參考文獻 |
[1] 取自http://www.lexus.com.tw
[2] 取自http://www.cree.com/products/xlamp7090_xre.asp
[3] 取自http://www.sonystyle.com.tw/vaio/#product-SZ-LED
[4] I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, and N. Sawaki, “Effects of AlN buffer layer on crystallographic structure and on electrical and optical-properties of GaN and Ga1-xAlxN films grown on sapphire substrate by MOVPE,” Journal of Crystal Growth, Vol. 98, pp. 209, 1989.
[5] S Nakamura, “GaN growth using GaN buffer layer,” Japanese Journal of Applied Physics Part 2-Letters, Vol. 30, pp. L1705, 1991.
[6] S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, “High-power InGaN single-quantum-well-structure blue and violet light-emitting-diodes,” Applied Physics Letters, Vol. 67, pp. 1868, 1995.
[7] E. Fred Schubert, “Light-Emitting Diodes” 2nd. , Cambridge Univ. Press, New York, 2006.
[8] Katsushi Akita, Takashi Kyono, Yusuke Yoshizumi, Hiroyuki Kitabayashi, and Koji Katayama, “Improvement of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates,” Journal of Applied Physics, Vol. 101, pp. 033104, 2007.
[9] M.R. Krames, G.E. Höfler, E.I. Chen, I.H. Tan, P. Grillot, N.F. Gardner, H.C. Chui, J.W. Huang, S.A. Stockman, F.A. Kish, and M.G.Craford, “High power truncated inverted pyramid AlxGa12x.0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Applied Physics Letters, Vol. 75, pp. 2365, 1999.
[10] H. K. Cho, J. Jang, J.H. Choi, J. Choi, J Kim, J. S. Lee, B. Lee, Y.H. Choe, K.D. Lee, S.H. Kim, K. Lee, S.K. Kim, and Y.H. Lee, “Light extraction enhancement from nanoimprinted photonic crystal GaN-based blue light emitting diodes,” Optics Express, Vol. 14, pp. 19, 2006.
[11] T. Fujii, Y.Gao, R.Sharma, E.L. Hu, S.P. DenBaars, and S. Nakamura, ”Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Applied Physics Letters, Vol. 84, pp. 6, 2004.
[12] Y.J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M.J. Jou, B.J. Lee, T.C. Lu, H.C. Kuo,anc S C. Wang, ”Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates,” IEEE, Vol. 18, pp. 10, 2006.
[13] O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb,P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes” Applied Physics Letters, vol. 89, pp.071109, 2006.
[14] H. W. Huang, H. C. Kuo, Senior Member, IEEE, C. F. Lai, C. E. Lee, C. W. Chiu, T. C.Lu, S. C. Wang, and Life Member, “High-Performance GaN-Based Vertical-Injection Light-Emitting Diodes With TiO2–SiO2 Omnidirectional Reflector and n-GaN Roughness,” IEEE Photonics Technology Letters, vol. 19, No.8,
2007.
[15] Dong-Ho Kim, Chi-O Cho, Yeong-Geun Roh, Heonsu Jeon, Yoon Soo Park, Jaehee Cho, Jin Seo Im, Cheolsoo Sone, Yongjo Park, Won Jun Choi and Q-Han Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Applied Physics Letters, vol. 87, pp. 203508, 2005.
[16] Shao-Hua Huang, Ray-Hua Horng, Kuo-Sheng Wen, Yi-Feng Lin, Kuo-Wei Yen, and Dong-Sing Wuu, “Improved Light Extraction of Nitride-Based Flip-Chip Light-Emitting Diodes Via Sapphire Shaping and Texturing,” IEEE Photonics Technology Letters, vol. 18, No.10, 2006.
[17] C. L. Lin, P. H. Chen, Chia-Hua Chan, C. C. Lee, Chii-Chang Chen, Jeng-Yang Chang, and C. Y. Liu, “Light enhancement by the formation of an Al oxide honeycomb nanostructure on the n-GaN surface of thin-GaN light-emitting diodes,” Applied Physics Letters, vol. 90, pp.242106, 2007.
[18] 史光國,“現代半導體發光及雷射二極體材料技術”,全華科技圖書股份有限公司,台北市,民國九十四年。
[19] Tsung-Xian Lee, Chao-Ying Lin, Shih-Hsin Ma and Ching-Cherng
Sun,“Analysis of position-dependent light extraction of GaN-based LEDs,” Optics Express, vol. 13, No. 11, pp.4175, 2005.
[20] Ching-Cherng Sun, Tsung-Xian Lee, Shih-Hsin Ma, Ya-Luan Lee, and Shih-Ming Huang, “Precise optical modeling for LED lighting verified by cross correlation in the midfield region,” Optics Letters, Vol. 31, No. 14, pp. 2193, 2006.
[21] Chia-Hsin Chao, S. L. Chuang, and Tzong-Lin Wu, “Theoretical demonstration of enhancement of light extraction of flip-chip GaN light-emitting diodes with photonic crystals,” Applied Physics Letters, vol. 89, pp.091116, 2006.
[22] C E Lee, Y C Lee, H C Kuo, M R Tsai, T C Lu, and S C Wang,“ High brightness GaN-based flip-chip light-emitting diodes by adopting geometric sapphire shaping structure,” Semiconductor Science and Technology, Vol. 23, pp. 025015, 2008.
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