砷化銦/銻化鋁高電子遷移率場效電晶體之鈍化製程發展與元件特性研究

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：7

、訪客IP：3.143.23.176

姓名

何偉誌(Wei-Zhi He) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

砷化銦/銻化鋁高電子遷移率場效電晶體之鈍化製程發展與元件特性研究
(Passivation Process Development and Device Characterization for InAs/AlSb High Electron Mobility Transistors)

相關論文

★ 次微米氮化鎵電晶體之製程與特性分析	★ 氮化鋁鎵/氮化鎵高電子遷移率場效電晶體元件結構與鈍化方式對高頻率及高功率之特性分析
★ 砷化銦/銻化鋁金屬-氧化物-半導體高電子遷移率電晶體之發展	★ 砷化銦/銻化鋁高電子遷移率場效電晶體製程開發與元件特性之研究
★ 銻化銦鎵/銻化鋁高電洞遷移率異質接面場效電晶體之發展	★ 銻化物高電子遷移率場效電晶體之閘極微縮製程發展與元件特性研究
★ 砷化銦/銻化鋁高電子遷移率場效電晶體之次微米元件製程改善與元件衰化機構分析

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

[檢視]

[下載]

本電子論文使用權限為同意立即開放。
已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。
請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。

摘要(中)

本論文為利用砷化銦材料優異的高電子遷移率及優異電子飽和速度特性，發展低功率和高速的異質接面場效電晶體(HFET)。由於銻化物材料系統的化學穩定性並不好，在元件製作時容易引起磊晶材料衰化，因此我們將藉著改善磊晶材料的品質和發展鈍化製程，防止元件電性的衰化，最佳化其直流及高頻特性。
我們利用快速熱退火製程將歐姆接觸電阻降低至RC=0.06Ω-mm。閘極長度2μm的元件特性於汲極偏壓VDS=0.4V下，其汲極飽和電流為IDSS=650mA/mm及轉導增益為gm=1,223mS/mm，電流增益截止頻率與閘極長度乘積比高達fT×Lg=68GHz-μm。另外利用鈍化製程降低缺陷能態密度，在脈波電流-電壓量測分析中，以一階段鈍化元件的表面缺陷最不顯著，且具有低閘極漏電流特性和改善次臨限行為的Ion/Ioff =3831和S.S.=111mV/dec，元件的良率從5%提升至95%。最後，我們利用一階段鈍化製程，製作0.5μm的T型閘極元件，證明fT=93GHz和fmax=82GHz之高頻性能。

摘要(英)

This thesis develops low-power and high-speed heterpjunction field-effect transistors using InAs channels which have very high electron mobility and excellent peak velocity. Due to chemical instability of lattice-matched antimonides which easily degrade epitaxial materials, improvements of epitaxial quality and developments of passivation processes are performed to alleviate its effects on dc and rf performances.
Ohmic contacts are reduced as low as 0.06Ω-mm utilizing a rapid thermal annealing process. In a 2μm-gate-length device, drain current is 650mA/mm and transcondutance is 1,223mS/mm at VDS=0.4V. A product of cut-off frequency and gate length as high as 68 GHz-μm is achieved. In addition, an optimized passivation process is successfully developed to decrease trap density. In a pulsed I-V measurement, the charge trapping in a one-step passivated device is least pronounced and improved subthreshold characteristics of Ion/Ioff =3831 and S.S.=111mV/dec are demonstrated. Device yield is raised from 5% to 95%. Finally, a HEMT of a 0.5μm e-beaming writing T-gate shows excellent rf performance of fT=93GHz and fmax=82GHz using the developed one-step passivation approach.

關鍵字(中)

★ 鈍化製程
★ 砷化銦
★ 高電子遷移率

關鍵字(英)

★ high electron mobility
★ HFET
★ HEMT
★ InAs/AlSb
★ passivation

論文目次

摘要 I
Abstract IV
謝誌 V
目錄 VI
圖目錄 X
表目錄 XVI
第一章導論 1
1-1 砷化銦/銻化鋁之高速電子遷移率電晶體發展現況 1
1-2 掘入式閘極元件之發展現況 9
1-3 鈍化製程元件之發展 12
1-4 論文架構 15
第二章磊晶結構設計與製程發展 16
2-1 前言 16
2-2 磊晶結構設計與材料分析 16
2.2.1 砷化銦/砷化銦鋁(InAs/InAlAs)保護層磊晶結構 16
2.2.2 雙層保護層(double cap)磊晶結構 19
2-3 歐姆接觸電阻之發展 24
2.3.1 無摻雜砷化銦/砷化銦鋁磊晶結構 24
2.3.2 高摻雜砷化銦/砷化銦鋁磊晶結構 26
2.3.3高摻雜砷化銦鎵/砷化銦鋁磊晶結構 28
2-4 標準製程發展 29
2-5 鈍化層製程之發展 30
2.5.1 二階段鈍化層製程之發展 31
2.5.2 閘極後鈍化層製程之發展 33
2-6 電子束微影T型閘極元件製程之發展 34
2.6.1 次微米T型閘極製程的發展 34
2.6.2 次微米T型閘極元件製作 36
2-7 結論 37
第三章砷化銦/銻化鋁HFET之元件特性 38
3-1 前言 38
3-2 標準元件性能 38
3.2.1 砷化銦保護層元件 38
3.2.2 砷化銦鋁保護層元件 45
3-3 鈍化層發展元件性能 48
3.3.1一階段鈍化層之元件 48
3.3.2兩階段鈍化層之元件 51
3.3.3 閘極後鈍化製程之元件 54
3-4 掘入式閘極元件 59
3.4.1 高摻雜砷化銦元件 59
3.4.2 高摻雜砷化銦鎵元件 62
3-5 高性能小線寬元件 66
3.5.1 小線寬標準元件 66
3-6 結論 68
第四章討論 70
4-1 前言 70
4-2 元件特性的改善 70
4.2.2 捕捉缺陷能態對元件性能之影響 75
4.2.3 隨時間增加之元件特性變化 79
4-3 鈍化製程元件性能之討論 82
4.3.1 元件直流性能比較 82
4.3.2 鈍化元件之捕捉缺陷能態的分析 87
4.3.3 鈍化層對於衝擊離化之影響 92
4-4 結論 96
第五章結論與未來發展 97
參考文獻 100
附錄 104
附錄1 標準製程 104
附錄2 閘極後鈍化製程 108
附錄3 製程前鈍化製程 112
附錄4 掘入式閘極製程 117

參考文獻

[1]. L. D. Nguyen, L. E. Larson, U. K. Mishra, “Ultra-high speed modulation-doped field- effect transistors: a tutorial review,” Proc. IEEE, vol. 80, no. 4, pp. 494-518, Apr. 1992.
[2]. N. Moll, M. R. Hueschen, and A. Fischer-Colbrie, “Pulsed doped AlGaAs/InGaAs pseudomorphic MODFET’s,” IEEE Trans. Electron Devices, vol. 35, no. 7, pp. 878-886, Jul. 1988.
[3]. L. D. Nguyen, A. S. Brown, M. A. Thompson, and L. M. Jelloian, “50 nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors,” IEEE Trans. Electron Device., vol. 39, no. 9, pp. 2007-2014, Sep. 1992.
[4]. K. Shinohara, Y. Yamashita, A. Endoh, I. Watanabe, K. Hikosaka, T. Mimura, S. Hiyamizu and T. Matsui, “550 GHz pseudomorphic InP-HEMTs with reduced source-drain resistance,” in Proc. 61st Device Research Conference, pp. 145-146, Jun. 2003.
[5]. J. B. Boos, W. Kruppa, B. R. Bennett, D. Park, S. W. Kirchoefer., “AlSb/InAs HEMTs for low-voltage, high-speed applications,” IEEE Trans. Electron Devices, vol. 45, no. 9, pp. 1869–1875, Sep. 1998.
[6]. C. Nguyen, B. Brar, C. R. Bolognesi, J. J. Pekarik, H. Kroemer, and J. H. English, “Growth of InAs/AlSb quantum wells having both high mobilities and high electron concentrations,” J. Electron. Mat., vol. 22, no. 2, pp. 255-258, Jul. 1992.
[7]. C. A. Chang, R. Ludeke, L. L. Chang, L. Esaki, “Molecular-beam epitaxy (MBE) of In1-xGaxAs and GaSb1-yAsy,” Appl. Phys. Lett., vol. 31, no. 11, pp. 759–761, Dec. 1977.
[8]. M. Yano, Y. Suzuki, T. Ishii, Y. Matsushima, M. Kimata, ”Molecular Beam epitaxy of GaSb and GaSbxAs1-x,” Jpn. J. Appl. Phys., vol. 17, no. 12, pp. 2091–2096, May 1978.
[9]. R. Ludeke, “Electronic properties of (100) surfaces of GaSb and InAs and their alloys with GaAs,” IBM J. Res. Dev., vol. 22, no. 3, pp. 304–314, May 1978.
[10]. R. Tsai, M. Barsky, J. B. Boss, J. Lee, N. A. Papanicolaou, R.Magno, C. Namba, P. H. Liu, D. Park, R. Grundbacher and A. Gutierrez “Metamorphic AlSb/InAs HEMT for Low-Power, High-Speed Electronics,” in Proc. IEEE GaAs Dig., Nov. 2003.
[11]. G. Tuttle, H. Kroemer, J. H. English, “Electron concentrations and mobilities in AlSb/InAs/ AlSb quantum wells,” J. Appl. Phys., vol. 65, no.12, pp. 5239–5242, Feb. 1989.
[12]. G. Tuttle, H. Kroemer, J. H. English, “Effects of interface layer sequencing on the transport-properties of InAs/AlSb quantum wells evidence for antisite donors at the InAs/AlSb interface,” J. Appl. Phys., vol.67, no. 6, pp. 3032–3037, Nov. 1990.
[13]. C. R. Bolognesi, H. Kroemer, J. H. English, “Well width dependence of electrontransport in molecular-beam epitaxially grown InAs/AlSb quantum-wells,” J. Vac. Sci Technol. B, vol. 10, no. 2, pp. 877-879, Mar. 1992.
[14]. R. Venkatasubramanian, D. L. Dorsey, K. Mahalingam, ”Heuristic rules for group IV dopant site selection in III–V compounds,” J. Cryst. Growth. vol. 175, pp. 224–228, May 1997.
[15]. Y. Zhao, M. J. Jurkovic, W. I. Wang, “Kink-free characteristics of AlSb/InAs high electron mobility transistors with planar Si doping beneath the channel,” IEEE Trans. Electron Device, vol. 45, no. 1, pp. 341–342, Jan. 1998.
[16]. C. R. Bolognesi, M. W. Dvorak, D. H. Chow, “High-transconductance delta-doped InAs/ AlSb HFET’s with ultrathin silicon-doped InAs quantum well donor layer,” IEEE Electron Device Lett. vol. 19, no. 3, pp. 83–85, Mar. 1998.
[17]. B. R. Bennett, M. J. Yang, B. V. Shanabrook, J. B. Boos, D. Park, ”Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers,” Appl. Phys. Lett. vol. 72, no. 10, pp. 1193–1195, Jan. 1998.
[18]. C. R. Bolognesi, J. E. Bryce, D. H. Chow, “InAs channel heterostructurefield effect transistors with InAs/AISb short-period superlattice barriers,” Appl. Phys. Lett. vol. 69, no. 23, pp.3531–3533, Sep. 1996.
[19]. S. Subbanna, G. Tuttle, H. Kroemer, “N-type doping of gallium antimonide and aluminum antimonide grown by molecular-beam epitaxy using lead-telluride as a tellurium dopant source,” J. Electron. Mater. vol. 17, no.4, pp. 297–303, Dec. 1988.
[20]. B. R. Bennett, R. Magno, J. B. Boos, W. Kruppa, M. G. Ancona, “Antimonide-based compound semiconductors for electronic devices: A review,” Solid State Electron., vol.49, no. 12, pp. 1875-1895, Dec. 2005.
[21]. B. R. Bennett, R. Magno, and N. Papanicolaou, “Controlled n-type doping of antimonides and arsenides using GaTe,” J. Cryst. Growth, vol. 251, no. 1-4, pp. 532-537, Apr. 2003.
[22]. B. Y. Ma, J. Bergman, P. Chen, J. B. Hacker, G. Sullivan, G. Nagy, and B. Brar, “InAs/AlSb HEMT and its Application to Ultra-Low-Power Wideband High-Gain Low-Noise Amplifiers,” IEEE Trans. Microw. Theory Tech., vol. 54, no. 12, pp. 4448-4455, Dec. 2006.
[23]. B. Brar, “Impact ionization in InAs-AlSb heterostructure field-effect-transistors,” Ph.D. dissertation, UC Santa Barbara, 1995.
[24]. C. Kadow, M. Dahlstrӧm, J. U. Bae, H. K Lin, A. C. Gossard, M. J. W. Rodwell, B. Brar, G. J. Sullivan, G. Nagy and J. I. Bergman, “n+-InAs-InAlAs Recess Gate Technology for InAs-Channel Millimeter-Wave HFETs,” IEEE Trans. Electron Device, vol. 52, no. 2, pp. 151–158, Feb. 2005.
[25]. S. G. Choi, Y. H. Baek, J. H. Oh, M. Han, S. H. Bang, B. C. Jun, H. C. Park and J. K. Rhee, “Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT” in Millimeter Waves, GSMM Global Symposium, 2008.
[26]. J. B. Boss, B. R. Bennett, N. A. Papanicolaou, M. G. Ancona, J. G. Champlain, Y. C Chou, M. D. Lange, J. M. Yang, R. Bass, D. Park, and B. V. Shanabrook, “Sb-Based n- and p- Channel Heterostructure FETs for High-Speed, Low-Power Applications,” in IEICE Trans. Electron, vol. E91-C, no. 7, pp. 1050–1057, Jun. 2008.
[27]. C. Gatzke, S. J. Webb, K. Fobelets and R. A. Stradling, “In situ Raman spectroscopy of the selective etching of antimonides in GaSb/AlSb/InAs heterostructures,” Semicond. Sci. Technol. vol. 13, no. 4, pp. 399-403, Jan. 1998.
[28]. 余湘璘, “氮化鋁鎵/氮化鎵高電子遷移率場效電晶體元件結構與鈍化方式對高頻率及高功率之特性分析,” 碩士論文, 國立中央大學, 2009.
[29]. I. H. Tan, G. L. Snider, L. D. Chang and E. L. Hu, “A self-consistent solution of Schrödinger-Poisson equations using a nonuniform mesh,” J. Appl. Phys., vol. 68, no. 8 pp. 4071-4076, Oct. 1990.
[30]. J. A. Robinson, S. E. Mohney, J. B. Boos, B. P. Tinkham and B. R. Bennett, “Pd/Pt/Au ohmic contact for AlSb/InAs0.7Sb0.3 heterostructures,” Solild State Electronics, vol. 50, no. 3, pp. 429-432, Mar. 2006.
[31]. J. S. Yu, S. H. Kim and T. I. Kim, “PtTiPtAu and PdTiPtAu ohmic contacts to p-InGaAs,” in ISCS int. conf., pp. 175-178, Sep. 1997.
[32]. E. F. Chor, W. K. Chong and C.H. Heng, “Alternative (Pd, Ti, Au) contacts to (Pt, Ti, Au) contacts for In0.53Ga0.47As,” J. Appl. Phys., vol. 84, no. 5, pp. 2977-2979, Jun. 1999.
[33]. A. Kztz, S. Nakahara, W. Savin, and B. E. Weir, “Microstructure and contact resistance temperature dependence of Pt/Ti ohmic contact to Zn-doped GaAs,” J. Appl. Phys., vol. 68, no. 8, pp. 4133-4140. Jun. 1990.
[34]. P. C. Chao, P. M. Smith, S. C. Palmateer and J. C. M. Hwang, “Electron-beam fabrication of GaAs low-noise MESFET’s using a new trilayer resist technique,” IEEE Trans. Electron Device, vol. 32, no. 6, pp. 1042-1046, Jun. 1985.
[35]. T. Enoki, Y. Ishii, T. Tamamura, “T-gate process and delay time analysis for sub-1/4-μm-gate InAlAs/InGaAs HEMT’s,” in Proc. IEEE Int. Conf. InP and Related Mater., pp. 371-376, Apr. 1991.
[36]. Y. Todokoro, “Double-layer resist film for submicrometer electron-beam lithograph,” IEEE Trans. Electron Device, vol. 27, no. 8, pp. 1443-1448, Aug, 1980.
[37]. J. B. Boss, B. R. Bennett, N. A. Papanicolaou, M. G. Ancona, J. G. Champlain, Y. C. Chou, M. D. Lange, J. M. Yang, R. Bass, D. Park and B. V. Shanabrook, “Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications,” in IEICE Trans. Electron, pp. 159-162, Jul. 2008.
[38]. T. Suemitsu, H. Yokoyama, T. Ishii, T. Enoki, G. Meneghesso and E. Zanoni, “30-nm Two-Step Recess Gate InP-Based InAlAs/InGaAs HEMTs” IEEE Trans. Electron Device, vol. 49, no. 10, pp. 1694-1700, Oct. 2002.
[39]. G. Verzellesia, G. Meneghessob, A. Chinia, E. Zanonib and C. Canalia, “DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues” Microelectronics Reliability, vol. 45, no. 9-11, pp1585–1592, Sep/Nov. 2005.
[40]. C. Charbonniaud, S. De Meyer, R. Quéré, JP. Teyssier, “Electrothermal and trapping effects characterisation of AlGaN/GaN HEMTs,” in 11th GAAS Symposium-Munich, pp. 201-204, Agu. 2003.
[41]. G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, U. K. Mishra, C. Canali and E. Zanoni, “Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs,” IEEE Trans. Electron Device, vol. 51, no. 10, pp. 1554-1561, Oct. 2004.
[42]. Y. C. Chou, J. M. Yang, M. D. Lange, S. S. Tsui, D. L. Leung, C. H. Lin, M. Wojtowicz and A. K. Oki, “DEGRADATION MECHANISMS OF 0.1 μm AlSb/InAs HEMTS FOR ULTRALOW-POWER APPLICATIONS” in 46th IRPS, pp. 436-440, Apr. 2008.
[43]. E. J. Miller, X. Z. Dang and E. T. Yu, “Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors,” J. Appl. Phys., vol. 88, no. 10, pp. 5951-5958, Aug. 2000.
[44]. W. S. Tan, P. A. Houston, P. J. Parbrook, D. A. Wood, G. Hill, and C. R. Whitehouse. “Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors,” Appl. Phys. Lett., vol. 80, no. 17, pp. 3207-3209, Feb. 2002.
[45]. X. Z. Dang, R. J. Welty, D. Qiao, P. M. Asbeck, S. S. Lau, E. T. Yu, K. S. Boutros and J. M. Redwing, “Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET,” IEEE Electron Lett., vol. 35, no.7, pp. 602-603, Apr. 1999.

指導教授

林恒光(Heng-Kuang Lin)

審核日期

2010-8-10

推文