博碩士論文 963203001 詳細資訊




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姓名 黃晧庭(Hao-Ting Huang)  查詢紙本館藏   畢業系所 機械工程學系
論文名稱 以矽化鎳為催化劑成長奈米碳管機制之研究
(Study of growth mechanism of CNTs by the catalyst of nickel silicide)
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摘要(中) 本論文應用Metal-RTA (金屬快速熱退火)製程使 (Bottom) p-Si/Silicon dioxide/Poly-Si/Ni/Metal lead (Top)多層催化劑系統,催化金屬鎳(3, 7 nm Ni)薄膜與不同厚度多晶矽(10 nm、25 nm、35 nm Poly-Si)薄膜反應形成不同相的矽化鎳(NiSix),接著使用Thermal CVD (熱化學氣相沉積法)成長奈米碳管,研究不同相的矽化鎳與其催化成長出之奈米碳管性質的關聯性,並與以鎳為催化劑所成長之奈米碳管作為對照組比較。進一步製作奈米碳管二極、三極元件。
因為成長的過程中相變持續變化的關係,矽化鎳的相與奈米碳管的關係並沒有被觀察到。使用鎳所成長出來的奈米碳管直徑比以使用矽化鎳所成長出來的奈米碳管直徑來的大。由製備出來的奈米碳管元件,量測其電性,可知道本實驗所成長出來的奈米碳管皆為金屬性奈米碳管。
摘要(英) In this thesis, the rapid thermal annealing (RTA) process was applied on (Bottom) p-Si/Silicon dioxide/Poly-Si/Ni/Metal lead (Top) for the reaction of nickel catalytic film (7 nm) with poly-silicon films (10 nm、25 nm、35 nm) to form nickel silicide (NiSix) of different phases. Thermal chemical vapor deposition (CVD) method was followed to grow carbon nanotubes (CNTs) by Ni catalyst from Ni or nickel silicide film. We study the correlation between NiSix phase and CNT property and compare with CNTs from Ni catalyst. Growth of self-aligned carbon nanotubes was used to fabricate lateral CNT diode and triode devices.
Due to the phase change of NiSix during CNT growth, no apparent correlation between NiSix phase and CNT property was found. The diameters of CNTs grown from Ni catalyst are larger than those of CNTs grown from NiSix catalyst. Linear I-V characteristics indicated the metallic property of the bridged CNTs.
關鍵字(中) ★ 快速熱退火
★ 催化金屬
★ 矽化鎳
★ 奈米碳管
★ 奈米碳管元件
關鍵字(英) ★ CNT device
★ carbon nanotube
★ nickel silicide
★ catalytic metal
★ Rapid thermal annealing
論文目次 摘 要 i
Abstract ii
目 錄 iii
表 目 錄 vi
圖 目 錄 vii
第一章 緒論 1
1-1 前言 1
1-2 研究動機與目的 2
1-3 文獻回顧 5
第二章 奈米碳管的介紹 9
2-1 奈米碳管的起源 9
2-2 奈米碳管的結構及電學性質 12
2-3 奈米碳管之成長機制 15
2-4 奈米碳管之合成技術 18
2-5 奈米碳管之特性與應用 23
第三章 實驗方法與設備 27
3-1 實驗流程 28
3-2 製程設備與量測設備 30
3-2-1 製程設備 30
3-2-2 量測設備 34
3-3 試片製備 36
3-3-1 Control sample製備 37
3-3-2 NiSix sample製備 38
3-4 元件製備 41
3-4-1 以Ni為催化劑之元件 42
3-4-2 NiSix之元件(35 nm Poly-Si) 44
3-4-3 NiSix之元件(3~5 nm Poly-Si) 46
3-5 元件設計與光罩 47
3-6 Thermal CVD 成長奈米碳管之步驟 51
3-7 電場施加方式 52
3-8 奈米碳管品質的分析 53
第四章 結果與討論 55
4-1 不同Poly-Si厚度對奈米碳管成長影響 55
4-1-1 片電阻之改變 55
4-1-2 NiSix的相變化 58
4-1-3 Raman的奈米碳管石墨化分析 60
4-1-4 SEM分析 63
4-1-5 TEM分析 64
4-1-6 DES分析 68
4-2 N2流量對於奈米碳管成長的影響 70
4-2-1 Raman分析 70
4-2-2 SEM與TEM分析 70
4-2-3 EDS分析 71
4-3 Ni厚度對於奈米碳管成長的影響 72
4-4 電場對於奈米碳管成長的影響 74
4-4-1 IV量測 74
4-4-1-1 以Ni為催化劑之元件 74
4-4-1-2 以NiSix為催化劑之元件(35 nm Poly-Si) 76
4-4-1-3 以NiSix為催化劑之元件(3~5 nm Poly-Si) 80
4-4-2 電阻及接觸電阻之計算 81
第五章 結論 84
參考文獻 86
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指導教授 黃豐元(Fuang-Yuan Huang) 審核日期 2009-7-16
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