摘要(英) |
This study focuses on the electrical and optical properties of Gd-doped AZO transparent conductive thin film, and discuss the difference in doping effect on AZO (ZnO:Al2O3=98 wt.% : 2 wt.%).
In this experiment, we use the co-sputter system to deposit the thin film, and using the multilayer structure (AZO/Gd/AZO/Gd/AZO) to achieve the Gd-doped AZO process. A multilayer of five layers was deposited on the quartz substrate, by altering the Gd layer thickness we could get different doping contents on AZO. After deposition, the proper annealing process is needed. Using the Hall Measurement to measure the electrical property, the UV/VIS Spectrophotometer to measure the transmittance, the refractive index by Ellipsometer and the X-ray to analyze the structure, then we could know whether Gd-doped AZO performs better than un-doped AZO. The Figure of Merit helps us to evaluate the application of the films.
AZO thin films could get over than 85% transmittance in near UV region, and after doing 400 ℃ heat treatment in vacuum ambient, the resistivity can be obtained to 1.3×10-2 Ω-cm. After Gd dope into AZO, the absorption edge shift results from the Burstein-Moss effect, and we could get the relative low resistivity by 10 wt. % Gd-doped AZO after 200 ℃ heat treatment in vacuum ambient. We could get the best FOM by 10 wt. % Gd-depod AZO.
From this research, Gd-doped AZO thin film has high transmittance and better conductivity, so it might be a suitable candidate to replace ITO in the application of transparent conductive layer (TCL) in GaN-base LED.
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參考文獻 |
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