| 參考文獻 |
1.1 C. H. Kuo, C. L. Yeh, P. H. Chen, W. C. Lai, C. J. Tun, J. K. Sheu, and G. C. Chi, “Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact Layer,” J. Electrochem. Soc. 11, H269 (2008).
1.2 P. H. Chen, W. C. Lai, L. C. Peng, C. H. Kuo, C. L. Yeh, J. K. Sheu, and C. J. Tun, “GaN-based LEDs with AZO:Y upper contact,” IEEE Trans. Electron. Devices 57, 134 (2010).
1.3 O. Kluth, B. Rech, L. Houben, S. Wieder, G. Schope, C. Beneking, H. Wagner, A. Loffl, and H. W. Schook, “Texture etched ZnO:Al coated glass substrates for silicon based thin film solar cells,” Thin Solid Films 351, 247 (1999).
1.4 A. Favier, D. Munoz, S. Martin de Nicolas, and P. J. Ribeyron, “Boron-doped zinc oxide layers grown by metal-organic CVD for silicon heterojunction solar cells applications,” Sol. Energy Mater. Sol. Cells 95, 1057 (2001).
1.5 S. Major, S. Kumar, M. Bhatnagar, and K. L. Chopra, “Effect of hydrogen plasma treatment on transparent conducting oxides,” Appl. Phys. Lett. 49, 394 (1986).
1.6 T. Minami, K. Oohashi, S. Takata, T. Mouri, and N. Ogawa, “Preparations of ZnO:Al transparent conducting films by D.C. magnetron sputtering,” Thin Solid Films 193, 721 (1999).
1.7 K. Ellmer, “Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties,” J. Phys. D: Appl. Phys. 33, R17 (2000).
1.8 F. C. Devy, N. Barreau, and J. Kessler, “Dependence of ZnO:Al properties on the substrate to target position in RF sputtering,” Thin Solid Films 516, 7094 (2008).
1.9 K. Kushiya, M. Tachiyuki, Y. Nagoya, A. Fujimaki, B. Sang, D. Okumura, M. Satoh, and O. Yamase, “Progress in large-area Cu(InGa)Se2-based thin-film modules with a Zn(O,S,OH)x buffer layer,” Sol. Energy Mater. Sol. Cells 67, 11 (2001).
1.10 Y. Hagiwara, T. Nakada, and A. Kunioka, “Improved Jsc in CIGS thin film solar cells using a transparent conducting ZnO:B window layer,” Sol. Energy Mater. Sol. Cells 67, 267 (2001).
1.11 Y. Nagoya, B. Sang, Y. Fujiwara, K. Kushiya, and O. Yamase, “Improved performance of Cu(In,Ga)Se2-based submodules with a stacked structure of ZnO window prepared by sputtering,” Sol. Energy Mater. Sol. Cells 75, 163 (2003).
1.12 B. Sang, Y. Nagoya, K. Kushiya, and O. Yamase, “MOCVD-ZnO windows for 30cm×30cm CIGS-based modules,” Sol. Energy Mater. Sol. Cells 75, 179 (2003).
1.13 S. Y. Myong, and K. S. Lim, “Highly stable and textured hydrogenated ZnO thin films,” Appl. Phys. Lett. 82, 3026 (2003).
1.14 S. Y. Myong, and K. S. Lim, “Improvement of electrical and optical properties of ZnO thin films prepared by MOCVD using UV light irradiation and in situ H2 post-treatment,” Sol. Energy Mater. Sol. Cells 86, 105 (2005).
1.15 S. Y. Myong, S. I. Park, and K. S. Lim, “Improvement of electrical stability of polycrystalline ZnO thin films via intentional post-deposition hydrogen doping,” Thin Solid Films 513, 148 (2006).
1.16 P. K. Song, M. Watanabe, M. Kon, A. Mitsui, and Y. Shigesato, “Electrical and optical properties of gallium-doped zinc oxide films deposited by dc magnetron sputtering,” Thin Solid Films 411, 82 (2002).
1.17 L. Y. Chen, W. H. Chen, J. J. Wang, F. C. N. Hong, and Y. K. Su, “Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering,” Appl. Phys. Lett. 85, 5628 (2004).
1.18 Y. R. Park, J. Kim, and Y. S. Kim, “Effect of hydrogen doping in ZnO thin films by pulsed dc magnetron sputtering,” Appl. Surf. Sci. 255, 9010 (2009).
1.19 D. H. Kim, S. H. Lee, G. H. Lee, H. B. Kim, K. H. Kim, Y. G. Lee, and T. H. Yu, “Effects of deposition temperature on the effectiveness of hydrogen doping in Ga-doped ZnO thin films,” J. Appl. Phys. 108, 023520 (2010).
1.20 S. J. Baik, J. H. Jang, C. H. Lee, W. Y. Cho, and K. S. Lim, “Highly textured and conductive undoped ZnO film using hydrogen post-treatment,” Appl. Phys. Lett. 70, 3516 (1997).
1.21 B. Y. Oh, M. C. Jeong, D. S. Kim, W. Lee, and J. M. Myoung, “Post-annealing of Al-doped ZnO films in hydrogen atmosphere,” J. Crystal Growth 281, 475 (2005).
1.22 P. F. Cai, J. B. You, X. W. Zhang, J. J. Dong, X. L. Yang, Z. G. Yin, and N. F. Chen, “Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment,” J. Appl. Phys. 105, 083713 (2009).
2.1 D. C. Look, J. W. Hemsky, and J. R. Sizelove, “Residual native shallow donor in ZnO,” Phys. Rev. Lett. 82, 2552 (1999).
2.2 A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle, “First-principles study of native point defects in ZnO,” Phys. Rev. B 61, 15019 (2000).
2.3 A. Janotti, and C. G. Van de Walle, “Oxygen vacancies in ZnO,” Appl. Phys. Lett. 87, 122102 (2005).
2.4 A. Janotti, and C. G. Van de Walle, “Native point defects in ZnO,” Phys. Rev. B 76, 165202 (2007).
2.5 S. Major, A. Banerjee, and K. L. Chopra, “Highly transparent and conducting indium-doped zinc oxide films by spray pyrolysis,” Thin Solid Films 108, 333 (1983).
2.6 T. Minami, H. Sato, H. Nanto, and S. Takata, “Group III impurity doped zinc oxide thin films prepared by RF magnetron sputtering,” Jpn. J. Appl. Phys. 24, L781 (1985).
2.7 J. H. Lee, and B. O. Park, “Transparent conducting ZnO:Al In and Sn thin films deposited by the sol-gel method,” Thin Solid Films 426, 94 (2003).
2.8 M. Miyazaki, K. Sato, A. Mitsui, and H. Nishimura, “Properties of Ga-doped ZnO films,” J. Non-Cryst. Solids 218, 323 (1997).
2.9 T. Minami, T. Miyata, Y. Ohtani, and Y. Mochizuki, “New transparent conducting Al-doped ZnO film preparation techniques for improving resistivity distribution in magnetron sputtering deposition,” Jpn. J. Appl. Phys. 45, L409 (2006).
2.10 A. Asvarov, A. Abduev, A. Akhmedov, and A. A bdullaev, “Effects of a high humidity environment and air anneal treatments on the electrical resistivity of transparent conducting ZnO-based thin films,” Phys. Status Solidi C 7, 1553 (2010).
2.11 Z. F. Liu, F. K. Shan, Y. X. Li, B. C. Shin, and Y. S. Yu, “Epitaxial growth and properties of Ga-doped ZnO films grown by pulsed laser deposition,” J. Crystal Growth 259, 130 (2003)
2.12 B. D. Ahn, S. H. Oh, C. H. Lee, G. H. Kim, H. J. Kim, and S. Y. Lee, “Influence of thermal annealing ambient on Ga-doped ZnO thin films,” J. Crystal Growth 309, 128 (2007)..
2.13 B. M. Ataev, A. M. Bagamadova, A. M. Djabrailov, V. V. Mamedov, and R. A. Rabadanov, “Highly conductive and transparent Ga-doped epitaxial ZnO films on sapphire by CVD,” Thin Solid Films 260, 19 (1995).
2.14 S. A. Studenikin, N. Golego, and M. Cocivera, “Optical and electrical properties of undoped ZnO films grown by spray pyrolysis of zinc nitrate solution,” J. Appl. Phys. 83, 2104 (1998).
2.15 H. Gomez, and M. de la L. Olvera, “Ga-doped ZnO thin films: Effect of deposition temperature, dopant, concentration, and vacuum-thermal treatment on the electrical, optical, structural and morphological properties,” Mat. Sci. E. B 134, 20 (2006).
2.16 C. G. Van de Walle, “Hydrogen as a cause of doping in zinc oxide,” Phys. Rev. Lett. 85, 1012 (2000).
2.17 S. F. J. Cox, E. A. Davis, S. P. Cottrell, P. J. C. King, J. S. Lord, J. M. Gil, H. V. Alberto, R. C. Vilao, J. P. Duarte, N. A. de Campos, A. Weidinger, R. L. Lichti, and S. J. C. Irvine, “Experimental confirmation of the predicted shallow donor hydrogen state in zinc oxide,” Phys. Rev. Lett. 86, 2601 (2001).
2.18 D. M. Hofmann, A. Hofstaetter, F. Leiter, H. Zhou, F. Henecker, and B. K. Meyer, “Hydrogen: A relevant shallow donor in zinc oxide,” Phys. Rev. Lett. 88, 045504 (2002).
2.19 C. G. Van de Walle, and J. Neugebauer, “Universal alignment of hydrogen levels in semiconductors, insulators and solutions,” Nature, (London) 423, 626 (2003).
2.20 G. A. Shi, M. Stavola, S. J. Pearton, M. Thieme, E. V. Lavrov, and J. Weber, “Hydrogen local modes and shallow donors in ZnO,” Phys. Rev. B 72, 195211 (2005).
2.21 M. G. Wardle, J. P. Goss, and P. R. Briddon, “First-principles study of the diffusion of hydrogen in ZnO,” Phys. Rev. Lett. 96, 205504 (2006).
2.22 A. Janotti, and C. G. van de Walle, “Hydrogen multicentre bonds,” nat. mater. 6, 44 (2007).
2.23 J. Bang, and K. J. Chang, “Diffusion and thermal stability of hydrogen in ZnO,” Appl. Phys. Lett. 92, 132109 (2008).
2.24 L. J. van der Pauw, “A method of measuring the resistivity and Hall coefficient on lamellae of arbitrary shape,” Philips Tech. Rev 20, 220 (1954).
2.25 L. J. van der Pauw, “A method of measuring specific resistivity and Hall effect of discs of arbitrary shape,” Philips Res. Repts 13, 1 (1958).
2.26 E. Burstein, “Anomalous optical absorption limit in InSb,” Phys. Rev. 93, 632 (1954).
2.27 T. S. Moss, “The interpretation of the properties of indium antimonide,” Proc. Phys. Soc. London, Sect. B 67, 775 (1954).
2.28 M. Fox, “optical properties of solids,” Oxford university press, 2001.
2.29 J. I. Pankove, “Optical process in semiconductors”, Dover, New York, 1971, (chapter 3).
2.30 F. Ruske, V. Sittinger, W. Werner, B. Szyszka, K.-U. van Osten, and K. R. Rix, “Hydrogen doping of DC sputtered ZnO:Al films from novel target material,” Surf. Coat. Technol. 200, 236 (2005).
2.31 P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%,” Prog. Photovolt: Res. Appl 19, 894 (2011).
2.32 M. A. Green, K. Emery, Y. Hishikawa, W. Warta, and E. D. Dunlop, “Solar cell efficiency tables (version 39),” Prog. Photovolt: Res. Appl 20, 12 (2012).
2.33 Moller, H. J., “Semiconductors for solar cells,” Artech House (Boston), 1993.
2.34 J. R. Woodyard, and G. A. Landis, “Radiation resistance of thin-film solar cells for space photovoltaic power,” Sol. Cells 31, 297 (1991).
3.1 K. Zakrzewska, T. Pisarkiewicz, and A. Czapla, “Scattering of charge carriers in reactively sputtered CdIn2O4 thin films,” Phys. Status Solidi (a) 99, 141 (1987).
3.2 T. Minami, H. Sato, K. Ohashi, T. Tomofuji, and S. Takata, “Conduction mechanism of highly conductive and transparent zinc oxide thin films prepared by magnetron sputtering,” J. Crystal Growth 117, 370 (1992).
3.3 D. H. Zhang, and H. L. Ma, “Scattering mechanisms of charge carriers in transparent conducting oxide films,” Appl. Phys. A 62, 487 (1996).
3.4 N. Fujimura, T. Nishihara, S. Goto, J. Xu, and T. Ito, “Control of preferred orientation for ZnOx films: control of self-texture,” J. Crystal Growth 130, 269 (1993).
3.5 Y. S. Kang, H. Y. Kim, and J. Y. Lee, “ Effects of hydrogen on the structural and electro-optical properties of zinc oxide thin films,” J. Electrochem. Soc. 147, 4625 (2000).
3.6 J. Kiss, A. Witt, B. Meyer, and D. Marx, “Methanol synthesis on ZnO(000). I. hydrogen coverage, charge state of oxygen vacancies and chemical reactivity,” J. Chem. Phys. 130, 184706 (2009).
3.7 J. K. Sheu, K. W. Shu, M. L. Lee, C. J. Tun, and G. C. Chi, “Effect of thermal annealing on Ga-doped ZnO films prepared by magnetron sputtering,” J. Electrochem. Soc. 154, H521 (2007).
3.8 W. T. Yen, Y. C. Lin, P. C. Yao, J. H. Ke, and Y. L. Chen, “Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering,” Thin Solid Films 518, 3882 (2010).
3.9 L. V. Azaroff, “Element of X-ray Crystallography, McGraw-Hill,” New York, 1968, p552.
4.1 A. Ohtomo, H. Kimura, K. Saito, T. Makino, Y. Segawa, H. Koinuma, and M. Kawasaki, “Lateral grain size and electron mobility in ZnO epitaxial films grown on sapphire substrates,” J. Crystal Growth 214, 284 (2000).
4.2 N. Ohashi, I. Sakaguchi, S. Hishita, Y. Adachi, H. Hareda, and T. Ogino, “Crystallinity of In2O3(ZnO)5 films by epitaxial growth with a self-buffer-layer,” J. Appl. Phys. 92, 2378 (2002).
4.3 E. M. Kaidashev, M. Lorenz, H. V. Wenckstern, A. Rahm, H. C. Semmelhack, K. H. Han, G. Benndorf, C. Bundesmann, H. Hochmuth, and M. Grundmann, “High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep, pulsed-laser deposition,” Appl. Phys. Lett. 82, 3901 (2003).
4.4 J. P. Wiff, Y. Kinemuchi, and K. Watari, “Hall mobilities of Al- and Ga-doped ZnO polycrystals,” Mater. Lett. 63, 2470 (2009).
5.1 S. Liang, and X. Bi, “Structure, conductivity, and transparency of Ga-doped ZnO thin films arising from thickness contributions,” J. Appl. Phys. 104, 113533 (2008).
5.2 J. H. Kim, B. D. Ahn, C. H. Lee, K. A. Jeon, H. S. Kang, and S. Y. Lee, “Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature,” J. Appl. Phys. 100, 113515 (2006).
5.3 V. Khranovskyy, U. Grossner, O. Nilsen, V. Lazorenko, G. V. Lashkarev, B. G. Svensson, and R. Yakimova, “Structural and morphological properties of ZnO:Ga thin films,” Thin Solid Films 515, 472 (2006).
5.4 B. T. Lee, T. H. Kim, and S. H. Jeong, “Growth and characterization of single crystalline Ga-doped ZnO films using rf magnetron sputtering,” J. Phys. D: Appl. Phys. 39, 957 (2006).
5.5 T. H. Kim, S. H. Jeong, I. S. Kim, S. S. Kim, and B. T. Lee, “Magnetron sputtering growth and characterization of high quality single crystal Ga-doped n-ZnO thin films,” Semicond. Sci. Technol. 20, L43 (2005).
5.6 X. Yu, J. Ma, F. Ji, Y. Wang, X. Zhang, and H. Ma, “Influence of annealing on the properties of ZnO:Ga films prepared by radio frequency magnetron sputtering,” Thin Solid Films 483, 296 (2005).
5.7 K. K. Kim, S. Niki, J. Y. Oh, J. O. Song, T. Y. Seong, S. J. Park, S. Fujita, and S. W. Kim, “High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing,” J. Appl. Phys. 97, 066103 (2005).
5.8 J. I. Nomoto, M. Konagai, K. Okada, T. Ito, T. Miyata, and T. Minami, “Comparative study of resistivity characteristics between transparent conducting AZO and GZO thin films for use at high temperatures,” Thin Solid Films 518, 2937 (2010).
5.9 B. D. Ahu, J. H. Kim, H. S. Kang, C. H. Lee, S. H. Oh, K. W. Kim, G. E. Jang, and S. Y. Lee, “Thermally stable, highly conductive, and transparent Ga-doped ZnO thin films,” Thin Solid films 516, 1382 (2008).
6.1 K. Herz, A. Eicke, F. Kessler, R. Wachter, and M. Powalla, “Diffusion barriers for CIGS solar cells on metallic substrates,” Thin Solid Films 431, 392 (2003).
6.2 S. H. Wei, S. B. Zhang, and A. Zunger, “Effects of Na on the electrical and structural properties of CuInSe2,” J. Appl. Phys. 85, 7214 (1999).
6.3 M. Bodegard, K. Granath, L. Stolt, and A. Rockett, “The behavior of Na implanted into Mo thin films during annealing,” Sol. Energy Mater. Sol. Cells 58, 199 (2005).
6.4 T. Nakada, D. Iga, H. Ohbo, and A. Kunioka, “Effects of Sodium on Cu(In,Ga)Se2-Based thin films and solar cells,” Jpn. J. Appl. Phys. 36, 732 (1997).
6.5 L. Assmann, J. C. Bernede, A. Drici, C. Amory, E. Halgand, and M. Morsli, “Study of the Mo thin films and Mo/CIGS interface properties,” Appl. Surf. Sci. 246, 159 (2005).
6.6 T. Wada, N. Kohara, S. Nishiwaki, and T. Negami, “Characterization of the Cu(In,Ga)Se2/Mo interface in CIGS solar cells,” Thin Solid Films 387, 118 (2001).
6.7 D. A. Ras, G. Kostorz, D. Bremaud, M. Kalin, F. V. Kurdesau, A. N. Tiwari, and M. Dobeli, “Formation and characterization of MoSe2 for Cu(In, Ga)Se2 based solar cells,” Thin Solid Films 480, 433 (2005).
6.8 D. Hariskos, S. Spiering, and M. Powalla, “Buffer layers in Cu(In,Ga)Se2 solar cells and modules,” Thin Solid Films 480, 99 (2001).
6.9 中田時夫, CIGS太陽能電池の基礎技術,日刊工業新聞社 (2010).
6.10 S. Ishizuka, K. Sakurai, A. Yamada, K. Matsubara, P. Fons, K. Iwata, S. Nakamura, Y. Kimura, T. Baba, H. Nakanishi, T. Kojima, and S. Niki, “Fabrication of wide-gap Cu(In1_xGax)Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness,” Sol. Energy Mater. Sol. Cells 87, 541 (2005).
6.11 U. Rau, and M. Schmidt, “Electronic properties of ZnO/CdS/CuInGaSe2 solar cells- aspects of heterojunction formation,” Thin Solid Films 387, 141 (2001).
6.12 M. A. Martinez, J. Herrero, and M. T. Gutierrez, “Deposition of transparent and conductive Al-doped ZnO thin films for photovoltaic solar cells,” Sol. Energy Mater. Sol. Cells 45, 75 (1997).
6.13 D. H. Cho, Y. D. Chung, K. S. Lee, N. M. Park, and K. H. Kim, “Influence of growth temperature of transparent conducting oxide layer on Cu(In,Ga)Se2 thin-film solar cells,” Thin Solid Films 520, 2115 (2011).
6.14 M. A. Martinez, C. Guillen, M. T. Gutierrez, and J. Herrero, “Optimization of Cds-TCO bilayers for their application as windows in photovoltaic solar cells,” Sol. Energy Mater. Sol. Cells 43, 297 (1996).
6.15 N. F. Cooray, K. Kushiya, A. Fujimaki, I. Sugiyama, T. Miura, D. Okumura, M. Sato, M. Ooshita, and O. Yamase, “Large area ZnO films optimized for graded band-gap Cu(InGa)Se2-based thin-film mini-modules,” Sol. Energy Mater. Sol. Cells 49, 291 (1997).
6.16 B. Sang, K. Kushiya, D. Okumura, and O. Yamase, “Performance improvement of CIGS-based modules by depositing high-quality Ga-doped ZnO windows with magnetron sputtering,” Sol. Energy Mater. Sol. Cells 67, 237 (2011).
6.17 Z. A. Wang, J. B. Chu, H. B. Zhu, Z. Sun, Y. W. Chen, and S.M. Huang, “Growth of ZnO:Al films by RF sputtering at room temperature for solar cell applications,” Solid-State Electronics 53, 1149 (2009).
6.18 R. Menner, D. Hariskos, V. Linss, and M. Powalla, “Low-cost ZnO:Al transparent contact by reactive rotatable magnetron sputtering for Cu(In,Ga)Se2 solar modules,” Thin Solid Films 519, 7541 (2011).
6.19 M. M. Islam, S. Ishizuka, A. Yamada, K. Matsubara, S. Niki, T. Sakurai, and K. Akimoto, “Thickness study of Al:ZnO film for application as a window layer in Cu(In1-xGax)Se2 thin film solar cell,” Appl. Surf. Sci. 257, 4026 (2011). |
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