以自發性化學蝕刻法製備矽奈米結構成長控制之研究

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姓名

張家彬(Chia-pin Chang) 查詢紙本館藏

畢業系所

能源工程研究所

論文名稱

以自發性化學蝕刻法製備矽奈米結構成長控制之研究
(Fabrication of Silicon Nanostructures Using Spontaneous Chemical Etching)

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摘要(中)

矽基奈米結構具有許多優異的性質，廣泛應用於半導體、光電、生醫及能源領域中，因此發展製程技術扮演著關鍵的角色。本研究為探討一種簡易與迅速的金屬輔助化學蝕刻法，其方式不同以往的固-液-氣法與電化學蝕刻法，可在常溫與常壓條件下，利用自發性的電化學反應，即可生成出大面積且均勻的矽基奈米結構。為探討以此反應所成長矽基奈米結構，於不同金屬層、厚度、矽基材阻抗、蝕刻液及反應時間等參數下進行生成反應，而藉由電子顯微鏡觀察矽奈米結構的表面形貌、影像的分析及量測孔隙率等性質討論。經一系列實驗後發現，金屬的種類將會影響蝕刻速率，當反應的金屬薄膜厚度增加，結構將由奈米孔洞狀逐漸轉變為獨立且均勻分佈的奈米線與片狀結構。在此，為了達到更簡易、迅速性及低成本優勢，於矽表面以無電鍍技術來達到沉積金屬層，藉由金屬奈米粒子的變化可得到更細小及緻密的孔狀、片狀與線柱狀奈米結構產物，更增加其實際應用的可能性。

摘要(英)

In recent years, silicon nanostructures have received great deal of attention from it is unique surface effects. The use of silicon nanostructures have been applied to a wide variety of fields including semiconductor, optoelectronic, biological and energy field. Therefore, developing silicon nanostructure fabrication technique becomes an intriguing topic for researchers. A fast and simple fabrication method called metal-assist chemical etching was investigated in this thesis. Compare with other silicon nanostructure fabrication techniques such as the solid-liquid-gas and electrochemical etching, metal-assist etching is a spontaneous electrochemical reaction which can uniformly create large area silicon nanostructure in room temperature and atmosphere conditions. In order to effectively control the growth of silicon nanostructure, effects of process parameters such as metal layer, substrate resistivity, etchant composition and etching time are investigated. SEM images are taken to characterize the silicon nanostructure morphologies. We found that the metal layer have significant effects to the silicon nanostructure formation. When the metal thickness increases, the nanostructures change from nanopores to nanofilaments or nanowires. In order to have simpler, faster and lower cost fabrication process, we further developed an electroless plating method to deposite the metal layer on silicon surface. In this thesis, we successfully demonstrate that finer silicon nanostructure can be fabricated through the electroless plating approach which holds great commercial potential from its simple, fast and low cost advantages.

關鍵字(中)

★ 無電鍍
★ 金屬輔助化學蝕刻
★ 電化學
★ 矽奈米結構

關鍵字(英)

★ Electrochemical
★ Metal-assist chemical etching
★ Silicon Nanostructures
★ Electroless Plating

論文目次

摘要I
AbstractII
目錄IV
圖目錄VIII
表目錄XIII
第一章緒論1
1-1 研究背景 1
1.2 研究動機與目的 2
1-3 論文架構 3
第二章矽基奈米結構製程與原理 4
2-1 以高溫及真空製程生長奈米線 4
2-2 電化學蝕刻法 6
2-2-1 電化學蝕刻原理 6
2-2-2 矽溶解反應 7
2-2-3 多孔矽形成機制 9
2-3 金屬輔助化學蝕刻法 11
2-3-1 簡介與原理 11
2-3-2 矽奈米結構形成之影響 13
2-4 矽的無電鍍反應 17
第三章實驗方法與儀器設備23
3-1 材料與藥品 23
3-2 實驗設備與分析儀器 23
3-3 實驗方法 24
3-3-1 沉積金屬薄膜 24
3-3-2 製備結構 25
3-3-3 試片分析 26
第四章結果與討論30
4.1 以物理氣相沉積金屬對奈米結構之研究 30
4.1.1 不同厚度的金催化層之影響 32
4.1.2 以金催化在不同矽阻抗之反應時間之影響 35
4.1.3 蝕刻液之影響 41
4.1.4 不同厚度的銀催化層之影響 45
4.1.5 以銀催化在不同矽阻抗之反應時間之影響 50
4.2 以無電鍍金屬對奈米結構之研究 54
4.2.1 無電鍍金屬於矽表面之變化 54
4.2.2 金催化層之影響 58
4.2.3 以金催化在不同阻抗與反應時間之影響 61
4.2.4 銀沉積時間變化之影響 67
4.2.5 以銀催化在不同阻抗與反應時間之影響 68
第五章結論74
5.1 結論 74
5.2 未來展望 75
5.2.1 製備均一排列的陣列結構 75
5.2.2 能源應用 75
5.2.3 生醫應用 76
參考文獻
附錄

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指導教授

曹嘉文(Chia-wen Tsao)

審核日期

2010-7-29

推文