|| H. J. Round, "A note on carborundum," Electrical world, 49, 309 (1907).|
 J. N. Holonyak and S. F. Bevacqua, "Coherent (visible) light emission from GaAs1 - xPx junctions," Applied Physics Letters, 1 (4), 82-83 (1962).
 J. I. Pankove, "Luminescence in GaN," Journal of Luminescence, 7, 114-126 (1973).
 H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer," Applied Physics Letters, 48 (5), 353-355 (1986).
 S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, "Thermal Annealing Effects on P-Type Mg-Doped GaN Films," Japanese Journal of Applied Physics, 31 (Part 2, No. 2B), L139 (1992).
 S. a. S. Nakamura, Masayuki and IWASA,Naruhito and NAGAHAMA,Shin-ichi and YAMADA,Takao and MUKAI,Takashi, "Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes," Japanese journal of applied physics. Pt. 2, Letters, 34 (00214922), L1332-L1335 (1995).
 T. Nishida, H. Saito, and N. Kobayashi, "Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN," Applied Physics Letters, 79 (6), 711-712 (2001).
 E. F. Schubert, "Light-Emitting Diodes," ( Cambridge University Press, Cambridge, 2003).
 S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, and J. K. Sheu, "Nitride-based LEDss with an SPS Tunneling contact layer and an ITO transparent contact," IEEE Photonics Technology Letters, 16 (4), 1002-1004 (2004).
 K. M. Uang, S. J. Wang, S. L. Chen, C. K. Wu, S. C. Chang, T. M. Chen, and B. W. Liou, "High-power GaN-based light-emitting diodes with transparent indium zinc oxide films," Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, 44 (4B), 2516-2519 (2005).
 C. H. Kuo, C. L. Yeh, P. H. Chen, W. C. Lai, C. J. Tun, J. K. Sheu, and G. C. Chi, "Low operation voltage of nitride-based LEDss with Al-doped ZnO transparent contact layer," Electrochemical and Solid State Letters, 11 (9), H269-H271 (2008).
 M. R. Krames, M. Ochiai-Holcomb, G. E. Hofler, C. Carter-Coman, E. I. Chen, I. H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J. W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, "High-power truncated-inverted-pyramid (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes exhibiting > 50% external quantum efficiency," Applied Physics Letters, 75 (16), 2365-2367 (1999).
 D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, "Enhanced output power of near-ultraviolet InGaN-GaN LEDss grown on patterned sapphire substrates," Ieee Photonics Technology Letters, 17 (2), 288-290 (2005).
 D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, R. H. Horng, Y. S. Yu, and M. H. Pan, "Fabrication of pyramidal patterned sapphire substrates for high-efficiency InGaN-based light emitting diodes," Journal of the Electrochemical Society, 153 (8), G765-G770 (2006).
 C. C. Wang, H. Ku, C. C. Liu, K. K. Chong, C. I. Hung, Y. H. Wang, and M. P. Houng, "Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure," Applied Physics Letters, 91 (12), - (2007).
 T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Applied Physics Letters, 84 (6), 855-857 (2004).
 C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, "Improved light-output and electrical performance of InGaN-based, light-emitting diode by microroughening of the p-GaN surface," Journal of Applied Physics, 93 (11), 9383-9385 (2003).
 J. Y. Kim, M. K. Kwon, I. K. Park, C. Y. Cho, S. J. Park, D. M. Jeon, J. W. Kim, and Y. C. Kim, "Enhanced light extraction efficiency in flip-chip GaN light-emitting diodes with diffuse Ag reflector on nanotextured indium-tin oxide," Applied Physics Letters, 93 (2), - (2008).
 C. H. Kuo, H. C. Feng, C. W. Kuo, C. M. Chen, L. W. Wu, and G. C. Chi, "Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN," Applied Physics Letters, 90 (14), - (2007).
 K. Bao, X. N. Kang, B. Zhang, T. Dai, C. Xiong, H. Ji, G. Y. Zhang, and Y. Chen, "Improvement of light extraction from patterned polymer encapsulated GaN-based flip-chip light-emitting diodes by imprinting," Ieee Photonics Technology Letters, 19 (21-24), 1840-1842 (2007).
 S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei, and J. K. Sheu, "Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography," Applied Physics Letters, 91 (1), - (2007).
 K. J. Byeon, S. Y. Hwang, and H. Lee, "Fabrication of two-dimensional photonic crystal patterns on GaN-based light-emitting diodes using thermally curable monomer-based nanoimprint lithography," Applied Physics Letters, 91 (9), - (2007).
 T. N. Oder, K. H. Kim, J. Y. Lin, and H. X. Jiang, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Applied Physics Letters, 84 (4), 466-468 (2004).
 J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, M. G. Craford, J. R. Wendt, J. A. Simmons, and M. M. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Applied Physics Letters, 84 (19), 3885-3887 (2004).
 H. Ichikawa and T. Baba, "Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal," Applied Physics Letters, 84 (4), 457-459 (2004).
 A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, and L. A. Kolodziejski, "Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode," Applied Physics Letters, 78 (5), 563-565 (2001).
 D. H. Kim, C. O. Cho, Y. G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q. H. Park, "Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns," Applied Physics Letters, 87 (20), - (2005).
 H. K. Cho, S. K. Kim, D. K. Bae, B. C. Kang, J. S. Lee, and Y. H. Lee, "Laser Liftoff GaN Thin-Film Photonic Crystal GaN-Based Light-Emitting Diodes," Ieee Photonics Technology Letters, 20 (21-24), 2096-2098 (2008).
 W. N. Ng, C. H. Leung, P. T. Lai, and H. W. Choi, "Photonic crystal light-emitting diodes fabricated by microsphere lithography," Nanotechnology, 19 (25), - (2008).
 K. Piglmayer, R. Denk, and D. Bauerle, "Laser-induced surface patterning by means of microspheres," Applied Physics Letters, 80 (25), 4693-4695 (2002).
 C. L. Lin, P. H. Chen, C. H. Chan, C. C. Lee, C. C. Chen, J. Y. Chang, and C. Y. Liu, "Light enhancement by the formation of an Al oxide honeycomb nanostructure on the n-GaN surface of thin-GaN light-emitting diodes," Applied Physics Letters, 90 (24), - (2007).
 Y. Kane, "Numerical solution of inital boundary value problems involving maxwell's equations in isotropic media," IEEE Trans. Antennas Propagat., 14 (3), 302-307 (1966).
 C. C. Chen, T. Pertsch, R. Iliew, F. Lederer, and A. Tunnermann, "Directional emission from photonic crystal waveguides," Optics Express, 14 (6), 2423-2428 (2006).
 H. K. Chiu, F. L. Hsiao, C. H. Chan, and C. C. Chen, "Compact and low-loss bent hollow waveguides with distributed Bragg reflector," Optics Express, 16 (19), 15069-15073 (2008).
 F. L. Hsiao, C. H. Chan, C. C. Chen, and K. C. Hsu, "Acoustic resonant leaky mode effects," Applied Physics Letters, 94 (4), - (2009).
 欒丕綱、陳啟昌, "光子晶體 - 從蝴蝶翅膀到奈米光子學," (五南圖書出版股份有限公司, 2006).
 J. A. E. Wasey and W. L. Barnes, "Efficiency of spontaneous emission from planar microcavities," Journal of Modern Optics, 47 (4), 725-741 (2000).
 C. H. Chan, C. C. Chen, C. K. Huang, W. H. Weng, H. S. Wei, H. Chen, H. T. Lin, H. S. Chang, W. Y. Chen, W. H. Chang, and T. M. Hsu, "Self-assembled free-standing colloidal crystals," Nanotechnology, 16 (9), 1440-1444 (2005).
 C. K. Huang, C. H. Chan, C. Y. Chen, Y. L. Tsai, C. C. Chen, J. L. Han, and K. H. Hsieh, "Rapid fabrication of 2D and 3D photonic crystals and their inversed structures," Nanotechnology, 18 (26), - (2007).