This thesis presents an equivalent circuit approach for development of 1-D and 2-D Schottky Diode Device Simulation. For an equivalent circuit approach, we will convert the traditional semiconductor device’s drift-diffusion model into an equivalent circuit model. Therefore, the device simulation will be changed into the circuit simulation, not only we can use a circuit simulator to make device simulation, but also we can combine the external circuit for the mixed-level simulation. First, we will show 1D and 2D equivalent circuit models. After that, we put them into our circuit simulator. We will show current-voltage, energy band, and C-V simulation.
Then, we will use an Electrode Separation method to measure the accurate capacitance, current-voltage, energy band, and to prove Electrode Separation method and without Electrode Separation method are the same. Finally, by the use of this technique, it’s helpful for us to investigate the interactions between semiconductor devices and circuits in which they are embedded from physical point of view.
 C.-L. Teng, “An equivalent circuit approach to mixed-level device and circuit Simulation,” M. S. Thesis, Institute of EE, National Central University, Taiwan,
Republic of China, Jun, Chapter 2, pp. 5-10, 1997.
 U. V. Bhapkar and R. J. Mattauch, “Numerical Simulation of the Current-Voltage Characteristics of Heteroepitaxial Schottky-Barrier Diode,” IEEE Trans. Electron Devices, vol. 40, pp. 1038-1046, June, 1989.
 S. Selberherr, “Analysis and simulation of semiconductor device”, New York: Springer, 1984.
 Koorosh Aflatooni, Richard Hornsey, Member, IEEE, and Arokia Nathan, Member , “ IEEE ,Reverse Current Instabilities in Amorphous Silicon Schottky Diodes: Modeling and Experiments,” IEEE Trans. Electron Devices. 46, No. 7, July,1999.
 C. C. Chang, S. J. Li, and Y. T. Tsai, “Two-dimensional Mixed-level Device and Circuit Simulation using a simple Band Matrix Solver,” in EDMS 2005, Kaohsiung, Taiwan, 2005.
 K. Mararam and D. O. Pederson, “Coupling algorithms for mixed-level circuit and device simulation”, IEEE transactions on computer-aided design, vol. 11, no.8, pp. 1003-1010, 1992.
 Y. T. Tsai, and T. C. Ke “Electrode Separation Method to the Boundary Condition for a-Si TFT Mixed-level Simulation.” International Journal of Numerical Modelling: Electronic Networks, Devices, and Fields, vol.11, pp. 123-130, 1998.
 K. Mayaram and D. O. Pederson, “CODECS: A Mixed-level Device and Circuit Simulation,” in Proc. IEEE Int. Conf. Computer-aided Design, pp. 813-820, Nov. 1987.
 J. W. Lee, “An equivalent circuit approach to mixed-level device and circuit simulation”, M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, Jun. 1997.
 T. Grasser and S. Selberherr, “Mixed-mode device simulation, “ Microelectronics Journal, vol. 31, pp. 873-881, 2000.