單電子電晶體的熱電效應

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姓名

傅世豪(Shih-Hao Fu) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

單電子電晶體的熱電效應
(Thermoelectric Effect of Single-electron Transistors)

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摘要(中)

本論文理論性地探討單顆量子點崁入具低熱導率的奈米線，此奈米線外接電極，並計算其電導、熱導、熱電係數以及熱電優值(ZT)。我們利用多能階的安德森模型(Anderson model)來模擬單量子點傳輸的情形，在庫倫阻斷區域之電流與熱流公式可經由Keldysh Green function技術的推導而得。電子聲子交互作用產生的非彈性散射、缺陷和量子點大小的變化都將會明顯得抑制ZT值。而為了增加ZT值，降低晶格熱導是非常重要的。此外我們也發現調控閘極偏壓所造成的能階偏移對系統的ZT值影響很大。

摘要(英)

This thesis theoretically studies the electrical conductance, thermal conductance, thermal power, and figure of merit (ZT) of a single quantum dot (QD) embedded into a nanowire with low heat conductivity connected to electrodes. The multilevel Anderson model is used to simulate this quantum dot junction system. The charge and heat currents in the Coulomb blockade regime are calculated by the Keldysh Green function technique. The ZT values are seriously suppressed by the inelastic scattering effect arising from electron-phonon interactions, defects and QD size fluctuation. In the optimization of ZT, the reduction of lattice thermal conductance is important to enhance ZT values. We find that the system ZT values are sensitive to the detuning energy, which can be controlled by the gate voltage.

關鍵字(中)

★ 熱電材料
★ 單電子電晶體
★ 熱電優值
★ 量子點

關鍵字(英)

★ quntum dot
★ thermoelectric material
★ figure of merit
★ sigle-electron transistor

論文目次

目錄
摘要 I
Abstract II
誌謝 III
第一章導論 1
1-1 熱電材料起源 1
1-2 定義熱電優值 3
1-2-1 熱電優值定義式的由來 3
1-3 研究動機 5
1-3-1 韋德曼-法朗茲定律 6
1-3-2 熱電係數 7
1-3-3 聲子熱導 7
第二章 ZT的線性分析 8
2-1 系統模型 8
2-1-1 單一能階系統格林函數 11
2-1-2 多能階系統格林函數 12
2-1-3 偏壓對量子點裸能階修正 15
2-2 定義線性區間熱電優值的各種參數 16
第三章熱電效應的模擬 19
3-1 前言 19
3-1-1 考慮單能階與三能階系統的差異 20
3-2 熱電優值 22
3-2-1 熱電優值粗估 22
3-2-2 聲子輔助穿隧效應 23
3-2-3 絕緣層位障的影響 24
3-2-4 聲子熱導的影響 26
3-2-5 單電子電晶體的熱電優值模擬 27
3-3 調控閘極電位 29
第四章鍺量子點單電子電晶體的熱電效應 32
4-1 參雜半導體 32
4-1-1 施體重參雜之費米能階 34
4-1-2 受體重參雜之費米能階 37
4-2 鍺量子點單電子電晶體熱電優值預測 39
第五章結論 42
參考文獻 43

參考文獻

參考文獻：
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指導教授

郭明庭(David M.-T. Kuo)

審核日期

2010-7-12

推文