博碩士論文 975201063 詳細資訊




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姓名 吳政耀(Zheng-yao Wu)  查詢紙本館藏   畢業系所 電機工程學系
論文名稱 具有大面積且在高靈敏度、低暗電流操作下具有頻寬增強效應的10 Gbit/sec平面式 InAlAs 累增崩潰光二極體
(10 Gbit/sec Planar InAlAs Avalanche Photodiodes with Large Active Area and Bandwidth Enhancement Effect under High-Sensitivity Operation Mode)
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摘要(中) 我們提出一個新的平面型InAlAs分離式吸收、傳輸、電荷、累增之累增崩潰光二極體(SATCM APD)結構。在傳統的分離式吸收、電荷、累增之累增崩潰光二極體(SACM APD)結構中插入了一層InP傳輸層,藉此我們可以在0.9Vbr的操作下觀察到一3-dB頻寬增強現象,且可以降低RC頻寬限制和二次電洞傳輸時間兩者之間的利弊關係。因此,我們可以將我們提出的SATCM APD的主動區的直從典型的10Gbit/sec APD 的30?m 增加到40?m或50?m而仍然能維持在10Gbit/sec的高速操作。
除此之外,由於我們的SATCM APD 結構中的厚空乏區(~2.5?m)和適當的電荷層摻雜濃度,我們可以在達到擊穿電壓(~18V)時,就擁有接近2的增益,在元件發生崩潰之前,有接近20伏的操作電壓範圍。使用我們提出的SACTM APD 結構,在主動區直徑為40?m or 50?m時,可以成功達到在0.9Vbr (~39V) 操作下,有頻寬增強的現象和可接受的低暗電流(~50nA);而在10Gbit/sec 操作時,有-23dBm的靈敏度。
摘要(英) We demonstrate a novel type of planar InAlAs based separated absorption, transport, charge, and multiplication (SATCM), avalanche photodiode (APD) structure. By inserting an additional InP transport layer in the traditional InAlAs based SACM-APD structure, a strong 3-dB bandwidth enhancement (BE) phenomenon under 0.9 breakdown voltage (0.9Vbr) operation has been observed, which greatly releases the trade-off between RC-limited bandwidth and secondary-hole transport time. Through the use of such phenomenon, we can thus increase the active diameter of our SATCM-APD from 30?m, which is the typical size of 10Gbit/sec APD, to around 50 or 40?m and sustain its capability for 10Gbit/sec high-speed operation with a great improvement in alignment tolerance.
Furthermore, due to a thick depletion layer (~2.5?m) in our SATCM-APD structure, by properly optimizing the charge layer doping density, we can achieve a multiplication gain around 2 at punch-through voltage (~18V) with a 20V operation voltage window till breakdown occurs. Under 0.9Vbr (~39V) operation with BE phenomenon, a reasonable dark current (~50nA) and sensitivity (-23dBm) at 10Gbit/sec operation by use of our SATCM-APD with a 40 or 50?m active diameter has been successfully achieved.
關鍵字(中) ★ 累增崩潰光二極體 關鍵字(英) ★ avalanche photodiode
論文目次 Abstract i
摘要 ii
致謝 iii
目錄 v
圖目錄 viii
表目錄 xx
第一章 序論 1
§1.1 累增崩潰光二極體與PIN光二極體 1
§1.2 傳統的PIN光二極體 2
§1.3 傳統的累增崩潰光二極體 5
§1.4 分離式吸收、電荷、累增之累增崩潰光二極體(SACM APD) 8
§1.5 InP SACM累增崩潰光二極體 9
§1.6 InAlAs SACM累增崩潰光二極體 11
§1.7 論文動機與架構 15
第二章 累增崩潰光二極體之設計與製作 16
§2.1 累增崩潰光二極體之設計與模擬 16
§2.2 累增崩潰光二極體之製程 26
第三章 累增崩潰光檢測器之量測與結果討論 38
§3.1 Heterodyne-Beating 量測系統之架設 38
§3.2 量測結果 39
第四章 結論與未來研究方向 46
§4.1 結論 46
§4.2 未來研究方向 47
參考文獻 49
附錄 51
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指導教授 許晉瑋(Jin-wei Shi) 審核日期 2010-7-28
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