理之Si基板後,在室溫下可測得電洞移動速率為1.8×10-3 cm2V-1s-1;將基板溫度加熱至60 ℃時,則電洞移動速率將會下降至2.8×10-4 cm2V-1s-1。我們並利用原子力顯微鏡所觀測的影像來瞭解薄膜形態與電洞移動速率之間的關聯。
摘要(英) We strategically design molecules with both electron-rich and electron-deficient aromatic segments because the favorable electronic interaction between them is expected to facilitate π—π interaction and lead to better carrier transport. The electron-rich moieties used include thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-a]thiophene, and anthracene, while imidzole[1,2-a]pyrimidine, and thaizole are used as the electron-deficient moieties. Power X-ray diffraction studies on the series of compounds synthesized indicate that thiazole-containing compounds exhibit better crystallinity than imidzole[1,2-a]- pyrimidine-containing compounds. One of the compound composed of anthracene and thaizole, DH(SN)2Ant, was fabricated into OFET device via vacuum deposition on the SiO2 substrate which was pre-treated with OTS (octadecyltrichlorosilane). The hole mobility measured in was calculated to be 1.8×10-3 cm2V-1s-1 for the organic film deposited at room temperature. However, the mobility decreased to 2.8×10-4 cm2V-1s-1 when temperature of the substrate was raised to 60 ℃ during deposition. Atomic force microscopy was used to analyze the deposited film in order to correlate the morphology of the film with the charge mobility.
關鍵字(中) ★ 缺電子
★ 電子豐盈
★ OFET
關鍵字(英) ★ electron-deficient
★ electron-rich
★ OFET
論文目次 中文摘要------------------------------------------------------------------- I
英文摘要------------------------------------------------------------------- II
謝誌------------------------------------------------------------------------- III
目錄------------------------------------------------------------------------- IV
圖目錄---------------------------------------------------------------------- VI
表目錄---------------------------------------------------------------------- XI
附圖目錄------------------------------------------------------------------- XII
第一章 緒論--------------------------------------------------------------- 1
1.1 前言----------------------------------------------------------- 1
1.2 有機場效電晶體(OFET)的介紹與其基本操作原理- 3
1.3 有機半導體------------------------------------------------- 10
1.4 影響有機場效電晶體效能的因素---------------------- 19
1.5 研究動機----------------------------------------------------- 26
第二章 實驗部分--------------------------------------------------------- 28
2.1 實驗儀器----------------------------------------------------- 28
2-2 實驗藥品---------------------------------------------------- 31
2.3 合成流程----------------------------------------------------- 33
第三章 結果與討論------------------------------------------------------ 61
3.1 合成之探討------------------------------------------------- 61
3.2 熱分析-------------------------------------------------------- 64
3.3 光物理分析------------------------------------------------- 71
3.4 電化學-------------------------------------------------------- 74
3.5 X-ray晶體的探討------------------------------------------- 75
3.6 元件試製----------------------------------------------------- 82
3.7 有機場效電晶體元件------------------------------------- 86
第四章 結論--------------------------------------------------------------- 92
參考文獻------------------------------------------------------------------- 93
附錄------------------------------------------------------------------------- 97
參考文獻 1. Y. Chen; J. Au; P. Kazlas; A. Ritenour; H. Gates; M. McCreary, Nature 2003, 423, 136.
2. J. Zaumseil; H. Sirringhaus, Chem. Rev. 2007, 107, 1296?1323.
3. J. A. Rogers; Z. Bao; A. Makhija; P. Braun, Adv. Mater. 1999, 11, 741.
4. E. Kim; Y. Xia; X.-M. Zhao; G. M. Whitesides, Adv. Mater. 1997, 9, 651.
5. G. Horowitz, Adv. Mater. 1998, 10, 365.
6. A. Facchetti, Materials Today 2007, 10, 28.
7. G. R Dholakia; M. Meyyappan; A. Facchetti; T. J. Marks, Nano Lett. 2006, 6, 11.
8. H. Katz; Z. Bao; S. Gilat, Adv. Mater. 2002, 14, 99.
9. G. Horowitz; X. Peng; D. Fichou; F. Ganrnier, Synth. Met. 1992, 51, 419.
10. R. C. Haddon; A. S. Perel; R. C. Morris; T. T. M- Palsta; A. F. Hebard; R. M. Fleming, J. Appl. Phys. 1995, 67, 121.
11. J.H. Schön; Ch. Kloc, B. Batlogg, Org. Electron. 2000, 1, 57.
12. S. Lee; B. Koo; J. Shin; E. Lee; H. Park, Appl. Phys. Lett. 2006, 88, 162109.
13. A. Afzali; C. D. Dimitrakopoulos; T. L. Breen, J. Am. Chem. Soc. 2002, 124, 8812.
14. V. C. Sundar; J. Zaumseil; V. Podzorov; E. Menard; R. L. Willett; T. Someya; M. E. Gershenson; J. A. Rogers, Science 2004, 303, 1644.
15. J. G. Laquindanum; H. Katz; A. Dodabalapur; A. J. Lovinger, J. Am. Chem. Soc. 1996, 118, 11331.
16. S. Kobayashi; T. Takenobu; S. Mori; A. Fujiwara; Y. Iwasa, Appl. Phys. Lett. 2003, 82, 4581.
17. C. Waldauf; P. Schilinsky; M. Perisutti; J. Hauch; C. J. Brabec, Adv. Mater. 2003, 15, 2084.
18. M. Chikamatsu; S. Nagamatsu; Y. Yoshida; K. Saito; K. Yase; K. Kikuchi, Appl. Phys. Lett. 2005, 87, 203504.
19. B. A. Jones; M. J. Ahrens; M.-H. Yoon; A. Facchetti; T. J. Marks; M. R. Wasielewski, Angew. Chem., Int. Ed. 2004, 43, 6363.
20. A. Dodabalapur; H. E. Katz; L. Torsi; R. C. Haddon, Science 1995, 269, 1560.
21. H. Wang; J. Wang; X. Yan; J. Shi; H. Tian; Y. Geng; D. Yan, Appl. Phys. Lett. 2006, 88, 133508.
22. J. Shi; H. Wang; D. Song; H. Tian; Y. Geng; D. Yan, Adv. Funct. Mater. 2007, 17, 397.
23. R. J. Chesterfield; C. R. Newman; T. M. Pappenfus; P. C. Ewbank; M. H. Haukaas; K. R. Mann; L. L. Miller; C. D. Frisbie, Adv. Mater. 2003, 15, 1278.
24. T. D. Anthopoulos; G. C. Anyfantis; G. C. Papavassiliou; D. M. de Leeuw, Appl. Phys. Lett. 2007, 90, 122105.
25. M. L. Tang; A. D. Reichardt; N. Miyaki; R. M. Stoltenberg; Z. Bao, J. Am. Chem. Soc. 2008, 130, 6064.
26. Y. Sun; Y. Liu; D. Zhu, J. Mater. Chem. 2005, 15, 53.
27. M.-C. Um; J. Jang; J. Kang; J.-P. Hong; D. Y. Yoon; S. H. Lee; J.-J. Kim; J.-I. Hong, J. Mater. Chem. 2008, 18, 2234.
28. M. M. Payne; S. R. Parkin; J. E. Anthony; C.-C. Kuo; T. N. Jackson, J. Am. Chem. Soc. 2005, 127, 4986.
29. I. Doi; E. Miyazaki; K. Takimiya; Y. Kunugi, Chem. Mater. 2007, 19, 5230.
30. K. Xiao; Y. Liu; T. Qi; W. Zhang; F. Wang; J. Gao; W. Qiu; Y. Ma; G. Cui; S. Chen; X. Zhan; G. Yu; J. Qin; W. Hu; D. Zhu, J. Am. Chem. Soc. 2005, 127, 13281.
31. J. H. Oh; S. Liu; Z. Bao; R. Schmidt; F. Würthner, Appl. Phys. Lett. 2007, 91, 212107.
32. Q. Miao; M. Lefenfeld; T.-Q. Nguyen; T. Siegrist; C. Kloc; C. Nuckolls, Adv. Mater. 2005, 17, 407.
33. Y.-C. Chang; Y.-D. Chen; C.-H. Chen; Y.-S. Wen; J. T. Lin; H.-Y. Chen; M.-Y. Kuo; I. Chao, J. Org. Chem 2008, 73, 4608.
34. S. Ando; J.-I. Nishida; H. Tada; Y. Inoue; S. Tokito; Y. Yamashita, J. Am. Chem. Soc. 2005, 127, 5336.
35. S. Ando; R. Murakami; J.-I. Nishida; H. Tada; Y. Inoue; S. Tokito; Y. Yamashita, J. Am. Chem. Soc. 2005, 127, 14996.
36. L. S. Fuller; B. Iddon; K. A. Smith, J. Chem. Soc., Perkin Trans. 1, 1997, 3465.
37. J. Frey; S. Proemmel; M. A. Armitage; A. B. Holmes, org. synth. 2006, 83, 209.
38. K. Ito; T. Suzuki; Y. Sakamoto; D. Kubota; Y. Inoue; F. Sato; S. Tokito, Angew. Chem., Int. Ed. 2003, 115, 1191.
39. T. R. Criswell; B. H. Klanderman, J. Org. Chem. 1974, 39, 770.
40. J. Hassan; L. Lavenot; C. Gozzi; M. Lemaire, Tetrahedron Lett. 1999, 40, 857.
41. T. Bach; S. Heuser, J. Org. Chem. 2002, 67, 5789.
42. F. Valiyev; W.-S. Hu; H.-Y. Chen; M.-Y. Kuo; I. Chao; Y.-T. Tao, Chem. Mater. 2007, 19, 3018.
指導教授 林建村(Jiann T. Lin) 審核日期 2008-7-11
推文 facebook   plurk   twitter   funp   google   live   udn   HD   myshare   reddit   netvibes   friend   youpush   delicious   baidu   
網路書籤 Google bookmarks   del.icio.us   hemidemi   myshare   

若有論文相關問題,請聯絡國立中央大學圖書館推廣服務組 TEL:(03)422-7151轉57407,或E-mail聯絡  - 隱私權政策聲明