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姓名 陳昱達(Yuh-dar Chen) 查詢紙本館藏 畢業系所 材料科學與工程研究所 論文名稱 高度反射性銀/鑭雙層p型氮化鎵歐姆接觸之性質研究
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摘要(中) 隨著GaN-based 發光二極體的蓬勃發展，為了達到固態照明的目標，主要從元件頂部透明導電層發光的傳統LED已無法滿足此需求，因此目前有垂直結構LED和覆晶結構LED這兩種類型的元件結構被提出來製作超高亮度LED，對於這兩種類型LED，尋求一個具有高度反射性且與p型氮化鎵有低接觸電阻的歐姆接觸結構是關鍵的，其中銀因為在可見光範圍中有最高的反射性以及能夠經由退火和p型氮化鎵形成良好的歐姆接觸，所以是相當不錯的選擇，但是當它在快速熱退火處理來獲得低的接觸電阻或者在和其他基板作鍵合時，銀薄膜會因為快速地發生聚集的現象，造成薄膜瓦解成許多島狀物而露出氮化鎵表面，這會使得接觸電阻增加和反射性降低，造成元件驅動電壓增加與光輸出功率減少，所以讓銀維持良好的薄膜狀態是很重要的，有鑑於此，我們在銀薄膜上，多鍍上一層薄的鑭層，此種接觸結構在450℃快速熱退火後，會具有比銀接觸結構更低的特徵接觸電阻以及更高的反射率分別為3.449×10-4Ω cm2和96％，它能具備如此優良的表現是因為鑭本身非常容易氧化，而氧化鑭在退火時，能夠做為一良好的鈍化層，防止銀薄膜曝露在含有氧氣的環境中，所以可以避免因為銀原子表面擴散係數的大幅增加而造成的嚴重聚集，此外我們也藉由長時間退火來測試Ag/La結構之熱穩定度，以了解其在高功率發光二極體元件的鍵合製程時之可靠度，實驗結果顯示此結構在長時間熱處理後，仍然具有良好的性質，因此銀鑭雙層結構十分適合當作p型氮化鎵的反射性歐姆接觸。
摘要(英) GaN-based Light-emitting diode has great progress in recent years. In order to achieve the purpose of solid-state lighting, conventional LED which emit most light through the transparent conducting layer on the top of device could not satisfy this demand. Two types of LED device structure, which are vertical structure LED and flip-chip structure LED, have been proposed to fabricate high brightness LED. For these LEDs, it is critical to search for a ohmic contact structure which is highly reflective and low contact resistance to p-GaN. In all materials, silver is a good choice for being used as a p-GaN ohmic contact because it has the highest reflectivity in visible spectrum and forms a good contact to p-GaN by annealing. But Ag film would agglomerate rapidly and be divided into lots of islands when it was rapid-thermal-annealed for obtaining low contact resistance or bonded with another substrate. The phenomena described above resulted in the increase of forward voltage of device and the decrease of light output power. So it is important to avoid the agglomeration of silver thin film. For this reason, we evaporated a thin lanthanum layer on thick Ag layer. After rapid-thermal-annealing at 450℃for 1minute, this structure exhibited the lower specific contact resistivity of 3.449×10-4Ω cm2 and higher reflectivity of 96％ than single Ag contact. The reason why it has better performance is that lanthanum is easy to oxidize into lanthanum oxide. And it may be a good passivation layer for preventing Ag film from exposing in oxygen-containing ambience. As a result, it could inhibit the serious agglomeration of Ag film which was caused by the drastic increase of surface diffusion coefficient of Ag atom. Besides, we tested the thermal stability of Ag/La bilayer structure for investigating the reliability of this structure during the bonding process of two LEDs. Experimental results showed that it still had the good property after long-time heat treatment. Therefore, Ag (200nm) / La (40nm) bilayer structure is suitable for the reflective ohmic contact of p-GaN.
關鍵字(中) ★ 歐姆接觸
★ 氮化鎵關鍵字(英) ★ ohmic contact
★ gallium nitride論文目次 中文摘要 i
英文摘要 iii
致謝 v
目錄 vi
圖目錄 ix
第一章 序論 1
第二章 文獻回顧 4
2.1 金屬半導體接觸理論 4
2.1.1 整流接觸(Rectified contact) 4
2.1.2 非整流接觸(Non-rectified contact) 6
2.2 金屬半導體接面的電流傳導機制 8
2.2.1 熱離子放射(Thermionic emission) 8
2.2.2 熱離子場放射(Thermionic field emission) 10
2.2.3 場放射(Field emission) 11
2.3 接觸電阻及其量測技術 13
2.3.1 雙接觸兩端點量測法(Two-contact two-terminal method) 13
2.3.2 多接觸兩端點量測法(Multiple-contact two-terminal method) 16
2.3.3 四端點量測法(Four-terminal contact resistance method) 28
2.4 P型氮化鎵歐姆接觸之發展 30
2.4.1 提高p型氮化鎵之電洞濃度 32
2.4.2 藉由表面處理減少表面蕭特基能障 33
2.4.3 使用適當之材料製作合金化的歐姆接觸層 35
2.5 高功率氮化鎵基的LED與其高反射且低電阻的P型氮化鎵歐姆接觸層之發展 36
2.5.1 高功率垂直結構LED (High power vertical structure LED) 39
2.5.2 高功率覆晶結構LED (High power flip-chip structure LED) 42
2.5.3 高反射且低接觸電阻p型氮化鎵歐姆接觸層(Highly reflective and low resistance ohmic contact to p-GaN) 43
第三章 研究方法與步驟 47
3.1 特徵接觸電阻量測與測試結構製備 47
3.1.1 p型氮化鎵晶片結構 47
3.1.2 特徵接觸電阻量測結構製作 48
3.1.3 高溫快速熱退火處理以及特徵接觸電阻計算 56
3.2 反射性量測與其測試樣品之製作 57
3.2.1反射性測試樣品之製備 57
3.2.2 高溫快速熱退火處理以及反射率量測 58
3.3 X光光電子能譜之縱深分析 58
3.3.1 測試樣品之製備 58
3.3.2 分析條件和方法 59
第四章 結果與討論 61
4.1 快速熱退火處理對接觸結構表面形態之影響 61
4.2 快速熱退火溫度與接觸結構表現之關係 65
4.2.1 快速熱退火溫度對特徵接觸電阻的影響 65
4.2.2 快速熱退火處理溫度對反射性的影響 68
4.2.3 接觸結構熱穩定性測試 70
4.3 接觸結構之XPS縱深分析 72
第五章 結論 75
參考文獻 77
參考文獻 [1] M. Asif Khan, A. Bhattarai, J. N. Kuznia, D. T. Olson, Appl. Phys. Lett, 63 (1993) 1214
[2] Shuji Nakamura, Masayuki Senoh, Takashi Mukai, 62 (1993) 2390
[3] Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Appl. Phys. Lett, 68 (1996) 3269
[4] X. Zhang, P. Kung, D. Walker, J. Piotrowski, A.Rogalski, A. Saxler, M. Razeghi, Appl. Phys. Lett, 67 (1995) 2028
[5] Schubert, Light-emitting diode, Cambridge University Press (2003)
[6] Ben G. Streetman, Sanjay Kumar Banerjee, Solid state electronic devices 6th edtion, Pearson education
[7] J. Bardeen, Phys. Rev, 71 (1947) 717
[8]周佳賢, 高度熱穩定的鎳/銀鋁合金薄膜應用在p型氮化鎵之歐姆接觸, 國立中央大學化學工程與材料工程研究所, 碩士論文(2006)
[9] F. A. Padovani, R. Stratton, Solid-state Electron, 9 (1966) 695
[10] Dieter K. Schroder, Semiconductor material and device characterization, IEEE Press John wiley & sons (2006)
[11] H.H. Berger, Solid-State Electron, 15 (1972) 145
[12] W. Shockley, R. M. Scarlett, Rep. No. AFAL-TDR-64-207, Air Force Avionics Lab (1964)
[13] J. H. Klootwijk, C. E. Timmering, Proc. IEEE 2004 Int. Conference on Microelectronic Test Structure, 17 (2004) 247
[14] Shuji Nakamura, Naruhito Ieasa, Masayuki Senoh and Takashi Mukai, Jpn. J. Appl. Phys, 31 (1992) 1258.
[15] Shuji Nakamura, Takashi Mukai, Masayuki Senoh, Naruhito Iwasa, Jpn. J. Appl. Phys, 31 (1992) 139.
[16] Yow-Jon Lin, Appl. Phys. Lett, 84 (2004) 2760
[17] Hiroshi Amano, Masahiro Kito, Kazumasa Hiramatsu, Isamu Akasaki, Jpn. J. Appl. Phys, 28 (1989) L2112.
[18] Hidenori Ishikawa, Setsuko Kobayashi, Y. Koide, S. Yamasaki, S.Nagai, J. Umezaki, M. Koike, Masanori Murakami, J. Appl. Phys, 81 (1996) 1315
[19] Jingxi Sun, K. A. Rickert, J. M. Redwing, A. B. Ellis, F. J. Himpsel, T. F. Kuech, Appl. Phys. Lett, 76 (2000) 415
[20] Jong Kyu Kim, Jong Lam Lee, Jae Won Lee, Hyun Eoi Shin, Yong Jo Park, Taeil Kim, Appl. Phys. Lett, 73 (1998) 2953
[21] Yow Jon Lin, Chang Da Tsai, Yen Tang Lyu, Ching Ting Lee, Appl. Phys. Lett, 77 (2000) 687
[22] Jin Kuo Ho, Charng Shyang Jong, Chien C. Chiu, Chao Nien Huang, Chin Yuen Chen, Kwang Kuo Shih, Appl. Phys. Lett, 74 (1999) 1275
[23]Li Chien Chen, Fu Rong Chen, Ji Jung Kai, Li Chang, J. Appl. Phys, 86 (1999) 3826
[24] X. Guo E. F. Schubert J. Appl. Phys, 90 (2001) 4191
[25]W. S. Wong, T. Sands, N. W. Cheung, Appl. Phys. Lett, 72 (1998) 599
[26] Chen-Fu Chu, Chang-Chin Yu, Hao-Chun Cheng, Chia-Feng Lin and Shing-Chung Wang, Jpn. J. Appl. Phys, 42(2003) L147
[27] Chen-Fu Chu, Fang-l Lai, Jung-Tang Chu, Chang-Chin Yu, Chia-Feng Lin, Hao-Chung Kuo, S. C. Wang, J. Appl. Phys, 95 (2004) 3916
[28] S. J. Chang, W. S. Chen, Y. C. Lin, C. J. Chang, T. K. Ko, Y. P. Hsu, C. F. Shen, J. M. Tasi, S. C. Shei, IEEE Transaction on advanced packaging, 29 (2006) 403
[29] June-O Song, Joon Seop Kwak, Yongjo Park, Tae-Yeon Seong, Appl. Phys. Lett, 86 (2005) 062104
[30] D. L. Hibbard, S. P. Jung, C Wang, D. Ullery, Y. S. Zhao, H. P. Lee, W. So, H Liu, Appl. Phys. Lett, 83 (2003) 311
[31]Ja-Yeon Kim, Seok-In Na, Ga-Young Ha, Min-Ki Kwon, ll-Kyu Park, Jae-Hong Lim, Seong-Ju Park, Min-Ho Kim, Dongyoul Choi, Kyeongik Min, Appl. Phys. Lett, 88 (2006) 043507
[32]Jun Ho Son, Gwan Ho Jung, Jong-Lam Lee, Appl. Phys. Lett, 93 (2008) 012102
[33]Jun Ho Son, Yang Hee Song, Hak Ki Yu, Jong-Lam Lee, Appl. Phys. Lett, 95 (2009) 062108
[34] S. K. Sharma, J. Spitz, Thin solid films, 65 (1980) 339
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