參考文獻 |
[1] U. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, "A comprehensive review of ZnO materials and devices," Journal of Applied Physics, vol. 98, p. 041301, 2005.
[2] A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, "Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices," Applied Physics Letters, vol. 75, p. 980, 1999.
[3] T. Makino, C. H. Chia, N. T. Tuan, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, "Radiative and nonradiative recombination processes in lattice-matched (Cd,Zn)O/(Mg,Zn)O multiquantum wells," Applied Physics Letters, vol. 77, p. 1632, 2000.
[4] J. C. Sun, J. Z. Zhao, H. W. Liang, J. M. Bian, L. Z. Hu, H. Q. Zhang, X. P. Liang, W. F. Liu, and G. T. Du, "Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO∕p-ZnO:As∕GaAs structure," Applied Physics Letters, vol. 90, p. 121128, 2007.
[5] S. Chu, J. H. Lim, L. J. Mandalapu, Z. Yang, L. Li, and J. L. Liu, "Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes," Applied Physics Letters, vol. 92, 2008.
[6] I. T. Drapak, Semiconductors, vol. 2, p. 624, 1968.
[7] Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, "Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates," Applied Physics Letters, vol. 83, p. 4719, 2003.
[8] R. L. Hoffman, "ZnO-channel thin-film transistors: Channel mobility," Journal of Applied Physics, vol. 95, p. 5813, 2004.
[9] S. Y. Myong, S. J. Baik, C. H. Lee, W. Y. Cho, and K. S. Lim, "Extremely transparent and conductive ZnO:Al thin films prepared by photo-assisted metalorganic chemical vapor deposition (photo-MOCVD) using AlCl3(6H2O) as new doping material," Japanese Journal of Applied Physics, vol. 36, p. L1078, 1997.
[10] H. Y. Liu, V. Avrutin, N. Izyumskaya, M. A. Reshchikov, Ü. Özgür, and H. Morkoç, "Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma assisted MBE," physica status solidi (RRL) - Rapid Research Letters, vol. 4, p. 70, 2010.
[11] K. J. Kim and Y. R. Park, "Large and abrupt optical band gap variation in In-doped ZnO," Applied Physics Letters, vol. 78, p. 475, 2001.
[12] X. Li, H. Y. Liu, S. Liu, X. Ni, M. Wu, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, "InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide," physica status solidi (a), vol. 207, p. 1993, 2010.
[13] C. H. Kuo, C. L. Yeh, P. H. Chen, W. C. Lai, C. J. Tun, J. K. Sheu, and G. C. Chi, "Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer," Electrochemical and Solid-State Letters, vol. 11, p. H269, 2008.
[14] K. Iwata, P. Fons, A. Yamada, H. Shibata, K. Matsubara, K. Nakahara, H. Takasu, and S. Niki, "Bandgap engineering of ZnO using Se," physica status solidi (b), vol. 229, p. 887, 2002.
[15] S.-H. Wei and A. Zunger, "Giant and composition-dependent optical bowing coefficient in GaAsN Alloys," Physical Review Letters, vol. 76, p. 664, 1996.
[16] K. Maeda, M. Sato, I. Niikura, and T. Fukuda, "Growth of 2 inch ZnO bulk single crystal by the hydrothermal method," Semiconductor Science and Technology, vol. 20, p. S49, Apr 2005.
[17] J. Nause, "Cermet, Inc.," 2007.
[18] K.-K. Kim, J.-H. Song, H.-J. Jung, W.-K. Choi, S.-J. Park, and J.-H. Song, "The grain size effects on the photoluminescence of ZnO/α-Al2O3 grown by radio-frequency magnetron sputtering," Journal of Applied Physics, vol. 87, p. 3573, 2000.
[19] R. D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J. B. Halpern, M. G. Spencer, Y. X. Li, L. G. Salamanca-Riba, A. A. Iliadis, and K. A. Jones, "Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices," Applied Physics Letters, vol. 73, p. 348, 1998.
[20] Y. F. Chen, D. M. Bagnall, H. J. Koh, K. T. Park, K. Hiraga, Z. Q. Zhu, and T. Yao, "Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization," Journal of Applied Physics, vol. 84, p. 3912, 1998.
[21] Y. Liu, C. R. Gorla, S. Liang, N. Emanetoglu, Y. Lu, H. Shen, and M. Wraback, "Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD," Journal of Electronic Materials, vol. 29, p. 69, 2000.
[22] N. Takahashi, K. Kaiya, T. Nakamura, Y. Momose, and H. Yamamoto, "Growth of ZnO on sapphire (0001) by the vapor phase epitaxy using a chloride source," Japanese Journal of Applied Physics, vol. 38, p. L454, 1999.
[23] S.-H. Jeong, B.-S. Kim, and B.-T. Lee, "Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient," Applied Physics Letters, vol. 82, p. 2625, 2003.
[24] Y. R. Ryu, S. Zhu, J. D. Budai, H. R. Chandrasekhar, P. F. Miceli, and H. W. White, "Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition," Journal of Applied Physics, vol. 88, p. 201, 2000.
[25] A. Ohtomo, K. Tamura, K. Saikusa, K. Takahashi, T. Makino, Y. Segawa, H. Koinuma, and M. Kawasaki, "Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001) substrates," Applied Physics Letters, vol. 75, p. 2635, 1999.
[26] T. Minami, "Transparent conducting oxide semiconductors for transparent electrodes," Semiconductor Science and Technology, vol. 20, p. S35, 2005.
[27] A. Y. I. Ozgur U, Liu C, Teke A, Reshchikov M A, Dogan S, Avrutin V, Cho S.-J. and Morkoc, "A comprehensive review of ZnO materials and devices," Journal of Applied Physics, vol. 98, p. 041301-1, 2005.
[28] H. B. I. B. H. Choi, J. S. Song, and K. H. Yoon, Thin Solid Films, vol. 193, p. 712, 1990.
[29] T. M. A. Suzuki, T. Aoki, Y. Yoneyama, and M. Okuda, Jpn. J. Appl. Phys. Lett., vol. Part 2 38, p. L71, 1999.
[30] K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, "Correlation between photoluminescence and oxygen vacancies in ZnO phosphors," Applied Physics Letters, vol. 68, p. 403, 1996.
[31] D. C. Look, J. W. Hemsky, and J. R. Sizelove, "Residual native shallow donor in ZnO," Physical Review Letters, vol. 82, p. 2552-2555, 1999.
[32] S. Cox, E. Davis, S. Cottrell, P. King, J. Lord, J. Gil, H. Alberto, R. Vilão, J. Piroto Duarte, N. Ayres de Campos, A. Weidinger, R. Lichti, and S. Irvine, "Experimental Confirmation of the Predicted Shallow Donor hydrogen state in zinc oxide," Physical Review Letters, vol. 86, p. 2601, 2001.
[33] Y. S. Kim, Y. R. Park, D. Jung, K. C. Kim, S. J. Suh, and T. S. Park, "Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering," Journal of Electroceramics, vol. 23, p. 536, 2009.
[34] P. S. S. S. S. Shinde, C. H. Bhosale and K. Y. Rajpure, "Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films," J. Phys. D: Appl. Phys, vol. 41, p. 105109, 2008.
[35] M. Miki-Yoshida, F. Paraguay-Delgado, W. Estrada-Lopez, and E. Andrade, "Structure and morphology of high quality indium-doped ZnO films obtained by spray pyrolysis," Thin Solid Films, vol. 376, p. 99, 2000.
[36] T. Ben-Yaacov, T. Ive, C. G. Van de Walle, U. K. Mishra, J. S. Speck, and S. P. Denbaars, "Properties of In-Doped ZnO films grown by metalorganic chemical vapor deposition on GaN(0001) templates," Journal of Electronic Materials, vol. 39, p. 608, 2010.
[37] H. Karzel, W. Potzel, M. Kofferlein, W. Schiessl, M. Steiner, U. Hiller, G. M. Kalvius, D. W. Mitchell, T. P. Das, P. Blaha, K. Schwarz, and M. P. Pasternak, "Lattice dynamics and hyperfine interactions in ZnO and ZnSe at high external pressures," Physical Review B, vol. 53, p. 11425, 1996.
[38] M. N. Jung, J. H. Chang, E. S. Lee, T. I. Jeon, K. S. Gil, J. J. Kim, Y. Murakami, S. H. Lee, S. H. Park, H. J. Lee, T. Yao, and H. Makino, "Synthesis and investigation on the extrinsic carrier concentration of indium doped ZnO tetrapods," Journal of Alloys and Compounds, vol. 481, p. 649, 2009.
[39] K. P. Vijayakumar, P. M. R. Kumar, and C. S. Kartha, "Doping of spray-pyrolyzed ZnO thin films through direct diffusion of indium: Structural optical and electrical studies," Journal of Applied Physics, vol. 98, p. 023509, 2005.
[40] A. Gurlo, M. Ivanovskaya, A. Pfau, U. Weimar, and W. Gopel, "Sol-gel prepared In2O3 thin films," Thin Solid Films, vol. 307, p. 288, 1997.
[41] T. K. Gupta and W. D. Straub, "Effect of annealing on the ac leakage components of the ZnO varistor. I. Resistive current," Journal of Applied Physics, vol. 68, p. 845, 1990.
[42] O. Bamiduro, H. Mustafa, R. Mundle, R. B. Konda, and A. K. Pradhan, "Metal-like conductivity in transparent Al:ZnO films," Applied Physics Letters, vol. 90, p. 252108, 2007.
[43] B. Altshuler, D. Khmel’nitzkii, A. Larkin, and P. Lee, "Magnetoresistance and Hall effect in a disordered two-dimensional electron gas," Physical Review B, vol. 22, p. 5142, 1980.
[44] N. F. Mott, Conduction in Non-Crystalline Materials. Claderon: Oxford, 1993.
[45] V. Bhosle, A. Tiwari, and J. Narayan, "Electrical properties of transparent and conducting Ga doped ZnO," Journal of Applied Physics, vol. 100, p. 033713, 2006.
[46] I. S. C. Jun Hong Noh, Sangwook Lee, Chin Moo Cho, Hyun Soo Han, Jae-Sul An, Chae Hyun Kwak, Jin Yong Kim, Hyun Suk Jung, Jung-Kun Lee, and Kug Sun Hong, Phys. Status Solidi A, vol. 206, p. 2133, 2009.
[47] E. Burstein, Phys. Rev., vol. 93, p. 632, 1954.
[48] K. J. Kim and Y. R. Park, "Large and abrupt optical band gap variation in In-doped ZnO," Applied Physics Letters, vol. 78, p. 475, 2001.
[49] H. Agura, A. Suzuki, T. Matsushita, T. Aoki, and M. Okuda, "Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition," Thin Solid Films, vol. 445, p. 263, 2003.
[50] P. K. Song, M. Watanabe, M. Kon, A. Mitsui, and Y. Shigesato, "Electrical and optical properties of gallium-doped zinc oxide films deposited by dc magnetron sputtering," Thin Solid Films, vol. 411, p. 82-86, 2002.
[51] S.-M. Park, T. Ikegami, and K. Ebihara, "Effects of substrate temperature on the properties of Ga-doped ZnO by pulsed laser deposition," Thin Solid Films, vol. 513, p. 90, 2006.
[52] T. Yamada, A. Miyake, H. Makino, N. Yamamoto, and T. Yamamoto, "Effect of thermal annealing on electrical properties of transparent conductive Ga-doped ZnO films prepared by ion-plating using direct-current arc discharge," Thin Solid Films, vol. 517, p. 3134, 2009.
[53] H. Makino, N. Yamamoto, A. Miyake, T. Yamada, Y. Hirashima, H. Iwaoka, T. Itoh, H. Hokari, H. Aoki, and T. Yamamoto, "Influence of thermal annealing on electrical and optical properties of Ga-doped ZnO thin films," Thin Solid Films, vol. 518, p. 1386, 2009.
[54] N. Yamamoto, T. Yamada, A. Miyake, H. Makino, S. Kishimoto, and T. Yamamoto, "Relationship Between Residual Stress and Crystallographic Structure in Ga-Doped ZnO Film," Journal of The Electrochemical Society, vol. 155, p. J221, 2008.
[55] C. Kittel, Introduction to Solid State Physics, 6th ed. New York: Wiley, 1986.
[56] J. R. Bellingham, W. A. Phillips, and C. J. Adkins, "Intrinsic performance limits in transparent conducting oxides," Journal of Materials Science Letters, vol. 11, p. 263, 1992.
[57] D. C. Look, K. D. Leedy, D. H. Tomich, and B. Bayraktaroglu, "Mobility analysis of highly conducting thin films: Application to ZnO," Applied Physics Letters, vol. 96, p. 062102, 2010.
[58] H. J. Ko, Y. F. Chen, S. K. Hong, H. Wenisch, T. Yao, and D. C. Look, "Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy," Applied Physics Letters, vol. 77, p. 3761, 2000.
[59] E. Fortunato, V. Assunção, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, P. Vilarinho, and R. Martins, "High quality conductive gallium-doped zinc oxide films deposited at room temperature," Thin Solid Films, vol. 451, p. 443, 2004.
[60] V. Assunção, E. Fortunato, A. Marques, H. Águas, I. Ferreira, M. E. V. Costa, and R. Martins, "Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature," Thin Solid Films, vol. 427, p. 401, 2003.
[61] G. A. Hirata, J. McKittrick, T. Cheeks, J. M. Siqueiros, J. A. Diaz, O. Contreras, and O. A. Lopez, "Synthesis and optelectronic characterization of gallium doped zinc oxide transparent electrodes," Thin Solid Films, vol. 288, p. 29, 1996.
[62] X. Yu, J. Ma, F. Ji, Y. Wang, X. Zhang, C. Cheng, and H. Ma, "Preparation and properties of ZnO:Ga films prepared by r.f. magnetron sputtering at low temperature," Applied Surface Science, vol. 239, p. 222, 2005.
[63] Q.-B. Ma, Z.-Z. Ye, H.-P. He, S.-H. Hu, J.-R. Wang, L.-P. Zhu, Y.-Z. Zhang, and B.-H. Zhao, "Structural, electrical, and optical properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering," Journal of Crystal Growth, vol. 304, p. 64, 2007.
[64] M. Miyazaki, K. Sato, A. Mitsui, and H. Nishimura, "Properties of Ga-doped ZnO films," Journal of Non-Crystalline Solids, vol. 218, p. 323, 1997.
[65] G. K. Paul and S. K. Sen, "Sol-gel preparation, characterization and studies on electrical and thermoelectrical properties of gallium doped zinc oxide films," Materials Letters, vol. 57, p. 742, 2002.
[66] T. Yamamoto, T. Sakemi, K. Awai, and S. Shirakata, "Dependence of carrier concentrations on oxygen pressure for Ga-doped ZnO prepared by ion plating method," Thin Solid Films, vol. 451-452, p. 439, 2004.
[67] A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, "Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO," Nature Materials, vol. 4, p. 42, 2004.
[68] Z. K. Tang, G. K. L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, "Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films," Applied Physics Letters, vol. 72, p. 3270, 1998.
[69] R. L. Hoffman, B. J. Norris, and J. F. Wager, "ZnO-based transparent thin-film transistors," Applied Physics Letters, vol. 82, p. 733, 2003.
[70] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol. 432, p. 488, 2004.
[71] K. Koike, I. Nakashima, K. Hashimoto, S. Sasa, M. Inoue, and M. Yano, "Characteristics of a Zn0.7Mg0.3O∕ZnO heterostructure field-effect transistor grown on sapphire substrate by molecular-beam epitaxy," Applied Physics Letters, vol. 87, p. 112106, 2005.
[72] A. Janotti and C. G. Van de Walle, "Native point defects in ZnO," Physical Review B, vol. 76, 2007.
[73] B. Du Ahn, S. Hoon Oh, C. Hee Lee, G. Hee Kim, H. Jae Kim, and S. Yeol Lee, "Influence of thermal annealing ambient on Ga-doped ZnO thin films," Journal of Crystal Growth, vol. 309, p. 128, 2007.
[74] N. Y. Garces, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. Eason, D. C. Reynolds, and D. C. Look, "Production of nitrogen acceptors in ZnO by thermal annealing," Applied Physics Letters, vol. 80, p. 1334, 2002.
[75] H. S. Kang, "Annealing effect on the property of ultraviolet and green emissions of ZnO thin films," Journal of Applied Physics, vol. 95, p. 1246, 2004.
[76] X. J. Wang, I. A. Buyanova, W. M. Chen, C. J. Pan, and C. W. Tu, "Optical characterization studies of grown-in defects in ZnO epilayers grown by molecular beam epitaxy," Physica B: Condensed Matter, vol. 401, p. 413, 2007.
[77] C. Kittel, Introduction to Solid State Physics 6th ed. New York: Wiley 1986.
[78] B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, "Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films," Applied Physics Letters, vol. 68, p. 643, 1996.
[79] S.-K. Hong, H.-J. Ko, Y. Chen, and T. Yao, "Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures: transmission electron microscopy and triple-axis X-ray diffractometry," Journal of Crystal Growth, vol. 209, p. 537, 2000.
[80] L. Wang, Y. Pu, W. Fang, J. Dai, C. Zheng, C. Mo, C. Xiong, and F. Jiang, "Effect of high-temperature annealing on the structural and optical properties of ZnO films," Thin Solid Films, vol. 491, p. 323, 2005.
[81] F. Leiter, H. Alves, D. Pfisterer, N. G. Romanov, D. M. Hofmann, and B. K. Meyer, "Oxygen vacancies in ZnO," Physica B: Condensed Matter, vol. 340, p. 201, 2003.
[82] C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, "A comparative analysis of deep level emission in ZnO layers deposited by various methods," Journal of Applied Physics, vol. 105, p. 013502, 2009.
[83] L. Kameswara Rao and V. Vinni, "Novel mechanism for high speed growth of transparent and conducting tin oxide thin films by spray pyrolysis," Applied Physics Letters, vol. 63, p. 608, 1993.
[84] J. C. C. Fan and J. B. Goodenough, "X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films," Journal of Applied Physics, vol. 48, p. 3524, 1977.
[85] S. Major, S. Kumar, M. Bhatnagar, and K. L. Chopra, "Effect of hydrogen plasma treatment on transparent conducting oxides," Applied Physics Letters, vol. 49, p. 394, 1986.
[86] M. Weyers, M. Sato, and H. Ando, "Red Shift of Photoluminescence and Absorption in Dilute Gaasn Alloy Layers," Japanese Journal of Applied Physics Part 2-Letters, vol. 31, p. L853, 1992.
[87] Y. Nabetani, T. Mukawa, Y. Ito, T. Kato, and T. Matsumoto, "Epitaxial growth and large band-gap bowing of ZnSeO alloy," Applied Physics Letters, vol. 83, p. 1148, 2003.
[88] Y. Nabetani, T. Mukawa, T. Okuno, Y. Ito, T. Kato, and T. Matsumoto, "Structure and optical properties of ZnSeO alloys with O composition up to 6.4%," Materials Science in Semiconductor Processing, vol. 6, p. 343, 2003.
[89] R. Broesler, E. E. Haller, W. Walukiewicz, T. Muranaka, T. Matsumoto, and Y. Nabetani, "Temperature dependence of the band gap of ZnSe1-xOx," Applied Physics Letters, vol. 95, p. 151907, 2009.
[90] A. B. M. A. Ashrafi, A. Ueta, A. Avramescu, H. Kumano, I. Suemune, Y.-W. Ok, and T.-Y. Seong, "Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers," Applied Physics Letters, vol. 76, p. 550, 2000.
[91] W. Li, M. Pessa, and J. Likonen, "Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard’s law," Applied Physics Letters, vol. 78, p. 2864, 2001.
[92] Q. D. Zhuang, A. Krier, and C. R. Stanley, "Strain enhancement during annealing of GaAsN alloys," Journal of Applied Physics, vol. 101, p. 103536, 2007.
[93] M. Oueslati, M. Zouaghi, M. Pistol, L. Samuelson, H. Grimmeiss, and M. Balkanski, "Photoluminescence study of localization effects induced by the fluctuating random alloy potential in indirect band-gap GaAs1-xPx," Physical Review B, vol. 32, p. 8220, 1985.
[94] I. A. Buyanova, W. M. Chen, G. Pozina, J. P. Bergman, B. Monemar, H. P. Xin, and C. W. Tu, "Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy," Applied Physics Letters, vol. 75, p. 501, 1999.
[95] A. Polimeni, M. Capizzi, Y. Nabetani, Y. Ito, T. Okuno, T. Kato, T. Matsumoto, and T. Hirai, "Temperature dependence and bowing of the bandgap in ZnSe1-xOx," Applied Physics Letters, vol. 84, p. 3304, 2004.
[96] A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel, "Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-xAs1-yNy/GaAs single quantum wells," Physical Review B, vol. 63, 2001.
[97] J. Wu, W. Shan, and W. Walukiewicz, "Band anticrossing in highly mismatched III V semiconductor alloys," Semiconductor Science and Technology, vol. 17, p. 860, 2002.
[98] C. Y. Chen, J. I. Chyi, C. K. Chao, and C. H. Wu, "Optical properties of ZnSe1-xOx epilayers," Electronics Letters, vol. 45, p. 1267, 2009.
[99] Morkoç, "Handbook of Nitride Semiconductors and Devices (WileyVCH, Berlin, 2008) " vol. 2.
[100] W. Götz, N. M. Johnson, C. Chen, H. Liu, C. Kuo, and W. Imler, "Activation energies of Si donors in GaN," Applied Physics Letters, vol. 68, p. 3144, 1996.
[101] K. Ohkawa, T. Mitsuyu, and O. Yamazaki, "Characteristics of Cl-doped ZnSe layers grown by molecular-beam epitaxy," Journal of Applied Physics, vol. 62, p. 3216, 1987.
[102] K. Akimoto, T. Miyajima, and Y. Mori, "Photoluminescence spectra of oxygen-doped ZnSe grown by molecular-beam epitaxy," Physical Review B, vol. 39, p. 3138, 1989. |