薄膜電性效應對等離子體注入之影響研究

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林宛蓉(Wan-jung Lin) 查詢紙本館藏

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機械工程學系

論文名稱

薄膜電性效應對等離子體注入之影響研究
(The Effect of The Thin Film Electric Characteristic for Plasma Immersion Ion Implantation)

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摘要(中)

一般製作高品質的SOI 薄膜技術，通常是以離子佈植技術結合晶
圓鍵合的智切法，但由於離子佈植技術具有單方向(line-of-sight)離子
佈植限制，且又因離子束的截面積很小，佈植時需耗費較多掃瞄時
間，造成佈植時間較長，產能較低，又加上設備昂貴等缺點。因此，
本論文主要目的是利用電漿浸沒離子佈植技術 ( Plasma immersion
ion implantation ，PIII )取代離子佈植技術。而PIII 的缺點是缺少質
量分析器和佈植環境低真空度，因此，雜質的存在是PIII 面臨到最大
的難題。為了改善這些缺陷，本實驗在氧化層上方成長一多晶矽層，
作為阻擋雜質的犧牲層，已成功地克服雜質的問題。另外利用多晶矽
摻雜的方式，改變薄膜電性，藉由薄膜電性的改變以增加氫離子植入
矽中的數量。本論文中主要也會針對薄膜電性對電漿離子植入之影響
作一深入的探討與研究。

摘要(英)

It’s a well known in the art to produce the high quality silicon layer
of SOI wafer by Smart-Cut® technology. However, the conventional ion
implantation in Smart-Cut® process, a line-of-sight beam, which has a
small cross-sectional area causes long implantation time, low throughput
and expensive equipment-cost. Therefore, the main purpose of this study
is to use plasma immersion ion implantation (PIII) in the ion implantation
step. Due to the absence of a mass spectrometer and the non-UHV
environment, the presence of impurities during implantation becomes the
maim problem of applying PIII technology. In order to minimize the
impurity concentration, it is deposited a sacrificial polycrystalline silicon
(poly-Si) layer above the silicon oxide layer. According to the
experimental results, the polycrystalline silicon layer can reduce those
problems of impurities successfully. The second topic of this study is to
dope the poly-Si layer and utility the electric characteristics of it for
increasing the amount of implanted hydrogen ions. This study also
confers to the effects in PIII made by the electric characteristic of poly-Si layer.

關鍵字(中)

★ 電漿浸沒離子佈植
★ 離子佈植
★ 絕緣層矽晶

關鍵字(英)

★ silicon on insulator
★ plasma immersion ion implantation
★ ion implantation

論文目次

總目錄
摘要…………………………………………………………………I
英文摘要……………………………………………………………II
誌謝辭………………………………………………………………III
總目錄………………………………………………………………IV
圖目錄………………………………………………………………VI
表目錄………………………………………………………………IX
第一章緒論...............................................1
1.1 研究背景............................................1
1.2 研究動機............................................3
第二章文獻回顧...........................................6
2.1 薄膜轉移製程技術....................................6
2.1.1 SIMOX(Separation by Implantation Oxygen)...........6
2.1.2 SPIMOX(Separation by Plasma Implantation of Oxygen)7
2.1.3 BESOI (Bonded and etched-back SOI).................8
2.1.4 ELTRAN®(Epitaxial Layer TRANsfer)..................8
2.1.5 Smart-Cut®.........................................9
2.2 絕緣層矽晶薄膜之優點...............................11
第三章離子佈植技術......................................22
3.1 離子佈植簡介.......................................22
3.1.1 離子佈植原理與機制................................22
3.2 電漿浸沒離子佈植簡介...............................25
3.2.1 電漿浸沒離子佈植原理與機制........................26
3.3 電漿浸沒離子佈植與離子佈植的比較...................28
第四章實驗方法及步驟....................................38
4.1 實驗流程...........................................38
4.1.1 試片準備及清洗....................................38
4.1.2 結晶矽薄膜沈積....................................39
4.1.3 離子佈植..........................................41
4.1.4 電漿浸沒離子佈植..................................42
4.1.5 多晶矽移除........................................42
4.1.6 試片分析..........................................43
4.2　實驗設備與分析儀器.................................44
4.2.1 實驗設備..........................................44
4.2.2 分析儀器..........................................44
第五章實驗結果與討論....................................59
5.1 雜質的阻擋.........................................59
5.2 佈值時間對氫離子植入含量的影響.....................60
5.3 摻雜的作用與影響...................................61
第六章結論..............................................79
參考文獻.................................................81

參考文獻

1. R. R. Schaller, “Moore’s law: past, present and future”, Spectrum, IEEE, Vol. 34, Issue 6, pp. 52-59, Jun 1997.
2. 吳憲昌、陳啟東，“電子電晶體的進展與應用”，自然科學簡訊，第十五卷第四期，pp115-118 (2003)。
3. Andreas Plobl, Gertrud Krauter, “soild-state electronics 44,pp.775-782 (2000).
4. Xiang Lu, “material synthesis for silicon integrated-circuit application using ion implantation”, Berkeley(1997).
5. 莊達人，“VLSI製造技術”，高立圖書有限公司，pp74-578 (2004)。
6. H. Xiao著，“半導體製程技術導論”，羅正忠和張鼎張譯，二版，臺灣培生教育出版 (2004)。
7. G. K. Celler and S. Cristoloveanu, “Frontiers of Silicon-on- Insulator”, Journal of Applied Physics, Vol. 93, Issue 9, pp. 4955-4978, May 2003.
8. J. B. Lasky, et al., “Silicon-on-Insulator (SOI) by Bonding and Etch-Back”, Electron Devices Meeting, 1985 International, Vol. 31, pp684-687 (1985).
9. http://www-03.ibm.com/chips/about/technology/technologies/soi/soipaper.pdf
10. J. B. Kuo and K.-W. Su,CMOS VLSI Engineering: Silicon-on-Insulator (SOI), Kluwer Academic Publishers, Boston, 1998.
11. Tien-His Lee, “Semiconductor thin film transfer by wafer bonding and advanced ion implantation layer splitting technologies” , Duke University, pp100-121 (1998).
12. M. Bruel, “Silicon on insulator material technology” , Electron. Lett., Vol.31, pp1201 (1995).
13. Christophe Maleville and Carlos Mazure, “Smart-Cut® technology：from 300 nm ultrathin SOI production to advanced engineered substrates ” , Solid-State Electronics, Vol. 48, pp1055-1063 (2004).
14. Tien-His Lee, “Manufacturing Method of Thin Film on a substrate” , 00452866 (2001).
15. J.R. Conrad, J.L. Radtke, R.A. Dodd, F.J. Worzala, N.C. Tran, J. Appl. Phys. 62 (1987) 4591.
16. Paul K. Chu, “Instrumental and Process Considerations for the Fabrication of Silicon-on-Insulators (SOI) Structures by Plasma Immersion Ion Implantation”, IEEE Transactions on Plasma Science, Vol. 26, Feb 1998.
17. Anders, Surf. Coat. Technol. 156 (2002) .
18. Sorin Cristoloveanu, Microelectronics Reliability 40 (2000) pp771-777
19. Hong. Xiao, “Introduction to Semiconductor Coating Characterization”, M.S. Thsis, Univ. Manufacturing Technology, Prentice-Hall Inc., 1992.
20. G. L. Sun, et al., “Cool Plasma Activated Surface in Silicon Wafer Direct Bonding Technology ”, Journal de Physique, Vol. 49, No. 9, pp79-82(C4), September 1988.
21. J.-P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI, 3rd Edition, Springer Science+Business Media, Inc., New York, 2004.
22. Q.-Y. Tong et al., “Semiconductor Wafer Bonding: Science and Technology”, John Wiley＆Sons, Inc., New York, pp17-169(1999).
23. Julian Blake, “SIMOX (Separation by Implantation Oxygen)＂Encyclopedia of Physical Science and Technology, third edition, Volume 14, pp805-813(2001).
24. S. S. K. Iyer, X. Lu, J. B. Liu, J. Min, Z. N. Fan, P. Chu, C. M. Hu, and N. W. Cheung, “Separation by plasma immersion of oxygen(SPIMOX) operational phase-space”, IEEE Trans. Plasma Sci., vol. 25, pp1128-1135, Oct. 1997.
25. XIANG LU, S. SUNDAR KUMAR IYER, JIN LEE, BRIAN DOYLE, ZHINENG FAN, PAUL K. CHU, CHENMING HU, and NATHAN W. CHEUNG, “Plasma Immersion Ion Implantation for SOI Synthesis: SIMOX and Ion-Cut”, Journal of Electronic Materials, Vol. 27,No.9(1998).
26. Rossen A. Yankov,“Plasma immersion ion implantation for silicon processing”, Ann. Phys. (Leipzig) 10 (2001) 4, pp279-298.
27. X. Lu, S. S. K. Iyer , J. Min, Z. Fan, J. B. Liu , P. K. Chu, C. Hu, and N. W. Cheung, “SOI MATERIAL TECHNOLOGY USING PLASMA IMMERSION ION IMPLANTATION”, IEEE International conference, Oct. 1996.
28. M. Ito et al., “Scalability potential in ELTRAN®SOI-epi wafer SOI Conference”, 2000IEEE International, 2000.
29. T Yonehara et al., “Epitaxial layer transfer by bond and etch back of porous Si”, Applied Physics Letters, Vol.64, pp2108-2110, April 1994.
30. T Yonehara et al., “ELTRAN®;SOI Wafer Technology ELTRAN”,JSAP International,No.4,pp10-16,2001.
31. H. Habuka, et al., “Roughness of Silicon Surface Heated in Hydrogen Ambient”, Journal of The Electrochemical Society, Vol. 142, Issue 9, pp3092-3098, September 1995.
32. S. S. Iyer and A. J. Auberton-Herv'e, Silicon Wafer Bonding Technology for VLSI and MEMS Applications, Inspec, London, 2002.
33. 傅勁裕，「等離子體浸沒式離子注入中SOI技術的研究」，香港城市大學，碩士論文，2002年。
34. M. Bruel, “Process for the production of thin semiconductor material films”, US Patent 5,374,56, Commissariat A l'Energie Atomique, 1992.
35. M. Bruel, “Silicon on insulator material technology”, Electron. Lett., Vol.31, pp1201, 1995.
36. NC. Bartelt et al., “Ostwald ripening of two-dimensional islands on Si (001)”, Physical Review, B., Vol.54, pp.741-751, 1996
37. J. Grisolia et al., “Kinetic aspects of the growth of platelets and voids in H implanted Si”, Physics Research, B., Vol.178, pp.160-164, 2001
38. JT Borenstein et al., “Kinetic model for hydrogen reactions in boron-doped silicon”, J. Appl. Phys., Vol.73, pp2751–2754, 1993.
39. Y. Taur, et al., Fundamental of Modern VLSI Devices, Cambridge(1998)
40. 陳威良，「電漿離子佈植製作SOI及佈植缺陷之研究」，國立清華大學，碩士論文，民國九十年。
41. 李隆盛，“非正統之金氧半導體場效電晶體”，電子與材料雜誌，pp80-85，2002。
42. 黃文遠，“半導體製程中的真空設備之一：離子植入機”，科儀新知。
43. 施敏著，“半導體元件物理與製作技術”，黃調元譯，初版，國立交通大學出版社(2002)。
44. 張勁燕，“半導體製程設備”，五南圖書出版有限公司，1990。
45. W. De Bosscher, et al.,VMIC Conference,pp442,1993.
46. J.F. Gibbons, “Ion Implantation,”in S. P. Keller, Ed., Handbook on Semiconductors, Vol.3,North-Holland,Amsterdam,1980.
47. D. Burkman, Semiconductor International,pp103,1981.
48. 陳力俊，“微電子材料與製程”，中國材料科學學會，2000。
49. J. F. Ziegler“Ion Implant Science and Technology second Edith”.
50. L. Pauling and R. Hayward, The Architecture of Molecules, Freeman, San Ftancisco,1964.
51. D. Parmanik, et al., Semiconductor International , 1985.
52. Y. Shioya and M. Maeda, Journal of Applied Physics, Vol.60, pp327,1986.
53. H. Ishiuchi, et al., IEDM, pp706,1985.
54. L.E. Katz, et al., Solid State Technology,December.1981,pp87.
55. J.R. Ligenza, Journal of Applied Physics,Vol.36,1965,pp2703.
56. J.M. Pate, et al.,Surface Modification and Alloying, Plenum, pp133 ,1983.
57. D.K.Brice,“Recoil Contribution to Ion Implantation Energy Deposition Distribution,”J. Appl. Phys., Vol.46,pp3385(1975).
58. 張家豪，魏鴻文，翁政輝，“電漿源原理與應用之介紹文”物理雙月刊，廿八卷二期，2006。
59. J. R. Conrad, U.S. Patent No.4,1988.
60. J.R. Conrad, J.L. Radtke, R.A. Dodd, F.J. Worzala, N.C. Tran, J. Appl. Phys. Vol.62 pp4591(1987).
61. N. W. Wang "Plasma immersion ion implantation for semiconductor processing" Materials Chemistry and Physics, Vol.46, pp132(1996).
62. Paul K. Chu et. al., "Plasma immersion ion implantation - a fledgling technique for semiconductor processing" Material Science and Engineering, R17, pp207(1996).
63. A. Anders, “Handbook of Plasma Immersion Ion Implantation and Deposition”, John Wiley & Sons, New York, 2000.
64. S. Rossi, Y. Massiani, E. Bertassi, F. Torregrosa, L.Fedrizzi, Thin Solid Films, pp160 (2002).
65. Michael I. Current, Wei Liua, Ian S. Roth et. al.,“A plasma immersion implantation system for materials modification”, Surface and Coatings Technology ,Vol.136,pp138-141(2001).
66. Instrumental and Process Considerations for the Fabrication of Silicon-on-Insulators (SOI)Structures by Plasma Immersion Ion Implantation.pdf.
67. Nathan W. Cheung,“Processing considerations with plasma immersion ion implantation”,Surface and Coatings Technology,Vol.156, pp24–30(2002).
68. Xiang Lu et al., “Separation of plasma implantation of oxygen to form silicon on insulator”, Appl.Phys.Lett.,Vol.70(13),1997.
69. 曾暐舜，「電漿鞘層受高壓脈衝下的動態實驗量測」，國立清華大學物理所，碩士班論文。
70. Paul K. Chu,“Contamination issues in hydrogen plasma immersion ion implantation of silicon—a brief review”,Surface and Coatings Technology, Vol.156, pp244–252(2002)
71. Lianwei Wang et al.,“Damage in hydrogen plasma implanted silicon”Journal of Applied Physics,Vol.90, No.4 (2001).
72. Michael I. Current et.al., “A plasma immersion implantation system for materials modification”,Surface and Coatings Technology,Vol.136,pp138-141(2001).
73. Cooper, “ Particulate Contamination and Microelectronics Manufacturing: An Introduction”, Aerosol Science and Technology, pp287-299(1986).
74. 陳宏銘，“濕式化學清洗技術與設備研究動向”，電子月刊，五卷四期，pp84-92(1999)。
75. 潘扶民，“積體電路製程濕式洗淨技術”，電子月刊，四卷十一期，pp102-111(1998)。
76. 小川洋輝，崛池靖浩著，“半導體潔淨技術”，顏誠廷譯，普林斯頓國際有限公司，臺北縣，民國九十二年。
77. 洪木清、陳智崇，“高溫快速熱退火技術於AM-OLED TFT-Array之應用”，工業材料雜誌，254期。
78. Ping-Hei Chen,Hsin-Yah Peng, Chia-Ming Hsien,Minking K.Chyu,“The characteristic behavior of TMAH water solution for anisotropic etching on both Silicon substrate and SiO2 layer”,Sensor and Actuators A :Physical, Vol.93,pp132-137(2001).
79. H. Wu, J.Cargo and M. White, “Characterization of Various Etching Techniques for Gate Level Failure Analysis and Substrate Decoration for Advanced Cu/low k Technologies”, Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the, pp242-248(2005).
80. Kazuo Sato, et al.,“Anisotropic etching rates of single-crystal silicon for TMAH water soalution as a function of crystallographic orientation”, Sensor and Actuators A :Physical, Vol.73,pp131-137(1999).
81. Irena Zuubel, Malgorzata Kramkowska,“The effect of isopropyl alcohol on etching rate and roughness of (100) Si surface etched in KOH and TMAH solutions”,Sensors and Actuators 93,pp138-147(2001).
82. H Seidel et al., “Anisotropic Etching of Crystalline Silicon in Alkaline Solutions. I, Orientation Dependence and Behavior of Passivation Layers”, Journal of The Electrochemical Society, Vol.137,No.11,pp3612-3626(1990).
83. 汪建民，“材料分析”, 中國材料科學學會(1998)。
84. 陳力俊，材料電子顯微鏡, 精密儀器發展中心(1999)。
85. Joseph I. Goldstein et.al. “Scanning electron microscopy and X-ray microanalysis”, Plenum, 1992.
86. 劉博文，“LSI製程技術第二版”V，新文京開發出版股份有限公司(2003)。
87. David B.Williams & C. Barry Carter, “Transmission electron microscopy”, Plenum, 1996.
88. 林智仁、羅聖全，“場發射穿透式電子顯微鏡簡介”，工業材料雜誌，201期(2003)。
89. 潘扶民，“二次離子質譜術與淺接面分析”，NDL奈米通訊，第五卷第三期。
90. http://www.simssociety.org/links/software.htm
91. 凌永健，“二次離子質譜儀”，科儀新知，pp36-48(1989)。
92. 張梁興及凌永健，“二次離子質譜儀在微電子工業上的應用”，電子發展月刊， pp50-59 (1990)。
93. 凌永健，“離子束質譜術的原理與應用”，科儀新知，pp20-37 (1990)。

指導教授

李天錫(Tien-his Lee)

審核日期

2008-6-27

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