博碩士論文 963303018 詳細資訊


姓名 趙冠翔(CHAO KUAN)  查詢紙本館藏   畢業系所 機械工程學系在職專班
論文名稱 塗佈奈米銀p型矽(100)在NH4F/H2O2 水溶液中之電化學蝕刻行為
(Electrochemical etch of p-Si(100) dispersed with nano-Ag particles in the NH4F/H2O2 solution)
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摘要(中) 本論文之內容主要探討奈米銀顆粒塗佈於p-型矽(100)單晶上,
在含氟化銨(Ammonium fluoride, NH4F)和過氧化氫(hydrogen peroxide,
H2O2)的混合溶液中,經電化學蝕刻後的孔洞形貌特性研究。蝕刻步
驟先採用陽極動態極化法,在混合溶液中定義出適當之蝕刻電位,以
利進行定電位蝕刻,進而研究蝕刻孔洞的形貌差異。
實驗結果顯示,利用電化學蝕刻法,在含氟化銨與過氧化氫混合
蝕液中,可將塗佈奈米銀顆粒的矽晶表面蝕刻出深孔洞,此蝕刻速率
隨著過氧化氫濃度的增加而提高。藉由電化學量測法,可得知:蝕刻
液溫度增加、或過氧化氫的濃度提高時,此系統之腐蝕電位往負電位
移動,且腐蝕電流增加,加速蝕刻速率,當溫度達60oC 時有最高的
蝕刻速率,藉由阿瑞尼士方程式可以求出其系統的蝕刻之活化能為
48.4 KJ/mol。
摘要(英) The aim of this work was to prepare porous silicon(PS) by
electrochemical etch of p-type silicon (100) coated with nano-Ag
particles in an aqueous solution of ammonium fluoride mixed with
hydrogen peroxide. DC potentiodynamic polarization was conducted and
the anodic polarization curves were analyzed to find the optimal
potentials for potentiostatic preparation of the PS.
The results displayed that deep holes were produced
electrochemically on the silicon dispersed with nano-Ag particles in the
solution containing ammonium fluoride and hydrogen peroxide. The
corrosion potential shifts to active direction and the etching rate increases
with increasing the reaction temperature and the concentration of
hydrogen peroxide. The optimal temperature to obtain porous silicon was
at 60℃ to obtain the highest depth. The activation energy is estimated to
be 48.4 KJ/mol for the etching system by the Arrhenius plot.
關鍵字(中) ★ p-型(100)矽單晶
★ 電化學蝕刻
★ 氟化銨
關鍵字(英) ★ p-type(100) silicon
★ electrochemical etching
★ ammo
論文目次 中文摘要 i
英文摘要 ii
誌謝 iii
目錄 iv
表目錄 viii
圖目錄 x
第一章、簡介 1
1-1、研究背景 1
1-1-1 多孔矽及其應用 1
1-1-2 多孔矽的製作技術 1
1-2、研究目的 3
第二章、基礎原理與文獻回顧 5
2-1、半導體電化學理論 5
2-1-1 半導體材料電子能階 5
2-1-2 電解液的電子能階-絕對電極電位 5
2-1-3 半導體卅電解液界面 6
2-1-3-1 平衡狀態 6
2-1-3-2 平帶電位 8
2-2、多孔矽形成機制 8
2-2-1 矽在電解液中的電流-電壓(I-V)特性 9
2-2-2 矽的陽極溶解反應 10
2-2-3 多孔矽的形成模型 12
2-2-3-1 貝爾模型 12
2-2-3-2 擴散機制模型 14
2-2-3-3 Zhang 模型 17
2-2-3-4 Unagami 模型 19
2-2-4 電化學蝕刻製作多孔矽結構 21
2-3、觸媒催化反應 23
2-3-1 過氧化氫性質 23
2-3-2 觸媒反應原理 24
2-3-3 觸媒種類 25
2-3-4 觸媒金屬應用於矽蝕刻 25
2-4、活化能的測定 27
第三章、實驗方法與進行步驟 29
3-1 還原銀溶液配製 29
3-2 試片選擇 29
vi
3-3 試片前處理 29
3-4 實驗設備 30
3-5 蝕刻液選擇 31
3-6 蝕刻方法 31
3-7 表面形貌觀察 32
第四章、結果 33
4-1 蝕刻液特性 33
4-1-1 氟化銨系統pH 與導電度量測 33
4-1-2 氫氟酸系統pH 與導電度量測 33
4-2 塗佈銀溶液之試片 34
4-2-1 開路電位(OCP)量測 34
4-2-2 陽極動態極化曲線 35
4-2-3 濕式蝕刻與電化學蝕刻 35
4-3 未塗佈銀溶液之試片對照 38
4-3-1 開路電位(OCP)量測 38
4-3-2 陽極動態極化曲線 38
4-3-3 濕式蝕刻與電化學蝕刻 40
4-4 氫氟酸系統與文獻對照 41
4-4-1 開路電位(OCP)量測 42
4-4-2 陽極動態極化曲線 43
4-4-3 濕式蝕刻與電化學蝕刻 44
4-4-4 文獻對照-同步蝕刻之可能性 46
4-5 溫度變化對氟化銨系統之影響 47
4-5-1 開路電位(OCP)量測 47
4-5-2 陽極動態極化曲線 48
4-5-3 電化學蝕刻 49
4-5-4 活化能之計算 50
第五章、討論 51
5-1 蝕刻液特性與影響 51
5-2 塗佈銀溶液之試片 51
5-3 未塗佈銀溶液之試片 53
5-4 與文獻氫氟酸系統之比較 54
5-5 溫度變化對氟化銨系統之影響 55
第六章、結論 57
第七章、未來展望 59
參考文獻 60
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指導教授 林景崎(Lin, Jing-Chie) 審核日期 2009-8-17
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