常壓式熱氣相沉積系統合成單壁奈米碳管之研究

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姓名

呂智員(Jhih-Yuan Lyu) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

常壓式熱氣相沉積系統合成單壁奈米碳管之研究
(Synthesis of Single-Wall Carbon Nanotubes by Atmospheric Pressure Thermal CVD)

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摘要(中)

本研究使用常壓式熱氣相沉積系統成功合成出高品質的單壁奈米碳管。利用浸漬法將醋酸鈷與醋酸鉬均勻附著於二氧化矽的基板上，並藉由製程溫度與氫氣控制奈米碳管的品質；雙金屬催化劑、催化劑濃度和二氧化矽層厚度控制奈米碳管成長密度。浸漬法結合IC製程，引用最佳實驗參數與浸漬法選擇附著的特性，製作橫向奈米碳管場效電晶體，並由I-V電性量測得知奈米碳管為半導體p-type特性，且觀察到有雙極性(Ambipolar)的現象發生。成長之奈米碳管特性由掃描式電子顯微鏡觀察形貌，透過拉曼光普分析奈米碳管的石墨化；利用徑向呼吸模數、原子力顯微鏡和穿透式電子顯微鏡對單壁奈米碳管進行直徑分析。

摘要(英)

High quality single-walled carbon nanotubes were synthesized by atmospheric pressure Thermal CVD system. Utilize dip-coating method deposit the uniform cobalt acetate and molybdenum acetate on silicon oxide substrate. Control the quality and density of the carbon nanotubes with process temperature, hydrogen flow and bimetallic catalyst(Co/Mo), cobalt concentration, SiO2 thickness, respectively. We fabricated the back-gated SWNT field effect transistor (SWFET). Combining with the integrated-circuit(IC) techniques and dip-coating method, then quotes the best experimental parameter and absorb the characteristic of dip-coating. By I-V electricity measurement knew the carbon nanotube has p-type semiconducting, and the ambipolar phenomenon were discovered. Morphology and graphitization of Carbon nanotubes obtains by SEM and Raman spectroscopy, respectively. Diameter distribution of SWNT analyzed with radial breathing modes(RBM), AFM and TEM..

關鍵字(中)

★ 雙金屬催化劑
★ 浸漬法
★ 單壁奈米碳管
★ 雙極性
★ 電晶體

關鍵字(英)

★ Bimetallic catalyst
★ Dip-coating
★ Single wall carbon nanotube
★ Transistor
★ Ambipolar

論文目次

摘要 i
目錄 iii
圖目錄 v
表目錄 ix
符號表 x
第一章緒論 1
1-1 前言 1
1-2 研究動機與目的 2
1-3 文獻回顧 3
1-3-1 沈積金屬催化劑之技術 3
1-3-2 奈米碳管場效電晶體(CNT-FET) 5
第二章奈米碳管的介紹 9
2-1 奈米碳管的起源 9
2-2 奈米碳管的結構 12
2-3 奈米碳管之成長機制 16
2-4 奈米碳管之合成技術 17
2-5 奈米碳管之特性與應用 21
第三章實驗方法與設備 24
3-1 實驗流程 25
3-2 實驗設備簡介 26
3-3 浸漬法 (Dip-coating method) 30
3-3-1 浸漬法步驟與方法 30
3-3-2 Dip-coating溶液之配製 32
3-4 試片的備製 32
3-4-1 試片清洗程序 32
3-4-2 二氧化矽試片 33
3-4-3 三極元件 33
3-5 Thermal CVD成長奈米碳管之步驟 40
3-5-1 常壓式熱氣相沉積系統 40
3-5-2 低壓式熱氣相沉積系統 41
3-6 奈米碳管特性分析 42
第四章結果與討論 48
4-1 試片清洗對浸漬法之影響 48
4-2 雙金屬催化劑的影響 50
4-3 製程參數對奈米碳管成長之影響 54
4-3-1 製程溫度對奈米碳管成長之影響 55
4-3-2 氫氣對奈米碳管成長之影響 60
4-3-3 還原時間對奈米碳管成長之影響 64
4-3-4 反應時間對奈米碳管成長之影響 65
4-4 催化劑濃度之影響 69
4-5 二氧化矽厚度對奈米碳管成長之影響 72
4-6 浸漬法於三極元件之應用 75
4-6-1 剝離法(Lift-off method) 77
4-6-2 蝕刻法(Etching method) 80
4-6-3 浸漬法(Post dip-coat method) 82
第五章結論 86
參考文獻 87

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指導教授

丁志華、黃豐元
(Jyh-Hua Ting、Fuang-Yuan Huang)

審核日期

2008-7-7

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