| 摘要(英) |
In this thesis, we design a 2-D device simulator which includes the impact-ionization model to simulate the avalanche breakdown. First, we discuss two device structures. One is cylindrical P-N junction and the other is plane and cylindrical P-N junction. We also simulate various junction depths and radiuses for studying the curvature effect on breakdown characteristics. Second, to explain about curvature effect on diode breakdown, we derive electric field and electric potential formula from Poisson’s equation at cylindrical coordinates by using semiconductor physics. Also, we analyze and improve the difference between analytical equation and numerical simulation to verify the validity of 2-D device simulator. Finally, in order to quickly verify the device structure and simulation results, we design a 2-D levelized indicator. The levelized indicator can be used to quickly check the 2-D simulation results of the above-mentioned two device structures. Besides, the levelized indicator is a very useful tool for user to obtain an overall 2-D distribution such as potential distribution.
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| 參考文獻 |
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