次微米氮化鎵電晶體之製程與特性分析

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姓名

楊傑甯(Jie-ning Yang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

次微米氮化鎵電晶體之製程與特性分析
(The Device Fabrication and Characteristic of Sub-micron GaN HEMT)

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摘要(中)

近年來，能源問題越來越被人們所重視，使得在對半導體元件上之功率的要求也與日俱增。相較於傳統矽基材料，氮化鎵材料由於先天的材料優勢及特性，如:高耐熱、高崩潰電壓、高電子飽和速度、優秀的壓電效應以及高電流密度，使得在高速、高功率的應用上成為極佳的選擇，尤其適合像是在汽車電子高溫高功率的環境。
本論文為了實現高速、高電壓操作之氮化鎵高電子移動率功率電晶體，利用電子束微影系統(E-Beam Writer)製作特殊結構之次微米尺寸的電晶體。並利用氮化矽鈍化層製程對元件進行鈍化(passivation)製程，以改善在氮化鎵系統所一直被詬病的表面狀態以及高頻操作時的電流崩潰現象；配合主動元件之鈍化層製程，製作被動元件，並以模擬軟體設計電路，希望將主被動元件在藍寶石基板上整合成一放大器。

摘要(英)

In recent years, how to obtain a high power of semiconductor device is the major challenge in modern semiconductor application. The gallium nitride (GaN) device has outstanding electrical characteristics in comparison with silicon base device, such as temperature stability, high breakdown voltage, high electron velocity, and stronger piezoelectric effect due to nature of material properties. These advantages enable GaN HEMT to be a good candidate for high-speed, high power, and high-temperature applications.
In this thesis, we demonstrated the high speed and high power GaN HEMT fabricated with the sub-micron T-shape gate by the electron beam lithography. The additional passivation layer using the silicon nitride material on device surface reduces the surface trap effect and improve the current collapse drawback. Moreover, the passive and active components are fabricated on the same sapphire substrate for amplifier application. The passive components include resistor, capacitor, and inductor with model parameters from various sizes consideration.

關鍵字(中)

★ 氮化鎵
★ 電晶體

關鍵字(英)

★ GaN
★ HEMT

論文目次

目錄
摘要 I
英文摘要 II
第一章緒論 1
1.1 研究動機 1
1.2 材料特性 4
1.2.1 極化效應 5
1.3 電子束微影系統 (E-beam lithography system) 12
1.3.1 電子束微影系統原理 12
1.4 論文架構 14
第二章次微米氮化鎵高電子移導率電晶體介紹與實驗原理 15
2.1 AlGaN/GaN HEMT發展現況 15
2.1.1 AlGaN/GaN HEMT 結構與基板介紹 16
2.2 AlGaN/GaN HEMT元件製作 19
2.2.1 元件隔離製程(Mesa Isolation) 19
2.2.2 歐姆接觸金屬製程(Ohmic Contact) 19
2.2.3 T型閘極製程 21
2.2.4 金屬連接製程(Metal 1) 26
2.2.5 氮化矽鈍化層製程(Silicon Nitride Passivation) 26
2.2.6 金屬連接製程(Metal 2) 26
2. 3 結論 27
第三章次微米氮化鎵電晶體特性量測 28
3. 1 簡介 28
3.1. 1 元件直流特性量測 28
3. 2 元件高頻特性量測與小訊號參數分析 32
3. 3 元件之功率量測 39
3.3. 1 簡介 39
3.3. 2 Load Pull 功率測結果 39
3. 4 結論 41
第四章氮化矽鈍化層對元件特性之影響 42
4.1 簡介 42
4.2 Pulsed IV 量測 43
4.3 氮化矽鈍化層元件之直流特性與 45
4.3.1 簡介 45
4.3.2 氮化矽鈍化層元件之直流特性 45
4.4 氮化矽鈍化層對元件之高頻與功率特性影響 49
4.4.1 鈍化層元件之高頻特性分析 49
4.4.2 鈍化層元件之功率特性分析 51
4.5 結論 52
第五章結論 53
參考文獻 55
附錄A 62
附錄B 68
B.1 簡介 68
B.2 被動元件之製作與模型建立 68
B.2.1 金屬-絕緣層-金屬電容 70
B.2.2 螺旋電感 72
B.3 微波功率放大器設計與製作 74
B.4 微波功率放大器之量測結果 78
B.5 結論 80

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指導教授

辛裕明、詹益仁、林恒光
(Yue-ming Hsin、Yi-jen Chan、Heng-kuang Lin)

審核日期

2009-7-13

推文