博碩士論文 963206002 詳細資訊




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姓名 黃晴澤(Ching-tse Huang)  查詢紙本館藏   畢業系所 環境工程研究所
論文名稱 以非熱電漿結合吸附劑處理C3F8之研究
(Removal of C3F8 via the Combination of Nonthermal Plasma and Adsoption)
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摘要(中) C3F8近年來已逐漸取代CF4及C2F6成為高科技產業CVD腔體清洗之主要清洗氣體,其具高化學穩定性及強紅外線吸收能力,乃京都議定書明訂管制之溫室效應氣體之ㄧ。目前全氟化物主流處理技術為燃燒法和觸媒法,兩者之缺點為無污染物排放期間仍須維持相當溫度,耗能較高並有發生工安意外之虞。非熱電漿技術具快速啟動且無須維持高溫等特性,為極具應用前景之新興技術,其技術瓶頸為污染物去除之能量效率和產物選擇性尚有改善空間。如整合吸附劑物理吸附作用延長污染物停留時間、增加污染物濃度與非熱電漿於室溫即可啟動並迅速反應等特性,可同時改善污染物去除之能量效率及產物選擇性。本研究利用吸附劑結合介電質放電(DBD)處理C3F8,藉由吸附劑之物理吸附延長污染物停留時間,探討吸附劑之吸附效能、電漿處理對吸附劑之影響、吸附劑於電漿放電中對去除率及產物選擇性之影響。研究結果顯示,以吸附效果而言,球狀活性碳為最佳,推測原因為吸附劑表面之含氧官能基會對C3F8吸附效能造成影響;吸附劑經放電處理後,造成BET比表面積下降且使平均孔洞尺寸上升,而表面含氧官能基數量則有所增加。於本研究中,C3F8之轉化率隨著氧氣含量增加而提昇,但過量之氧氣將不利於轉化C3F8;在相同比能量密度下,吸附劑置入於電漿系統可改善其去除效率及產物選擇性,推論為吸附劑可延長C3F8之停留時間,可增加電子與C3F8之碰撞機率。本研究證實吸附劑置入有助於非熱電漿技術去除C3F8,深具發展潛力。
摘要(英) Perfluorinated compounds (PFCs) are widely used in semiconductor industry for chemical vapor deposition (CVD) and dry etching. PFCs have strong apacities on infrared rays absorption, they will aggravate global warming once emitted into the atmosphere. Among the diverse strategies for PFCs removal, the abatement techniques is still the most available one. Combustion and catalytic oxidation are commonly used approaches for reducing PFC emissions. However, relatively high fuel cost and potential poisoning of catalyst limit their further application. This study investigates the effectiveness of plasma combined with adsorbent for C3F8 removal. The experimental results indicate Bead-shape activated carbon has the best adsorption capacity, the reason supposed to be the oxygen functional groups at adsorbent surface would affect the adsorption capacity of C3F8. Adsorbent after plasma treatment will decrease BET surface area and increase average pore diameter, and the amount of oxygen functional groups at surface increase as well. The removal efficiency of C3F8 increased with application of oxygen content. However, removal efficiency of C3F8 was found to decrease if more than 2% of oxygen was applied. The removal efficiency and product selectivity of C3F8 achieved with plasma combined with adsorbent were significantly higher than those without adsorbent of might result from the fact that adorbent can extend the retention time of C3F8. Experimental results indicate that plasma combined with adsorbent for C3F8 removal was technically feasible.
關鍵字(中) ★ 非熱電漿
★ C3F8
★ 吸附劑
★ 介電質放電
★ 停留時間
關鍵字(英) ★ removal efficiency.
★ PFCs
★ plasma
★ adsorption
★ adsorbent
論文目次 摘要 I
Abstract II
圖目錄 V
表目錄 VII
第一章 前言 1
1-1 研究緣起 1
1-2 研究內容 2
第二章 文獻回顧 3
2-1全氟化物之排放來源及其對環境之危害性 3
2-2 C3F8之物化特性與電漿反應 5
2-2-1 C3F8之物化特性 5
2-2-2 C3F8在電漿中之反應機制 7
2-3全氟化物現行減量方法 9
2-4電漿 15
2-4-1電漿生成原理 15
2-4-2電漿種類 16
2-4 氣相吸附及吸附劑 24
2-4-1氣相吸附原理 24
2-4-2吸附劑種類 27
2-4-3影響吸附之因子 29
2-4-4貫穿曲線 33
2-4-5等溫吸附曲線 34
第三章 實驗方法與設備 38
3-1系統介紹 38
3-2實驗所用吸附劑 40
3-3實驗設備 41
3-3-1氣體供應系統 41
3-3-2實驗參數控制系統 41
3-3-3吸附床反應器 42
3-3-4脫附設備 42
3-3-5介電質放電系統 42
3-3-6反應物及產物分析系統 44
3-4實驗方法 45
第四章 結果與討論 53
4-1挑選合適吸附劑 53
4-1-1 BET比表面積及孔洞尺寸 53
4-1-2 C3F8之吸附實驗 54
4-1-3小結 57
4-2 C3F8之吸附/脫附實驗 58
4-2-1進流濃度對吸附劑之飽和吸附量影響 58
4-2-2脫附/再生實驗 60
4-2-3小結 64
4-3電漿結合吸附劑實驗 64
4-3-1氧氣添加濃度對於C3F8去除效率的影響 64
4-3-2電漿結合吸附劑及非吸附劑之轉化效果 66
4-3-3最終產物鑑定 68
4-3-4 C3F8未經處理及經非熱電漿結合吸附劑之比較 72
4-3-5小結 73
4-4 電漿放電對吸附劑表面特性影響 74
4-4-1 BET比表面積及孔洞尺寸 74
4-4-2 SEM分析 75
4-4-3表面官能基 79
4-4-4 C3F8之吸附測試 81
4-4-5小結 83
第五章 結論與建議 84
5-1 結論 84
5-2 建議 85
參考文獻 86
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網路資料:
行政院原子能委員會核能研究所, “PFCs排放控制處理技術之對照表,”
http://www.iner.gov.tw/news/c-service/change/03.htm (download on 2009/3/23)
指導教授 張木彬(Moo Been Chang) 審核日期 2009-7-23
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