利用新穎奈米遮罩製備低維度矽鍺奈米結構及其光電性質之研究

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姓名

吳伯倫(Bo-Lun Wu) 查詢紙本館藏

畢業系所

材料科學與工程研究所

論文名稱

利用新穎奈米遮罩製備低維度矽鍺奈米結構及其光電性質之研究
(Fabrication and Optoelectronic Properties ofLow-Dimensional SiGe Nanostructures by UsingSelf-assembled Nanomasks)

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摘要(中)

本研究中，利用高密度鍺量子點於矽基材上作為奈米遮罩以進行濕式選擇性蝕刻並製備出大面積矽基奈米尖端結構，蝕刻過程中，鍺奈米遮罩也緩慢地被縮小為尺寸更小之鍺核(Ge core)結構，其鍺量子點之尺寸也決定著所製備出之矽基奈米尖端結構之頂端尖度(apex sharpness)，其所製備出之矽基奈米尖端將有良好的抗反射性質及優異之場發射性質，且其矽基奈米尖端之高場發射增強因子是源於高密度奈米尖端結構及其頂端之尖度，其將有助於電子穿越能障發射至真空之能力。
此外，我們也利用了單層聚苯乙烯奈米球陣列為遮罩搭配反應性離子蝕刻(reactive ion etching)技術製作出高密度且有序之矽鍺奈米柱結構，其矽鍺奈米柱結構之形貌將可藉由蝕刻氣體之組成、蝕刻功率以及蝕刻時間來控制，其所製作出之高密度有序矽鍺奈米柱結構具有低反射率之特性以及特定波段之光致發光(photoluminescence)增強能力。
利用奈米球微影術(nanosphere lithography)搭配乾式蝕刻及鍺量子點遮罩之濕式蝕刻將成功的製備出各式各樣形貌之矽基或矽鍺奈米結構，再利用AFM、SEM及TEM等顯微鏡來觀察其形貌之改變，並量測此些奈米結構之場發射、光致發光及反射率等性質，以得知其奈米結構之形貌對於光電性質之影響。本研究之技術對於製作矽鍺奈米結構將是低成本且具高效率的。

摘要(英)

In the present study, large-area Si nanotips were fabricated by selective chemical etching of self-assembled Ge quantum dots on Si. Taking advantage of the relatively low etching rate, high-density Ge dots act as virtual nanomasks for the underlying Si substrate. During selective chemical etching, Ge nanomasks shrink into the small Ge-core islands, which determine the apex sharpness of the resulting Si pyramidal tips. The Si pyramidal tips exhibited excellent antireflective and electron field emission characteristics compared to as-grown Ge islands. The high field enhancement factor of Si nanotips can be attributed to high tip density, nanoscale apex and the well controlled spacing between the nanostructures.
Besides, in our study, high-density ordered SiGe nanorods were fabricated by reactive ion etching of monolayer polystyrene arrays. The morphology of the SiGe nanorods were controlled by variation of gas composition, power and duration of the dry etching. The fabricated nanorods exhibited low reflectance at 300nm-2000nm and excellent photo- luminescence property.
By using nanosphere lithography with dry etching and wet etching of Ge masks, various morphologies of SiGe nanostructures were successfully fabricated. The morphology evolution, size and height of produced nanostructures have been investigated by AFM, SEM, TEM. We also measured field-emission, PL and reflectance properties of the nanostructures. The etching techniques in our study are really low-cost and efficient for fabricating various shapes of SiGe nanostructures.
II

關鍵字(中)

★ 矽鍺
★ 反射率
★ 奈米柱
★ 微影
★ 奈米球
★ 量子點

關鍵字(英)

★ polystyrene
★ SiGe
★ nanosphere
★ quantum dots
★ lithography
★ nanorods
★ reflectivity

論文目次

目錄
摘要………………………………………………………………………I
Abstract…………………………………………………………………II
致謝………………………………………………………………………III
目錄………………………………………………………………………IV
第一章簡介 1
1-1前言 1
1-2 自組裝技術 4
1-2-1 鍺量子點自組裝技術 4
1-2-2 奈米球自組裝技術 5
1-3 微影技術 7
1-4 蝕刻技術 9
1-4-1 濕式蝕刻 9
1-4-2 乾式蝕刻 10
1-5 場發射原理 12
1-6 光致發光原理 13
1-7 光反射率原理 13
1-8 研究動機 15
參考文獻 16
第二章實驗步驟 19
2-1 以自組裝鍺量子點奈米遮罩製作高效率矽基場發射源 19
2-1-1 基材前處理 19
2-1-2 大面積矽基奈米尖端結構製備 20
2-2 以聚苯乙烯奈米球為遮罩製備出矽鍺奈米柱陣列 20
2-2-1 奈米球溶液配製 21
2-2-2 自組裝聚苯乙烯奈米球陣列 21
2-2-3 奈米球縮小製程 22
2-2-4 矽基及矽鍺奈米柱陣列製備 22
2-3 分析及性質量測 22
2-3-1 原子力顯微鏡 22
2-3-2 穿透式電子顯微鏡 23
2-3-3 掃瞄式電子顯微鏡 23
2-3-4 場發射量測系統 24
2-3-5 光譜儀 24
2-3-6 光致發光 24
第三章結果與討論 25
3-1 以自組裝鍺量子點遮罩製備矽基奈米尖端結構 25
3-1-1 自組裝鍺量子點成長 25
3-1-2 矽基奈米尖端 25
3-1-3 矽基奈米尖端之場發射性質量測 31
3-1-4 矽基奈米尖端之反射率量測 32
3-2 以自組裝聚苯乙烯奈米球製備有序矽基奈米結構 33
3-2-1 聚苯乙烯奈米球基板 34
3-2-2 聚苯乙烯奈米球尺寸縮小技術 34
3-2-3 矽基奈米柱陣列 38
3-2-3-1 蝕刻功率 38
3-2-3-2 氧通量 40
3-3 以自組裝排列聚苯乙烯奈米球製備有序矽鍺超晶格奈米柱陣列 42
3-3-1 20層矽鍺超晶格奈米柱陣列 42
3-3-1-1 20層矽鍺超晶格奈米柱陣列反射率量測 45
3-3-2 縮小遮罩所製備之20層矽鍺超晶格奈米柱陣列及其之光致發光性質 46
3-3-3 50層矽鍺超晶格奈米柱陣列 48
3-3-3-1 50層矽鍺超晶格奈米柱陣列反射率量測 50
3-3-3-2 50層矽鍺超晶格奈米柱陣列之光致發光性質 52
3-3-3-3 50層矽鍺超晶格奈米柱陣列之拉曼分析 53
3-3-4 縮小遮罩所製備之50層矽鍺超晶格奈米柱陣列及其之光致發光性質 54
參考文獻 58
第四章結論 59
4-1 結論 59
4-2 未來之應用 62

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指導教授

李勝偉(Sheng-Wei Lee)

審核日期

2009-7-24

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