奈米碳管成長於新穎矽奈米結構之場發射特性

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郭昌容(Chang-Jung Kuo) 查詢紙本館藏

畢業系所

化學工程與材料工程學系

論文名稱

奈米碳管成長於新穎矽奈米結構之場發射特性
(Field emission properties of carbon nanotubes grown on novel silicon nanostructures)

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摘要(中)

本實驗利用E-beam電子束直寫系統在六吋矽晶圓上定義各種不同間距之奈米柱，隨後經過顯影及蝕刻等技術，製作出不同間距的柱子，並利用掃描式電子顯微鏡觀察其樣貌。在確定其間距無誤後，以真空電性量測系統測量其場發射性質。根據實驗結果發現，柱子在不同間距下之場發射性質隨著間距越大，其場發射性質會漸漸提升，但是過密之柱子，場發射電之電流密度相對之下，過於微小，之後利用高密度電漿化學氣相沉積系統在低溫下介由通入氫氣、氬氣等，使氫電漿均勻蝕刻在六吋矽晶圓不同的間距的柱子上使其成為奈米草結構，目的是使不同間距柱子能夠更佳的銳化，同樣的經過真空電性量測系統之測量，我們發現，在蝕刻奈米草結構之後，對於此雙層結構之場發射性質的改善並不顯著，且其效果還未達到單純奈米碳管之場發射能力，我們更進一步要在此雙層結構上成長奈米碳管，首先利用F13TCS, E-gun電子束蒸鍍7 nm Ni, 以及CHF3電漿等處理，以酒精為碳源成長奈米碳管，經過掃描式電子顯微鏡觀察，我們發現，以金屬鎳成長奈米碳管之方式能夠使碳管均勻分佈在奈米草之表面，對進一步的場發射量測來說較不容易造成誤差。我們以此為基板，利用熱化學氣相沉積系統在不同間距之間距奈米柱上生長奈米碳管，觀察不同結構之場發射特性。
我們發現製造出不同間距之碳管生長於間距奈米柱蝕刻奈米草之後，整體結構之場發射能力，比奈米碳管還要好，而我們所創造之一系列結構亦符合F-N方程式，顯示其發射電流是由場發射機制所致。

摘要(英)

Leica E-beam lithography and etching were used to create nanopillars array with different spaces from 2 ?m to 100 ?m. We used scanning electronic microscope to observe the morphology of the pillars and check the distance between the pillars. We measured the field emission characteristic and found that the field emission had lower turn-on field with increasing distance. Comparing to other samples with different distance, we found that 2 ?m pillar had the lowest current density.
We also observed that the nanopillars did not exceed carbon nanotubes in the field emission performance. To improve the field emission performance, we used high density plasma chemical vapor deposition system to create another nanostructure on nanopillar. RF power was used to generate hydrogen and argon plasma to evenly etch the nanopillar on 6 inch wafer. Through this process, we got nanograss, which may be the smallest silicon nanostructure in the world. This two-tier nanograss-on-nanopillar structure had better characteristic of field emission than nanopillar array, but still not exceeded carbon nanotubes.
Finally we tried to grow carbon nanotubes on top of this two-tier nanostructure. We adopted three methods to grow carbon nanotubes on nanograss, which were F13TCS evaporation, 7 nm nickel coating, and CHF3 plasma treatment. The scanning electronic microscope showed that only the sputtering methods would lead to uniform carbon nanotubes on the nanograss, so we chose the sputtering as the growing methods for catalyst layer. After we grew carbon nanotubes on the two-tier nanostructures, we found that their field emission characteristic exceeded carbon nanotube successfully. F-N plot of all the structure shows that the measured current originated from the tunneling mechanism.

關鍵字(中)

★ 場發射
★ 奈米碳管

關鍵字(英)

★ Field emission
★ CNT

論文目次

碩博士論文電子檔授權書……………………………………………..…………….II
論文指導教授推薦書………………………………………………………………..III
論文口試委員審定書…………………………………….……………….………….V
中.文摘要…………………………………………………………………..…………V
英文摘要……………………………………………………………………………VII
誌謝……………………………………………………………………………..….VIII
圖目錄…………………………………………………………………………..……II
表目錄…………………………………………………………………………….XVII
第一章緒論…………………………………………………………………………1
1-1 前言……………………………………………………………………………..1
1-2 研究動機………………………………………………………………………..9
第二章理論與文獻回顧…………………………………………………………..12
2-1 準直矽奈米結構形成機制……………………………………………………12
2-2 奈米碳管結構與特性…………………………………………………………15
2-3 奈米碳管製備方法……………………………………………………………20
2-4 順向成長原理與方法…………………………………………………………23
2-4.1. 纖維間凡得瓦力…………………………………………………………23
2-4.2. 模板輔助成長……………………………………………………………24
2.4.3. 電場………………………………………………………………………24
2-5 奈米碳管氣相成長機構………………………………………………………27
2-5.1. 碳原子的擴散路徑：……………………………………………………27
2-5.2. 催化劑中碳原子的擴散驅動力…………………………………………29
2-5.3. 成長起源：頂部成長模式及底部成長模式……………………………29
2-5.4. 氫氣對奈米碳管生長的影響……………………………………………33
2-6 奈米結構上生長奈米碳管……………………………………………………33
2-6.1 金屬催化劑沉積的方法…………………………………………………33
2-6.2 於親水性奈米草上生長奈米碳管………………………………………36
2-6.3 以PTFE 薄膜生長奈米碳管 ……………………………………………38
2-7 電子場發射特性………………………………………………………………40
2-7.1 場發射增強因子β……………………………………………………….42
2-8 場發射如今之發展與比較…………………………………………………....44
第三章實驗方法與流程………………………………………………………..…47
3-1 實驗材料與設備………………………………………………………………47
3-1.1. 基版材料與化學品………………………………………………………47
3-1.2. 製程設備…………………………………………………………………48
3-1.3. 分析儀器…………………………………………………………………49
3-2 實驗流程………………………………………………………………………49
3-3 實驗步驟……………………………………………………………………….50
3-3.1 製作多種間距之奈米柱………………………………………………….50
3-3.2 準直矽奈米草的製作…………………………………………………….52
3-3.3 成長奈米碳管之催化劑製程…………………………………………….52
3-3.4 成長奈米碳管之生長…………………………………………………….53
3-3.5 奈米碳管與基板的分析………………………………………………….54
3-3.6 場發射載台之架設……………………………………………………….54
3-3.7 真空電性量測步驟…………………………………………………….…56
第四章結果與討論…………………………………………………………………57
4-1 奈米柱之分析……………………………………………………………….…57
4-1.1 奈米柱的表面形貌……………………………………………………….57
4-4.1. 奈米柱的電性量測結果………………………………………………….61
4-4.2. 奈米柱場發射之結果與討論…………………………………………….64
4-2 奈米柱上蝕刻奈米草之分析………………………………………………….66
4-2.1 奈米柱上蝕刻奈米草之表面形貌……………………………………….66
4-2.2 米柱上蝕刻奈米草之電性量測………………………………………….68
4-2.3 奈米柱上蝕刻奈米草之結果與討論…………………………………….71
4-3 碳管成長於奈米柱上蝕刻奈米草之分析…………………………………….72
4-3.1 使用不同方式成長奈米碳管之結果…………………………………….72
4-3.2 碳管成長於奈米柱上蝕刻奈米草之分析………………….……………76
4-3.3 碳管成長於奈米柱上蝕刻奈米草之電性量測…………….……………80
4-4 不同間距結構之電性比較…………………………………………….………83
4-5 FOWLER-NORDHEIM 方程式之計算…………………….…………………90
第五章結論………………………………………………………………….……94
參考文獻………………………………………………………………….…………96

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指導教授

謝健、周正堂
(Jiann Shieh、Cheng-Tung Chou)

審核日期

2009-7-22

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