博碩士論文 962206010 詳細資訊




以作者查詢圖書館館藏 以作者查詢臺灣博碩士 以作者查詢全國書目 勘誤回報 、線上人數:17 、訪客IP:54.147.29.160
姓名 蔡尚祐(Shang-yu Tsai)  查詢紙本館藏   畢業系所 光電科學與工程學系
論文名稱 LED晶片微結構對光萃取效率及指向性之模擬與分析
(Simulation and analysis of light extraction and directionality for LEDs with micro structures)
相關論文
★ 奈米電漿子感測技術於生物分子之功能分析★ 表面結構擴散片之設計、製作與應用
★ CCD 量測儀器之研究與探討★ 鈦酸鋇晶體非均向性自繞射之研究及其在光資訊處理之應用
★ 多光束繞射光學元件應用在DVD光學讀取頭之設計★ 高位移敏感度之全像多工光學儲存之研究
★ 利用亂相編碼與體積全像之全光學式光纖感測系統★ 體積光柵應用於微物3D掃描之研究
★ 具有偏極及光強分佈之孔徑的繞射極限的研究★ 三維亂相編碼之體積全像及其應用
★ 透鏡像差的量測與MTF的驗證★ 二位元隨機編碼之全像光學鎖之研究
★ 亂相編碼於體積全像之全光學分佈式光纖感測系統之研究★ 自發式相位共軛鏡之相位穩定與應用於自由空間光通訊之研究
★ 體積全像空間濾波器應用於物體 三度空間微米級位移之量測★ 發光二極體導光機構之研究
檔案 [Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   [檢視]  [下載]
  1. 本電子論文使用權限為同意立即開放。
  2. 已達開放權限電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。
  3. 請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。

摘要(中) 在本論文中,我們使用蒙地卡羅光線追跡法建立出LED之光子循環效應的光學模型,並探討在不同的主動層吸收係數之條件下,光子循環效應對於GaN LED和AlGaInP LED之光萃取效率的影響。此外,我們更進一步地選取了表面結構之薄型氮化鎵和圖案式藍寶石基板兩種GaN LED結構,分析當微結構陣列之角錐的角度改變時,其對於晶片之指向性和光萃取效率的提升幅度。
摘要(英) In this thesis, we build the optical model for photon recycling effect of LEDs based on Monte Carlo ray tracing method. According to this model, under different absorption coefficients of the active layer, we analyze the light extraction efficiency with respect to GaN and AlGaInP LEDs. Furthermore, we select two kinds of GaN LED structures such as surface texture of ThinGaN LEDs and patterned substrate of sapphire-based LEDs. Based on these two structures, we analyze the enhancement of the directionality and the light extraction efficiency when the slanted angles of the pyramid array are different.
關鍵字(中) ★ 微結構
★ 指向性
★ 光子循環效應
★ 光萃取效率
★ 發光二極體
關鍵字(英) ★ directionality
★ photon recycling effect
★ light extraction efficiency
★ LED
★ micro structure
論文目次 摘要 I
Abstract II
致謝 III
目錄 IV
圖索引 VII
表索引 XIII
第一章 緒論 1
1-1 前言 1
1-2 LED的發展 1
1-3 研究動機 5
1-4 論文大綱 6
第二章 LED之光學特性 7
2-1 LED發光原理 7
2-2 LED發光效率與量子效率 10
2-1-1 LED內部量子效率 12
2-2-2 LED光萃取效率 15
2-3 LED光萃取效率之提升方法 19
2-4 LED之指向性 30
第三章 LED光學模型的建立 34
3-1 蒙地卡羅光線追跡法 34
3-2 LED光學模型與模擬參數 35
3-3 主動層吸收與光子循環效應 40
第四章 LED光萃取效率及指向性之研究與分析 44
4-1 光子循環效應對LED之光萃取效率的影響 44
4-1-1 氮化鎵LED之光萃取效率分析 44
4-1-2 磷化鋁鎵銦LED之光萃取效率分析 49
4-1-3 結論 58
4-2 晶片微結構對氮化鎵LED指向性之影響 60
4-2-1 表面結構之薄型LED指向性分析 60
4-2-2 圖案式基板LED指向性分析 72
4-2-3 結論 84
第五章 結論 86
參考文獻 88
中英文名詞對照表 93
參考文獻 [1]H. J. Round, “A note on carborundum,” Electrical World 49, 309-310 (1907).
[2]N. Holonyak and S. F. Bevacqua, “Coherent (visible) light emission from Ga(As1-xPx) junctions,” Appl. Phys. Lett. 1, 82-83 (1962).
[3]J. W. Allen, M. E. Moncaster, and J. Starkiewicz, “Electroluminescent devices using carrier injection in gallium phosphide,” Solid-State Electron. 6, 95-102 (1963).
[4]H. G. Grimmeiss and H. J. Scholz, “Efficiency of recombination radiation in GaP,” Phys. Lett. 8, 233-235 (1964).
[5]A. Zukauskas, M. S. Shur, and R. Caska, Introduction to Solid-state Lighting (John Wiley & Sons, New York, 2002).
[6]C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlInGaP visible light emitting diodes,” Appl. Phys. Lett. 57, 2937-2939 (1990).
[7]H. Sugawara, M. Ishikawa, and G. Hatakoshi, “High-efficiency InAlGaP/GaAs visible light-emitting diodes,” Appl. Phys. Lett. 58, 1010-1012 (1991).
[8]H. Amano, N. Sawaki, I. Akasaki, and T. Toyoda, “Metal organic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer,” Appl. Phys. Lett. 48, 353-355 (1986).
[9]Y. Koide, N. Itoh, K. Itoh, N. Sawaki, and I. Akasaki, “Effect of AlN buffer layer on AlGaN/a-Al2O3 heterepitaxial growth by metal organic vapor phase epitaxy,” Jpn. J. Appl. Phys. 27, 1156-1161 (1988).
[10]S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, “Thermal annealing effects on p-type Mg-doped GaN films,” Jpn. J. Appl. Phys. 31, L139-L142 (1992).
[11]S. Nakamura, T. Mukai, and M. Senoh, “High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes,” J. Appl. Phys. 76, 8180-8191 (1994).
[12]S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, “Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes,” Jpn. J. Appl. Phys. 34, L1332-L1335 (1995).
[13]Y. Shimizu, K. Sakano, Y. Noguchi, and T. Moriguchi, “Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material,” United States Patent, US 5998925 (1999).
[14]M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Carford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” IEEE J. Disp. Techno. 3, 160-175 (2007).
[15]Optoelectronics Industry Development Association (OIDA), Light emitting diodes (LEDs) for general illumination: An OIDA technology roadmap update 2002 (Optoelectronics Industry Development Assn., Washington DC, 2002).
[16]E. F. Schubert, Light-Emitting Diodes, 2nd ed. (Cambridge University Press, Cambridge, 2006).
[17]C. J. Nuese, J. J. Tietjen, J. J. Gannon, and H. F. Gossenberger, “Optimization of electroluminescent efficiencies for vapor-grown GaAsP diodes” J. Electrochem. Soc. 116, 248-253 (1969).
[18]高國峯,GaN-LED晶片結構對光萃取效率影響的研究,國立中央大學光電科學研究所碩士論文,中華民國九十五年。
[19]李宗憲,氮化鎵發光二極體之光萃取效率分析與晶片設計,國立中央大學光電科學研究所博士論文,中華民國九十七年。
[20]R. M. Fletcher, C. P. Kuo, T. D. Osentowski, K. H. Huang, and M. G. Carford, “The growth and properties of high performance AlGaInP emitters using lattice mismatched GaP window layers,” J. Electron. Mater. 20, 1125-1130 (1991).
[21]R. M. Fletcher, C. P. Kuo, T. D. Osentowski, and V. M. Robbins, “Light-emitting diode with an electrically conductive window,” United States Patent, US 5008718 (1991).
[22]H. Sugawara, M. Ishakawa, Y. Kokubun, Y. Nishikawa, S. Naritsuka, K. Itaya, G. Hatakoshi, and M. Suzuki, “Semiconductor light-emitting device,” United States Patent, US 5153889 (1992).
[23]H. Sugawara, K. Itaya, H. Nozaki, and G. Hatakoshi, “High-brightness InGaAlP green light-emitting diodes,” Appl. Phys. Lett. 61, 1775-1777 (1992).
[24]K. H. Huang, J. G. Yu, C. P. Kuo, R. M. Fletcher, T. D. Osentowski, L. J. Stinson, and M. G. Craford, “Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620nm spectral region using a thick GaP window layer,” Appl. Phys. Lett. 61, 1045-1047 (1992).
[25]F. A. Kish, F. M. Steranka, D. C. Defevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, M. G. Carford, and V. M. Robbins, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839-2841 (1994).
[26]T. Kato, H. Susawa, M. Hirotani, T. Saka, Y. Ohashi, E. Shichi, and S. Shibata, “GaAs/GaAlAs surface emitting IR LED with Bragg reflector grown by MOCVD,” J. Cryst. Growth 107, 832-835 (1991).
[27]K. M. Chen, A. W. Sparks, H. C. Luan, D. R. Lim, K. Wada, and L. C. Kimerling, “SiO2/TiO2 omnidirectional reflector and microcavity resonator via the sol-gel method,” Appl. Phys. Lett. 75, 3805-3807 (1999).
[28]Y. Fink, J. N. Winn, S. Fan, C. Chen, J. Michel, J. D. Joannopoulos, and E. L. Thomas, “A dielectric omnidirectional reflector,” Science 282, 1679-1682 (1998).
[29]R. H. Horng, D.S. Wuu, S. C. Wei, M. F. Huang, K. H. Chang, P. H. Liu, and K. C. Lin, “AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology,” Appl. Phys. Lett. 75, 154-156 (1999).
[30]R. H. Horng, D. S. Wuu, S. C. Wei, C. Y. Tseng, M. F. Huang, K. H. Chang, P. H. Liu, and K. C. Lin, “AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding,” Appl. Phys. Lett. 75, 3054-3056 (1999).
[31]F. A. Kish and R. M. Fletcher, “AlGaInP light-emitting diodes” in High Brightness Light-Emitting Diodes (Academic, San Diego, 1997).
[32]M. R. Krames, M. Ochiai-Holcomb, G. E. Hofler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S.A. Stockman, F. A. Kish, and M. G. Craford, “High-power truncated- pyramid (AlxGa1-x)0.5 In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. 75, 2365-2367 (1999).
[33]Osram Opto Semiconductors, http://www.osram-os.com
[34]T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855-857 (2004).
[35]N. Linder, S. Kugler, P. Stauss, K. P. Streubel, R. Wirth, and H. Zull, “High-Brightness Light-Emitting Diodes Using Surface Texture,” Proc. SPIE 4278, 19-25 (2001).
[36]R. Windisch, C. Rooman, S. Meinlschmidt, P. Kiesel, D. Zipperer, G. H. Döhler, B. Dutta, M. Kuijk, G. Borghs, and P. Heremans, “Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodes,” Appl. Phys. Lett. 79, 2315-2317 (2001).
[37]T. P. Chen, C. L. Yao, C. Y. Wu, J. H. Yeh, C. W. Wang, and M. H. Hsieh, “Recent Development in High Brightness LEDs,” Proc. SPIE 6910, 691005 (2008).
[38]M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode,” Jpn. J. Appl. Phys. 41, L1431-L1433 (2002).
[39]D. S. Han, J. Y. Kim, S. I. Na, S. H. Kim, K. D. Lee, B. Kim, and S. J. Park, “Improvement of light extraction efficiency of flip-chip light-emitting diode by texturing the bottom side surface of sapphire substrate,” IEEE Photo. Techno. Lett. 18, 1406-1408 (2006).
[40]O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett. 89, 071109 (2006).
[41]C. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, “Analysis of the emission characteristics of photonic crystal LEDs,” Proc. SPIE 6989, 69890L (2008).
[42]M. D. B. Charlton, M. E. Zoorob, and T. Lee, “Photonic Quasi-Crystal LEDs: Design, modelling, and optimisation,” Proc. SPIE 6486, 64860R (2007).
[43]M. P. C. Watts, M. Zoorob, T. Lee, and J. McKenzie, “The value, solution, and costs of patterning LED’s,” Proc. SPIE 6462, 64620N (2007).
[44]C. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, “Photonic Crystal LEDs – designing light extraction,” Laser & Photon. Rev. 3, 262-286 (2009).
[45]D. Z. Ting and T. C. McGill, “Monte Carlo simulation of light-emitting diode light-extraction characteristics,” Opt. Eng. 34, 3545-3553 (1995).
[46]S. J. Lee, “Analysis of light-emitting diode by Monte Carlo photo simulation,” Appl. Opt. 40, 1427-1437 (2001).
[47]A. Badano and J. Kanicki, “Monte Carlo analysis of the spectral photon emission and extraction efficiency of organic light-emitting device,” J. Appl. Phys. 90, 1827-1830 (2001).
[48]C. C. Sun, C. Y. Lin, T. X. Lee, and T. H. Yang, “Enhancement of light extraction of GaN-based LED with introducing micro-structure array,” Opt. Eng. 43, 1700-1701 (2004).
[49]T. X. Lee, C. Y. Lin, S. H. Ma, and C. C. Sun, “Analysis of position-dependent light extraction of GaN-based LED,” Optics Express 13, 4175-4179 (2005).
[50]C. C. Sun, T. X. Lee, S. H. Ma, Y. L. Lee, and S. M. Huang, “Precise optical modeling for lighting based on cross-correlation in mid-field region,” Opt. Lett. 31, 2193-2195 (2006).
[51]T. X. Lee, K. F. Gao, W. T. Chien, and C. C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Optics Express 15, 6670-6676 (2007).
[52]S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen, “AlGaInP Yellow-Green Light-Emitting Diodes with a Tensile Strain Barrier Cladding Layer,” IEEE Photon. Technol. Lett. 9, 1199-1201 (1997).
[53]H. Hamada, R. Hiroyama, S. Honda, M. Shono, K. Yodoshi, and T. Yamaguchi, “AlGaInP Strained Multiple-Quantum Well Visible Laser Diodes (λ≦630 nm Band) with a Multiquantum Barrier Grown on Misoriented Substrates,” IEEE J. Quantum Electron. 29, 1844-1850 (1993).
[54]K. Streubel, N. Linder, R. Wirth, A. Jaeger, “High Brightness AlGaInP Light-Emitting Diodes,” IEEE J. Selected Topics in Quantum Electron. 8, 321-332 (2002).
[55]Th. Gessmann and E. F. Schubert, “High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications,” J. Appl. Phys. 95, 2203-2216 (2004).
[56]J. W. Goodman, Introduction to Fourier Optics, 2nd ed. (McGraw-Hill, New York, 2002).
[57]E. Dupont, H. C. Liu, M. Buchanan, S. Chiu, and M. Gao, “Efficient GaAs light-emitting diodes by photon recycling,” Appl. Phys. Lett. 76, 4-6 (2000).
[58]F. Renner, P. Kiesel, G. H. Doher, M. Kneissl, C. G. Van de Walle, and N. M. Johnson, “Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy,” Appl. Phys. Lett. 81, 490-492 (2002).
[59]J. Kvietkova, L. Siozade, P. Disseix, A. Vasson, J. Leymarie, B. Damilano, N. Grandjean, and J. Massies, “Optical Investigations and Absorption Coefficient Determination of InGaN/GaN Quantum Wells,” Phys. Stat. Sol. 190, 135-140 (2002).
[60]H. P. D. Schenk, M. Leroux, and P. de Mierry, “Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation,” J. Appl. Phys. 88, 1525-1534 (2000).
[61]Breault Research Organization, http://www.breault.com/
指導教授 孫慶成(Ching-cherng Sun) 審核日期 2009-7-23
推文 facebook   plurk   twitter   funp   google   live   udn   HD   myshare   reddit   netvibes   friend   youpush   delicious   baidu   
網路書籤 Google bookmarks   del.icio.us   hemidemi   myshare   

若有論文相關問題,請聯絡國立中央大學圖書館推廣服務組 TEL:(03)422-7151轉57407,或E-mail聯絡  - 隱私權政策聲明