博碩士論文 955201096 詳細資訊




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姓名 詹清硯(Chin-Yan Chan)  查詢紙本館藏   畢業系所 電機工程學系
論文名稱 微波及毫米波行進波切換器之研製
(Design of Microwave and Millimeter-Wave Traveling Wave Switch)
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摘要(中) 在無線通訊系統中,高性能切換器為射頻前端的一個重要區塊。為了可以設計出一個可以涵蓋多個頻段的切換器,本論文採用具寬頻特性的行進波架構來設計切換器,並針對行進波切換器作改良及應用。
第一章為論文的緒論。第二章介紹本論文設計切換器所採用的主要架構—行進波切換器,並利用兩種製程分別設計兩類行進波收發切換器。第一個電路使用互補式金氧半導體(CMOS)製程設計使用50歐姆四分之ㄧ波長阻抗轉換器的行進波收發切換器,其操作頻率為30到70 GHz。第二個電路使用高速電子移動率電晶體(HEMT)製程設計使用串聯電晶體的行進波收發切換器,操作頻率從直流到44 GHz。第三章利用基底給予負偏壓的技術來改良行進波收發切換器的特性,藉由理論的討論及電路的實測驗證了其確實可改善電路的插入損耗與功率處理能力特性。第四章將行進波切換器應用在雙刀雙擲切換器的設計上,並以環形架構實現,電路的操作頻段可從直流延伸至20 GHz。第五章則為論文的結論。
摘要(英) In a wireless communication system, a high performance switch is an important building block of RF front-end system. In order to achieve a broadband switch, a traveling-wave topology is applied to the circuit design. Also, the improvement and applications of the traveling-wave switch are included in the thesis.
Introduction is given in chapter 1.The switch involved in the thesis are mainly based on the traveling-wave topology. The topology is described by two circuit designs with different processes and specifications in chapter 2: one traveling-wave T/R switch with a 50-Ω, λ/4 impedance transformer is designed using CMOS process, and the operating frequency is from 30 to 70 GHz. The other switch with a series transistor is designed using PHEMT process, and the operating frequency is from DC to 44 GHz. Furthermore, a technique of negative body bias is proposed to improve ciucuit performance in chapter 3. Based on the theory calculation and the experimental results, the insertion loss and power handling capability of the swiches are improved. In addition, a double-pole double-throw (DPDT) traveling-wave switch using a ring structurce is presented in chapter 4, and the operating frequency is from DC to 20 GHz. Finally, the conclusion is given in chapter 5.
關鍵字(中) ★ 微波
★ 毫米波
★ 行進波
★ 切換器
關鍵字(英) ★ switch
★ Millimeter-Wave
★ Microwave
★ Traveling Wave
論文目次 摘要 I
Abstract II
圖目錄 V
表目錄 X
第一章 緒論 1
1.1 研究動機 1
1.2 相關研究發展 2
1.3 論文貢獻 3
1.4 章節簡述 3
第二章 行進波切換器設計 5
2.1 簡介 5
2.2 常見的切換器架構 8
2.3 行進波切換器 11
2.4 行進波收發切換器 13
2.4.1 使用50歐姆四分之一波長阻抗轉換器的行進波收發切換器 14
2.4.1.1 觀念介紹 14
2.4.1.2 使用製程簡介 15
2.4.1.3 電路設計 16
2.4.1.4 量測考量 20
2.4.1.5 量測結果與討論 23
2.4.2 使用串聯電晶體的行進波收發切換器 29
2.4.2.1 觀念介紹 29
2.4.2.2 使用製程簡介 30
2.4.2.3 電路設計 30
2.4.2.4 量測考量 34
2.4.2.5 量測結果與討論 37
第三章 應用基底給予負偏壓技術改善電路特性 45
3.1 簡介 45
3.2 基底給予負偏壓技術相關概念介紹 45
3.3 應用基底給予負偏壓技術之測試電路 53
3.3.1 電路設計 53
3.3.2 量測考量 56
3.3.3 量測結果與討論 57
3.4 閘極浮接電晶體小訊號模型的建立 63
3.4.1 小訊號模型 63
3.4.2 外部參數萃取 65
3.4.3 內部參數萃取 71
3.4.4 小訊號模型建立結果 73
3.4.5 模型帶入電路的結果 76
3.5 使用90 nm製程之收發切換器 80
3.5.1 製程介紹 80
3.5.2 30-93 GHz行進波收發切換器 81
3.5.2.1 電路設計 81
3.5.2.2 量測考量 83
3.5.2.3 量測結果與討論 85
3.5.3 DC-60 GHz行進波收發切換器 93
3.5.3.1 電路設計 93
3.5.3.2 量測考量 95
3.5.3.3 量測結果與討論 97
第四章 雙刀雙擲行進波切換器 105
4.1 簡介 105
4.2 應用行進波概念設計之雙刀雙擲切換器 107
4.2.1 電路設計 107
4.2.2 量測考量 114
4.2.3 量測結果與討論 118
4.3 E-mode電晶體小訊號模型建立 128
4.3.1 元件參數萃取流程介紹 128
4.3.2 外部參數萃取 129
4.3.2.1 VDS=0 V,VGS>Vthrethold 129
4.3.2.2 VDS=0 V,VGS<Vpinch off 135
4.3.3 內部參數萃取 137
4.3.4 模型建立結果 140
4.3.5 尺寸法則(Scaling Rule) 140
4.4 增強式雙刀雙擲行進波切換器電路設計 144
第五章 結論 147
參考文獻 150
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指導教授 張鴻埜(Hong-Yeh Chang) 審核日期 2009-6-19
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