博碩士論文 973209012 詳細資訊




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姓名 林政勳(Jheng-syun Lin)  查詢紙本館藏   畢業系所 材料科學與工程研究所
論文名稱 應用於太陽光電之自潔性及低反射率之矽與矽鍺奈米孔洞陣列
(Self-cleaning and Low-refractive Si/SiGe Nanohole Arrays for Photovoltaic Applications)
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摘要(中) 表面粗糙化可以有效降低光反射以提高太陽電池之效率。本研究中,利用聚苯乙烯奈米球自組裝性質與反應性離子蝕刻(RIE)製程製備出有序排列的矽與矽鍺奈米孔洞陣列。金屬鎳沉積在經反應性離子蝕刻縮小的聚苯乙烯奈米球之基板上,而後將聚苯乙烯奈米球掀離而形成金屬鎳的奈米網狀陣列,其可提供反應性離子蝕刻矽與矽鍺的遮罩而製備出矽與矽鍺奈米結構。通入六氟化硫和氧的混合氣體之乾式蝕刻,藉由不同的蝕刻時間而產生不同形貌的矽與矽鍺奈米結構。
利用奈米球微影技術結合反應性離子蝕刻成功地製備出矽與矽鍺奈米孔洞陣列,再利用掃描式電子顯微鏡(SEM)觀察結構形貌之變化,並量測光反射與接觸角性質。
矽與矽鍺奈米結構有著低反射率以及光極化不敏感的抗反射性質,並且其結構可以增進材料表面疏水性(自潔效應)。接觸角遲滯現象證實接觸角持續 (CA-retention) 性質,其與表面粗糙度有關。
製作不同形貌的奈米結構應用於太陽電池的表面粗糙化,本研究的製程方法是低成本且有效率。
摘要(英) Dry etching plasma was optimized for surface textures. The surface roughness reduces the reflection of sunlight and enhances the efficiency of solar cells. The fabrication of well-ordered Si and SiGe nanohole arrays (NHAs) were obtained by self-assembly properties of polystyrene (PS) nanospheres and reactive ion etching (RIE) processes. The diameter of ordered hexagonal close-packed nanospheres in monolayer is 800nm. By controlling the size of PS nanospheres in RIE process, subsequently the metal was evaporated on the substrates. The PS nanospheres were lifted off and they provided masks suitable for a further RIE step to fabricate Si and SiGe nanostructures. The morphology of the Si and SiGe NHAs were controlled by duration of the dry etching with SF6/O2 plasma.
The morphology evolution, size and height of fabricated NHAs have been investigated by SEM. We also measured reflectance properties and contact angle (CA) behaviors of Si and SiGe nanostructures.
The Si and SiGe NHAs exhibit low-reflective, broadband and polarization-insensitive antireflection (AR) properties, and enhance the hydrophobicity. The CA hysteresis demonstrates the CA-retention property, as a function of surface roughness.
The fabricating methods reported here are low-cost and efficient for producing different shapes of nanostructures which can be use for surface textures in solar cells.
關鍵字(中) ★ 極化不敏感
★ 疏水性
★ 奈米孔洞陣列
★ 奈米球
★ 反應性離子蝕刻
★ 反射率
★ 接觸角
關鍵字(英) ★ polarization-insensitive
★ hydrophobicity
★ NHAs
★ nanosphere
★ RIE
★ CA
★ reflectance
論文目次 Abstract ...................................................................................................... I
Acknowledgement .................................................................................. III
Contents .................................................................................................. IV
Chapter 1 Introduction
1-1 Overview of Solar Cell ....................................................................... 1
1-2 Principles of Photovoltaic Devices .................................................... 3
1-2-1 Basic Theory ............................................................................. 3
1-2-2 Photocurrent ............................................................................. 4
1-2-3 Dark Current ............................................................................ 5
1-2-4 Open Circuit Voltage and Short Circuit Current ................. 8
1-2-5 Equivalent Circuit .................................................................. 10
1-2-6 Effects of Series Resistance and Shunt Resistance.............. 11
1-2-7 Conversion Efficiency of Solar cells ..................................... 12
1-3 Methods for Improving High Efficiency ........................................ 13
1-3-1 Antireflection Coating ............................................................ 14
1-3-2 Surface Texturing ................................................................... 16
1-3-3 Back-surface Field (BSF) ....................................................... 16
1-3-4 Surface Passivation ................................................................ 16
1-3-5 Spectral Response ................................................................... 17
1-3-6 Electrode Structure ................................................................ 18
1-3-7 Temperature Effects ............................................................... 18
1-4 Texturing............................................................................................ 18
1-4-1 Wet Etching ............................................................................ 18
1-4-2 Dry Etching ............................................................................. 19
1-5 Nanotechnology ................................................................................. 20
1-5-1 Self-assembly ........................................................................... 22
1-5-2 Nanospheres ............................................................................ 23
1-5-3 Nanosphere Lithography ....................................................... 25
1-6 Motivation ......................................................................................... 26
References ................................................................................................ 27
Chapter 2 Experimental Procedures and Measurements
2-1 Nanosphere Lithography ................................................................. 31
2-1-1 Preparation of Polystyrene Nanosphere Solution ............... 31
2-1-2 Self-assembled Polystyrene Nanosphere Arrays ................. 32
2-1-3 Shrinkage of Nanosphere ...................................................... 33
2-2 Metal Mask ........................................................................................ 35
2-3 Reactive Ion Etching ........................................................................ 37
2-4 Scanning Electron Microscope (SEM) Observation ..................... 38
2-5 Reflectivity ......................................................................................... 39
2-6 Contact Angle (CA) Measurements ................................................ 39
References ................................................................................................ 41
Chapter 3 Results and Discussion
3-1 Si Nanohole Arrays ........................................................................... 42
3-1-1 Reflectance Measurement ..................................................... 47
3-1-2 Angle of Incidence (AOI) Insensitive Reflection ................. 52
3-1-3 Contact Angles for Hydrophobicity ...................................... 55
3-1-3-1 Contact Angle Hysteresis ............................................. 59
3-2 SiGe Nanohole Arrays ...................................................................... 61
3-2-1 Reflectance Measurement ..................................................... 64
3-2-2 Angle of Incidence (AOI) Insensitive Reflection ................. 65
3-2-3 Contact Angles for Hydrophobicity ...................................... 67
3-2-3-1 Contact Angle Hysteresis ............................................. 69
References ................................................................................................ 72
Chapter 4 Conclusions
................................................................................................................... 74
Chapter 5 Future Prospects
................................................................................................................... 75
References ................................................................................................ 76
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指導教授 李勝偉(Sheng-wei Lee) 審核日期 2010-7-22
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