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姓名 陳詩涵(Shih-han Chen)  查詢紙本館藏   畢業系所 光電科學與工程學系
論文名稱 表面微米光柵對Thin-GaN發光二極體光萃取及光型之研究
(A Study of Light Extraction and Light Pattern by Using Surface Micro-Grating of Thin - GaN Light Emitting Diode)
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摘要(中) 以氮化鎵為基礎之發光二極體(GaN - based Light Emitting Diode, LED)目前主要以藍寶石(Sapphire)為基板,由於藍寶石基板熱傳導能力不佳,因此在高功率的操作下會有散熱的問題,而本論文主要在thin - GaN發光二極體的u - GaN製作結構,並以銅為基板,藉由不同線寬同週期的表面微米光柵結構來探討結構線寬的變異對光萃取效率及光型之影響。
本研究中模擬配合製成去分析在thin - GaN發光二極體之u - GaN層製作不同線寬但結構週期相同的光柵結構,探討其光萃取效率上的差異,接著在計算各個結構的光型圖。在製程方面,我們利用乾式蝕刻(Dry Etching)及濕式蝕刻(Wet Etching)製程來製作微米等級的表面氮化鎵光柵結構,透過電致發光的量測,得知線寬分別為3.5、5.5、7以及9 ?m的一維(one dimension)表面光柵結構之thin - GaN 發光二極體,相較於平面的thin - GaN 發光二極體,在光萃取效率上分別有45.5 %、59.9 %、69.1 %及72.7 %的提升。在光型方面,我們可知表面光柵結構可將thin - GaN發光二極體原本光強會隨角度提升而下降的朗柏遜光型,調製為與正向夾角± 60°內光強仍維持在88 %以上的均勻光型,因此可知微米等級的表面光柵結構之斜面可以降低內部全反射的效應,有效的提升在空氣端高頻空間的光萃取量,進而提升整體的光萃取效率。
摘要(英) Because the low heat conductivity of sapphire substrate, so GaN - based light emitting diodes are inappropriate for high - power injection. In this thesis, we applied different line - width of grating structure on u - GaN surface, and to discuss the influence of light extraction efficiency and light pattern.
We fabricated different micro - grating structure by using dry etching and wet etching. Through EL measurement, we found that the light extraction efficiency of different line - width 3.5、5.5、7 and 9 ?m, which enhanced 45.5 %、59.9 %、69.1 % and 72.7 %, respectively. We also found that the grating structure could modulate light pattern of thin - GaN LED from lambertian emission pattern to a uniform emission pattern. In this research, we will analysis the influence of light extraction and light pattern for different grating structure by simulation.
The micro - grating structure of trapezium and triangle can increase extractive area of light from the bevel. The bevel of grating structure can reduce the total internal reflection effect, and improve light extraction efficiency.
關鍵字(中) ★ 氮化鎵
★ 光型
★ 光萃取
★ 微米光柵
★ 發光二極體
關鍵字(英) ★ light pattern
★ light extraction
★ micro-grating
★ LED
★ thin-GaN
論文目次 摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vi
表目錄 viii
第一章 序論 1
1-1 前言 1
1-2 文獻回顧 5
1-3 研究動機 10
第二章 實驗理論背景 14
2-1 發光二極體之光特性原理簡介 14
2-1-1 電光轉換效率 14
2-1-2 光萃取原理 15
2-1-3 發光二極體之遠場光型 19
第三章 表面微米光柵Thin-GaN發光二極體之光學模型與分析 24
3-1 光學模型建立的基本原理 24
3-2 表面微米光柵Thin-GaN發光二極體之光萃取與光型分析 25
第四章 Thin-GaN發光二極體之表面微米光柵製作 30
4-1 Thin-GaN發光二極體之前段製程 30
4-1-1 氮化鎵發光二極體之磊晶結構 30
4-1-2 晶粒定義與鈍化層之製作 30
4-1-3 p側金屬電極與接合金屬之製作 37
4-2 Thin - GaN發光二極體之中段製程 39
4-2-1 電鍍銅基板 39
4-2-2 雷射剝離 41
4-3 Thin - GaN發光二極體之後段製程 41
4-3-1 表面微米光柵之製作 42
4-3-2 n側金屬電極之製作 53
第五章 Thin - GaN發光二極體之量測與結果分析 55
5-1 電致發光之光萃取量測與分析 55
5-2 電致發光之遠場光型量測與分析 58
5-3 模擬與量測之光萃取及遠場光型分析 61
第六章 結論與未來展望 64
6-1 結論 64
6-2 未來展望 65
參考文獻 66
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指導教授 張正陽(Jenq-yang Chang) 審核日期 2009-7-23
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