陣列式側向接面藍光氮化鎵發光二極體

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姓名

林壯聲(Chuang-sheng Lin) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

陣列式側向接面藍光氮化鎵發光二極體
(Array of GaN Based Transverse-Junction Blue Light Emitting Diodes)

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摘要(中)

在本論文中，我們成功展示出在460nm波段，利用陣列式側向接面的方式來改善大型化後發光二極體的輸出功率以及量子效率。我們將陣列的數目從1x1提升到4x4陣列，在相同操作電流下，輸出功率和傳統垂直接面發光二極體比較確實達到改善。之後，我們進行光強度分佈量測，側向接面發光二極體在光強度分佈上的表現，在相同操作電流下，的確是比垂直接面更能達到電流擴散增加光功率。
從以上量測結果，我們推論側向接面的方式確實可以擁有增強內部量子效率的優點，降低發光二極體大型化後面臨到電流壅塞的問題，雖然側向接面發光二極體驅動電壓相對地增加，但我們可以將元件在之後發展上，盡量減少側向接面之間的距離等。

摘要(英)

We demonstrate the array of GaN-based blue-light light-emitting diode (LED), which is composed of GaN-based blue wavelength multiple-quantum-wells (MQWs) and a transverse p-n junction. The device was realized by the re-growth of n-type GaN layers on the sidewall of p-type GaN and MQWS. The non-uniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs can be totally eliminated by incorporating a transverse p-n junction with MQWs.
In output power measurements, the transverse junction light-emitting diodes show higher output power as compare with the conventional vertical junction light-emitting diodes. Moreover, the transverse junction light-emitting diodes with more elements small light-emitting diodes have better current spreading and reduce current crowding effect.

關鍵字(中)

★ 氮化鎵
★ 側向接面
★ 發光二極體

關鍵字(英)

★ light emitting diode
★ transverse junction
★ GaN

論文目次

摘要 I
ABSTRACT II
誌謝 III
目錄 V
圖目錄 VII
表目錄 X
第一章導論 1
§1-1.前言 1
§1-2.高功率發光二極體之發展 4
§1-3.研究動機 5
第二章發光二極體原理介紹與討論 7
§2-1.發光二極體原理 7
§2-2.氮化鎵發光二極體電流壅塞效應 9
§2-3. 使用側向接面之目的 13
§2-4. 藍光氮化鎵發光二極體多量子井結構 15
第三章陣列式氮化鎵發光二極體元件結構及製程 16
§3-1.藍光垂直接面氮化鎵發光二極體元件試片結構 16
§3-2.陣列式垂直接面氮化鎵發光二極體製作流程 18
§3-3. 藍光側向接面氮化鎵發光二極體元件試片結構 30
§3-4. 陣列式側向接面氮化鎵發光二極體製作流程 32
第四章陣列式氮化鎵發光二極體量測結果與討論 45
§4-1. 陣列式氮化鎵發光二極體之電特性量測 45
§4-2. 陣列式氮化鎵發光二極體之光特性量測 48
第五章結論 56
參考文獻 57

參考文獻

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指導教授

許晉瑋、綦振瀛
(Jin-wei Shi、Jen-Inn Chyi)

審核日期

2008-7-23

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