奈米結構化氧化鋁鋅薄膜之製作與光電性質研究

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姓名

董彥廷(Yen-ting Tung) 查詢紙本館藏

畢業系所

材料科學與工程研究所

論文名稱

奈米結構化氧化鋁鋅薄膜之製作與光電性質研究
(Study on Fabrication of Nanostructured Al-doped ZnO Films and Their Opto-electrical Properties)

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摘要(中)

本研究利用溶膠凝膠技術搭配旋轉塗佈法製備氧化鋁鋅（ZnO:Al）透明半導體薄膜，其實驗之進行大致可分為兩個部份，第一部分為溶劑的取代，文獻中常見的溶劑為乙二醇甲醚，但卻是環保署管制之二級毒化物，因此本研究擬以實驗室常見之乙醇作為溶劑，希望能在不影響其光、電性質之情況下取代以二醇甲醚。將乙二醇甲醚及乙醇兩種溶劑之前驅物溶膠，分別旋塗於基板上並於氧氣氛下施以600℃之退火處理，實驗中證實兩種溶劑系統所生成之薄膜，皆隨著鋁摻雜濃度的增加，其X光繞射分析可得知薄膜結晶性變差且晶粒尺寸縮小，並於紫外光-可見光光譜可發現光學吸收限有藍位移之趨勢（Burstein-Moss效應）。乙醇系統薄膜最低的片電阻為0.2MΩ/□（1% Al），在波長範圍為400-800 nm之平均光穿透率約84%（± 3%），而乙二醇甲醚系統則為0.83MΩ/□（2% Al），89%（± 3%）。
本研究之第二部份為將乙醇系統之溶膠（1% Al）分別塗佈於矽基奈米柱陣列以及矽基蜂窩狀奈米孔洞陣列上，並於氧氣氛下施以600℃之退火處理，雖然由TEM橫截面影像之觀察，薄膜皆並未能完整地填入結構內，但於光反射率之量測可得知薄膜在結構化矽基材上確實能有效地降低光反射，且在矽基奈米柱結構陣列上之ZnO:Al（1% Al）薄膜其光激發螢光強度將隨著結構的蝕刻秒數增加而上升。

摘要(英)

In this investigation, we synthesized the ZnO:Al transparent semiconductor thin film by accompanying spin-coating with sol-gel method. There are two parts in the experiments and the first one is substitution of the solvent. In references, the 2-methoxyethanol was usually used as the solvent but it is prohibited due to its toxicity. Therefore, we try to replace 2-methoxyethanol by ethanol and still keep the optical and electrical properties similarly. The sol of precursors of 2-methoxyethanol and ethanol were coated on substrates respectively and then annealed in oxygen atmosphere at 600℃. The results of XRD analysis indicated that the crystalline quality declined and the grain size decreased since the doped concentration of Al increased. Furthermore, the optical absorption edge showed blue-shift ( Burstein-Mossin effect) in the UV-visible spectra. The sheet resistance of the thin film which was synthesized by ethanol is 0.2MΩ/□（1% Al）and its average optical transmittance is 84% (± 3%) in the range of 400-800nm wavelength, on the other hand, the other’s are 0.83MΩ/□（2% Al）and 89% (± 3%) respectively.
The second part of the experiments was to coat the sol of precursor of ethanol on a nanorod arrays silicon substrate and a honeycomb-shaped nanohole arrays silicon substrate. Next, an annealing process was implemented in oxygen atmosphere at 600℃. Although the nanostructures could not be filled with the thin films according to the observation of cross-section TEM images. But we confirmed that the thin films on the nanostructured substrates could efficiently reduce the optical reflectance by measurements. Moreover, we discovered that the photoluminescence intensities of ZnO:Al (1% Al) thin film on the nanorod arrays silicon substrate increased with the etching time.

關鍵字(中)

★ 氧化鋁鋅
★ 溶膠凝膠法

關鍵字(英)

★ Al-doped ZnO
★ Sol-gel

論文目次

摘要 I
Abstract II
致謝 III
目錄 V
圖目錄 VII
表目錄 IX
第一章簡介與文獻回顧 1
1.1 前言 1
1.2 氧化鋅 1
1.2.1 氧化鋅之簡介 1
1.2.2 氧化鋅摻雜金屬離子 5
1.3 溶膠凝膠法 7
1.3.1 溶膠凝膠概論 7
1.3.2 溶膠凝膠法之原理 10
1.3.3 旋轉塗佈法 12
1.4 透明導電薄膜之導電機制 14
1.5 透明導電薄膜之光學性質 15
1.5.1 Burstein-Moss效應 17
1.6 反應性離子蝕刻 19
1.7 研究動機與實驗目的 19
第二章實驗步驟 21
2.1 實驗藥品、基材與儀器 21
2.2 實驗步驟 23
2.2.1 氧化鋁鋅溶膠之配製 24
2.2.2 以聚苯乙烯奈米球遮罩製備矽基奈米結構陣列 24
2.2.3 旋轉塗佈前基材清潔 27
2.2.4 氧化鋁鋅溶膠之塗佈與熱處理 27
2.3 實驗分析設備 28
2.3.1 四點探針 28
2.3.2 紫外光-可見光光譜儀 29
2.3.3 XRD繞射分析 30
2.3.4 掃描式電子顯微鏡 31
2.3.5 穿透式電子顯微鏡 31
2.3.6 光激發螢光原理 32
第三章結果與討論 34
3.1 不同溶劑製備ZnO:Al薄膜 34
3.1.1 ZnO:Al透明半導體薄膜晶體結構分析 34
3.1.2 ZnO:Al透明半導體薄膜之光、電特性 39
3.2 製備奈米結構化ZnO:Al薄膜 43
3.2.1 ZnO:Al薄膜旋塗於矽基奈米柱陣列 43
3.2.2 ZnO:Al薄膜旋塗於矽基蜂窩狀奈米孔洞陣列 47
第四章結論 50
參考文獻 51

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指導教授

李勝偉(Sheng-wei Lee)

審核日期

2010-8-26

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