兩段整合光注入式1.55μm高速半導體雷射

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姓名

鄭皓仁(Hao-jen Cheng) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

兩段整合光注入式1.55μm高速半導體雷射
(High-Speed Two Sectional Integrated Optical Injection Semiconductor Lasers at 1.55μm Wavelength)

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摘要(中)

在光纖通訊中，雷射的調制頻寬關係著資料量傳輸的速度，而光注入式鎖態雷射結構，擁有增加共振頻率的特性，然而其結構需要一支外部雷射注入，在實際應用上是非常麻煩的，因此我們提出兩段整合光注入式以InAlGaAs多重量子井的Fabry-Perot半導體雷射，此結構整合光注入式鎖態雷射結構，因此不需要額外的外部雷射注入，可以單一晶片封裝，且不需要光阻絕器或光循環器，也無對光的問題存在，此元件的共振頻率最高可以達到41GHz，在頻率響應上相對於無外部雷射注入時，直接調變的頻寬可以有兩倍的增加，達到20GHz的頻寬。

摘要(英)

As the application of optical communication system, the modulation bandwidth of laser has great effect on data transmission speed. With the view of that, the laser with optical injection-locked structure is proposed to enhance speed performance by use of adding resonance frequencies in semiconductor lasers. However, this structure needs an external injection from other laser cavity, resulting in huge cost, and inconvenience.
In spite of it, in this thesis, we demonstrate a novel InAlGaAs-MQW Fabry-Perot laser with the structure of monolithic optical injection. It can enjoy the advantage such as single chip package, needless of optical isolator or circulator, automatic optical alignment, and environmentally robust. The device can achieve high resonance frequency at 41GHz, and comparing with non optical injecting, directly modulation bandwidth has twice improvement to 20GHz.

關鍵字(中)

★ 光注入式
★ 高速
★ 半導體雷射

關鍵字(英)

★ semiconductor laser
★ optical injection
★ high speed

論文目次

Abstract I
摘要 II
致謝 III
目錄 V
圖目錄 VII
表目錄 XI
第一章序論 1
§ 1.1光纖通訊發展及應用 1
§ 1.2 光注入鎖式雷射簡介 4
§ 1.3 論文動機與架構 8
第二章原理 9
§ 2.1半導體雷射基本原理 9
§ 2.2 半導體雷射頻寬限制之因素 13
§ 2.3光注入式鎖態雷射理論 17
§ 2.4兩段整合光注入式Fabry-Perot半導體雷射設計原理與模擬 18
第三章元件製作概說與詳細製程步驟 23
§ 3.1流程元件製作概說 23
§ 3.2 晶片研磨與劈裂 25
§ 3.3 詳細製程步驟 26
§ 3.4 兩段整合光注入式Fabry-Perot半導體雷射製作流程 29
§ 3.5 蝕刻剖面圖之結果與討論 37
第四章量測系統與量測結果分析 49
§ 4.1量測系統 49
§ 4.2量測結果 51
第五章結論與未來研究方向 65
§ 5.1 總結 65
§ 5.2 未來之研究方向 65
參考資料 67

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指導教授

許晉瑋(J.-W. Shi)

審核日期

2008-7-22

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