參考文獻 |
[1] Gruhle, A. et al. ,”91 GHz SiGe HBTs grown by MBE”, Electron Lett. 29, 415 (1993)
[2] O’Neill, A.G. et al. ,”Deep submicron CMOS based on silicon germanium technology”,
IEEE. Trans. Electron Devcices 43, 911 (1996)
[3] R. P. G. Karunasiri. et al. ,” Infrared photodetectors with SiGe/Si multiple quantum wells”,
Opt. Eng(Bellingham) 33, 1468 (1994)
[4] J. C. Sturm. et al. ,” Well-resolved band-edge photoluminescence of excitons confined in
strained Si1-xGex quantum wells”, Phys. Rev. Lett. 66, 1362 (1911)
[5] L. Vescan. et al. ,” Optical and structural investigation of SiGe/Si quantum wells”, Appl.
Phys. Lett. 60, 2183 (1992)
[6] S. Fukatsu. et al. ,” High‐temperature operation of strained Si0.65Ge0.35/Si(111) p‐type
multiple‐quantum‐well light‐emitting diode grown by solid source Si molecular‐beam
epitaxy”, Appl. Phys. Lett. 63, 967 (1993)
[7] S. Fukatsu. et al. ,” Optical and structural investigation of SiGe/Si quantum wells”, Appl.
Phys. Lett. 71, 258 (1997)
[8] O. G. Schmidt et al. ,” Multiple layers of self-asssembled Ge/Si islands:Photoluminescence,
strain fields, material interdiffusion, and island formation”, Phys. Rev. B 61, 13721 (2000)
[9] Wen-Hao Chang et al. ,” Effects of spacer thickness on optical properties of stacked Ge/Si
quantum dots grown by chemical vapor deposition”, J. Appl. Phys. 93, 4999 (2003);
[10] Vinh Le Thanh et al. ,” Vertically self-organized Ge/Si(001) quantum dots in multilayer
structures”, Phys. Rev. B 60, 5851 (1999)
[11] P. S. Chen et al. ,” Improvement of photoluminescence efficiency in stacked Ge/Si/Ge
quantum dots with a thin Si spacer”, phys. stat. sol. (b) 241, No. 15, 3650–3655 (2004)
[12] Lianfeng Yang et al. ,” Si/SiGe heterostructure parameters for device simulations”,
Semicond. Sci. Technol. 19 (2004) 1174-1182
[13] J. H. Seok et al. ,” Electronic structure and compositional interdiffusion in self-assembled
Ge quantum dots on Si(001)”, Appl. Phys. Lett. 78, 3124 (2001)
[14] Chris G. Van de Walle ,” Band lineups and deformation potentials in the model-solid
theory”, Phys. Rev. B 39, 1871 (1989)
[15] M. W. Dashiell et al. ,” Photoluminescence investigation of phononless radiative
recombination and thermal-stability of germanium hut clusters on silicon(001)”, Appl. Phys.
Lett. 79, 2261 (2001)
[16] T. Baier et al. ,” Type-II band alignment in Si/Si1-xGex quantum wells from
photoluminescence line shifts due to optically induced band-bending effects: Experiment and
theory”, Phys. Rev. B 50, 15191 (1994)
[17] Y. S. Chiu et al. ,” Properties of photoluminescence in type-II GaAsSb/GaAs multiple
quantum wells”, J. Appl. Phys. 92, 5810 (2002)
[18] T. T. Chen et al. ,” Unusual optical properties of type-II InAs⁄GaAs0.7Sb0.3 quantum dots by
photoluminescence studies”, Phys. Rev. B 75, 033310 (2007)
[19] O. G. Schmidt et al. ,” Modified Stranski–Krastanov growth in stacked layers of
self-assembled islands”, Appl. Phys. Lett. 74, 1272 (1999)
[20] G. Bremond et al. ,” Optical study of germanium nanostructures grown on a Si(118)
vicinal substrate”, Microelectronics Journal 30 (1999) 357–362
[21] H. Sunamura et al. ,” Island formation during growth of Ge on Si(100): A study using
photoluminescence spectroscopy”, Appl. Phys. Lett. 66, 3024 (1995)
[22] Alexander V. Kolobov et al. ,” Local structure of uncapped and Si-capped Ge/Si(100)
self-assembled quantum dots”, Appl. Phys. Lett. 78, 451(2001)
[23] C. M. Wei et al. ,” In-plane optical anisotropy in self-assembled Ge quantum dots
induced by interfacial chemical bonds”, Appl. Phys. Lett. 90, 061912 (2007)
[24] J. Wan et al. ,” Band alignments and photon-induced carrier transfer from wetting layers
to Ge islands grown on Si(001)”, Appl. Phys. Lett. 78, 1763 (2001)
[25] J. Wan et al. ,” Effects of interdiffusion on the band alignment of GeSi dots”, Appl. Phys.Lett. 79, 1980 (2001)
[26] W.-H. Chang et al. ,” Room-temperature electroluminescence at 1.3 and 1.5 mm from
Ge/Si self-assembled quantum dots”, Appl. Phys. Lett. 83,2958 (2003)
[27] R. Apetz et al. ,” Photoluminescence and electroluminescence of SiGe dots fabricated by
island growth”, Appl. Phys. Lett. 66, 445 (1995)
[28] J. Weber et al. ,” Near-band-gap photoluminescence of Si-Ge alloys”, Phys. Rev. B 40,
5683 (1989)
[29] QiJia Cai et al. ,” The effects of thermal annealing in self-assembled Ge/Si quantum
dots”, Applied Surface Science 253 (2007) 4792–4795
[30] J. Weber et al. ,” Type-II band alignment in Si/Si1-xGex quantum wells from
photoluminescence line shifts due to optically induced band-bending effects: Experiment and
theory”, Phys. Rev. B 50, 15191 (1994)
[31] A. I. Yakimov et al. ,” Enhanced oscillator strength of interband transitions in coupled
Ge/Si quantum dots”, Appl. Phys. Lett. 93, 132105 (2008)
[32] C. Weisbuch, B. Vinter, Quantum Semiconductor Structures (Academic,Boston, 1991),
p. 20.
[33] C. Dais et al.,”Photoluminecene studies of SiGe quantum
|