參考文獻 |
[1] Kevin Linthicum, Thomas Gehrke, Darren Thomson, Eric Carlson, Pradeep Rajagopal, Tim Smith, Dale Batchelor, and Robert Davis, “Pendeoepitaxy of gallium nitride thin films,” Appl. Phys. Lett.75,196(1999).
[2] T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855(2004).
[3] Chul Huh, Kug-Seung Lee, Eun-Jeong Kang, and Seong-Ju Park, “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface,” J. Appl. Phys. 93, 9383(2003).
[4] J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, Y-C, Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Gotz, N. F. Garder, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys. Lett. 78, 3379(2001).
[5] M. Koike, N. Koide, S. Asami, J. Umezaki, S. Nagai, S.Yamasaki, N. Shibata, H. Amano, and I. Akasaki, “InGaN/GaN multiple quantum wells green LEDs,” in Proc. SPIE International Society for Optical Engineering, vol.3002, pp.36-39(1997).
[6] Sung-Pyo Jung, Chien-Hung Lin, Hon Man Chan, Zhiyong Fan, J. Grace Lu, and Henry P. Lee, “High transparency low resistance oxidized Ni/Au-ZnO contacts to p-GaN for high performance LED applications” phys. stat. sol. (a)201, no.12, 2827-2830(2004).
[7] D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, “Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrate,” IEEE Photon. Technol. Lett. , vol. 17, no. 2, Feb. 2005
[8] MOST Cooperation, Specification Rev. 2.4, May, 2005.
[9] B. Luecke, “Plastic optical fiber steps out of the niche,” Laser Focus World, pp. 91-95, April, 2008.
[10] R. Wirth, B. Mayer, S. Kugler, and K. Streubel, “Fast LEDs for polymer optical fiber communication at 650nm,” Proc. of SPIE, vol. 6013, pp.60130F-1-60103F-8, SPIE, Bellingham, WA, 2005.
[11] M. Akhter, P. Maaskant, B. Roycroft, B. Corbett, P. de Mierry, B. Beaumont and K. Panzer, “200Mbit/s data transmission through 100m of plastic fiber with nitride LEDs,” Electron. Lett., vol. 38, pp.1457-1458, Nov., 2002.
[12] J.-W. Shi, H.-Y. Huang, J.-K. Sheu, C.-H. Chen, Y.-S. Wu, and W.-C. Lai, “The improvement in Modulation Speed of GaN-Based Light-Emitting Diode (LED) by Use of n-Type Barrier Doping for Plastic Optical Fiber (POF) Communication,” IEEE Photon. Technol. Lett., vol. 18, pp. 1636-1638, Aug., 2006.
[13] J.-W. Shi, J.-K. Sheu, C.-K. Wang, C.-C. Chen, C.-H. Hsieh, J.-I. Chyi, and W.-C. Lai, “Linear Cascade Arrays of GaN Based Green Light Emitting Diodes for High-Speed and High-Power Performance,” IEEE Photon. Technol. Lett., vol. 19, pp. 1368-1370, Sep., 2007.
[14] J.-W. Shi, J.-K. Sheu, C.-H. Chen, G.-R. Lin, and W.-C. Lai, “High-Speed GaN-based Green Light Emitting Diodes with Partially n-doped Active Layers and Current-Confined Apertures,” IEEE Electron Device Lett., vol. 29, pp. 158-160, Feb., 2008.
[15] S. Y. Huang, R.-H. Horng, P. L. Liu, J. Y. Wu, H. W. Wu, and D. S. Wuu, “Thermal Stability Improvement of Vertical Conducting Green Resonant-Cavity Light-Emitting Diodes on Copper Substrates,” IEEE Photon. Technol. Lett., vol. 20, pp. 797-799, May, 2008.
[16] A. Mednik, “Automotive LED Lighting Needs Special Drivers,” Power Electronics Technology, pp. 22-28, Aug., 2005.
[17] J. D. Lambkin, B. McGarvey, M. O’Gorman and T. Moriarty, “RCLEDs for MOST and IDB 1394 Automotive Applications,” Proceedings of the 14th International Conference on Polymer Optical Fiber, Hong Kong, 2005.
[18] Hyunsoo Kim, Ji-Myon Lee, Chul Huh, Sang-Woo Kim, Dong-Joon Kim, Seong-Ju Park, and Hyunsang Hwang, “Modeling of a GaN-based light-emitting diode for uniform current spreading,” Appl. Phys. Lett. 77,1903(2000).
[19] Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang, “Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs,“ Appl. Phys. Lett. 81, 1326(2002).
[20] X. Guo and E. F. Schubert, “Current Crowding and Optical Saturation Effects in GaInN/GaN Light-Emitting Diodes,” J. Appl. Phys. 78, 3337(2001).
[21] E. F. Schubert, “LIGHT-EMITTING DIODE”, CAMBRIDGE UNIVERSITY PRESS.
[22] C. C. Hsu, Y. C. Lee, S. P. Yang, P. S. Lee, M. L. Wu, and J. Y. Chang, ‘‘III-nitride Based LED with Omni-directional Light Extraction Enhancement,” 6th International Conference on Optics-photonics Design & Fabrication, Taipei, Taiwan, pp. 355-356, June, 2008.
[23] S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole Compensation Mechanism of P-Type GaN Films”,Jpn. J. Appl. Phys. 31,1258 (1992).
[24] M. S. Minsky, M. White, and E. L. Hu,“Room-temperature photoenhanced wet etching of GaN”,Appl. Phys. Lett. 68, 1531 (1996).
[25] C. Youtsey , I. Adesida , L. T. Romano and G. Bulman, “Smooth n-type GaN surfaces by photoenhanced wet etching”,Appl. Phys. Lett. 72, 560 (1997).
[26] J. K. Sheu , Y. K. Su ,G. C. Chi ,W. C. Chen, C. Y. Chen, C. N. Huang,J. M. Hong,Y. C. Yu, C. W. Wang, and E. K. Lin,“The effect of thermal annealing on the Ni/Au contact of p-type GaN”, J. Appl. Phys. 83, 3172 (1998).
[27] Li-Chien Chen, Fu-Rong Chen, Ji-Jung Kai,Li Chang,Jin-Kuo Ho, Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Chin-Yuen Chen, and Kwang-Kuo Shih,“Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN ”, J. Appl. Phys. 86, 3826 (1999).
[28] Jin-Kuo Ho , Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Chin-Yuen Chen, and Kwang-Kuo Shih, “Low-resistance ohmic contacts to p-type GaN”, Appl. Phys. Lett. 74, 1275 (1999).
[29] Y. Koide,S. Yamasaki, S. Nagai, J. Umezaki, M. Koike and Masanori Murakami,“Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces”, J. Appl. Phys. 81, 1315 (1997).
[30] P. Modh, S. Galt, J. Gustavsson, S. Jacobsson, and A. Larsson, “Linear Cascade VCSEL Arrays With High Differential Efficiency and Low Differential Resistance,” IEEE Photon. Technol. Lett., vol. 18, pp. 283-285, Jan., 2006.
[31] M. Pessa, M. Guina, M. Dumitrescu, I. Hirvonen, M. Saarinen, L. Toikkanen, and N. Xiang, “Resonant cavity light emitting diode for a polymer optical fiber system,” Semicond. Sci. Technol., vol. 17, pp. R1-R9, May, 2002.
[32]L. A. Coldren and S. W. Corzine, “Diode Lasers and Photonic Integrated Circuits.” JOHN WILEY & SONS, INC Chapter 4. |