應用在> W頻段（>110GHz）覆晶式具超高飽和電流-頻寬乘積的近彈道傳輸光偵測器

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吳喬蓁(Ciao-Jhen Wu) 查詢紙本館藏

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電機工程學系

論文名稱

應用在> W頻段（>110GHz）覆晶式具超高飽和電流-頻寬乘積的近彈道傳輸光偵測器
(Extremely High Saturation Current-Bandwidth Product Performance of a Near-Ballistic Uni-Traveling-Carrier Photodiode with a Flip-Chip Bonding Structure)

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摘要(中)

本論文針對1.55μm波長的光纖通訊系統中接收端前級元件光二極體之製作與研究，在元件幾何結構上摻入一層P型的電場承受層，因此可讓內部的電子速度維持在over shoot velocity，克服P-I-N 光偵測器與傳統單載子傳輸光偵測器的缺點，進而達到高速、高響應度、高頻寬的表現。並且利用覆晶結合技術與附有金柱基的氮化鋁基板結合，讓主動區面積28?m2的元件能夠承受更高的飽和電流(13.6mA)，而主動區面積144?m2預估擁有創新紀錄的飽和電流-頻寬之乘積(6660mA-GHz, 37mA, 180GHz)。

摘要(英)

In this study, we demonstrate near-ballistic uni-traveling carrier photodiodes (NBUTC-PDs) with an optimized flip-chip bonding structure, wide 3-dB optical-to-electrical (O-E) bandwidth (>110GHz), and extremely high saturation current-bandwidth product performance (37mA, >110GHz, >4070mA-GHz). NBUTC-PDs with different active areas (28 to 144?m2) are fabricated and flip-chip bonded with co-planar waveguides (CPWs) onto an AlN based pedestal. This improves the high-power performance without seriously sacrificing the speed performance. In addition, the saturation-current measurement results indicate that after inserting a center bonding pad on the pedestal (located below the p-metal of the NBUTC-PD for good heat-sinking), the saturation current performance of the device becomes much higher than that of the control device (without the center bonding pad), especially for the device with a small active area (28?m2). The measurement and modeling results indicate that a device with a 144?m2 active area and optimized flip-chip bonding pedestal can achieve an extremely high saturation current-bandwidth product (6660mA-GHz, 37mA, 180GHz).

關鍵字(中)

★ 光偵測器
★ 覆晶結合

關鍵字(英)

★ photodiode
★ flip chip bonding

論文目次

Abstract .............................i
摘要 .............................ii
誌謝 .............................iii
目錄 .............................v
圖目錄 .............................vii
表目錄 .............................ix
第一章序論 1
§1.1 光纖通訊之發展趨勢.............................1
§1.2 光偵測器之發展與應用 .........................7
§1.3覆晶結合技術之發展趨勢 ......................11
§1.4論文動機與架構 ......................................14
第二章彈道傳輸單載子光偵測器設計 ..............15
§2.1傳統P-I-N光偵測器工作原理 .................15
§2.2單載子傳輸光偵測器工作原理 ...............17
§2.3 彈道傳輸單載子光偵測器之磊晶層設計 ......21
第三章彈道傳輸單載子光偵測器設計 ...............24
§3.1近彈道傳輸單載子光偵測器之製程 ...............24
第四章彈道傳輸單載子光偵測器之量測與結果討論...........36
§ 4.1 Heterodyne-Beating 量測系統之架設 ...........36
§ 4.2 頻寬量測結果 ......................................37
§ 4.3 高功率產生量測結果 .............................42
第五章結論與未來研究方向 .............................45
參考文獻 ...............................................47

參考文獻

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指導教授

許晉瑋(Jin-Wei Shi)

審核日期

2009-7-15

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