利用鋅擴散方式在半絕緣(GaAs)基板上製作可室溫操作、高速且低漏電流的InAs光檢測器

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姓名

黃柏融(Bo-Rung Huang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

利用鋅擴散方式在半絕緣(GaAs)基板上製作可室溫操作、高速且低漏電流的InAs光檢測器
(InAs Photodiode on Semi-Insulating GaAs Substrate with Zn-Diffusion Guard-Ring for Room Temperature High-Speed and Low Dark Current Performance)

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摘要(中)

InAs這種材料由於本身擁有超快的電子遷移率且截止頻率可以到達3.4μm，因此非常適合應用於遠紅外線波長的超高速光檢測器。然而，之前的應用都是製作於導電的InAs基板上，這樣會產生一個巨大的寄生電容，而且會限制光檢測器的速度表現。此外，在室溫操作下會有嚴重的表面態和暗電流產生。因此，在這篇論文中我們展示了一個成長在半絕緣基板(GaAs)上的InAs高速光檢測器，而且利用鋅擴散的方式來降低漏電流。在室溫和低偏壓(-0.2V)操作下，這個新穎的光檢測器3-dB頻寬可以達到20GHz，且擁有合理的暗電流密度(11A/cm2)。

摘要(英)

InAs is an attractive material system for fabricating high-speed photodiodes in far-infrared wavelengths due to its extremely high electron mobility and a cut-off frequency as long as around 3.4μm. However, the reported InAs PD is usually grown on the conductive InAs substrate, which should result in a significant parasitic capacitance and further limit the speed performance of PD. In addition, the serious surface state and huge leakage current of InAs based PDs at RT operation is usually observed. In this paper, we demonstrated a novel high-speed InAs photodiode (PD), which was grown on semi-insulating (S.I.) GaAs substrate with the Zn-diffusion guard ring to suppress the leakage current. Such novel PD exhibits a 3-dB optical-to-electrical (O-E) bandwidth as wide as 20GHz, a reasonable dark current density (11A/cm2), under a small reverse bias voltage (-0.2V) and RT operation.

關鍵字(中)

★ InAs光檢測器
★ 鋅擴散

關鍵字(英)

★ InAs photodiode
★ Zinc diffusion

論文目次

目錄
摘要 i
Abstract ii
致謝 iii
目錄 v
圖目錄 vii
表目錄 xi
第一章序論 1
§1.1 簡介 1
§1.2 量子串接式雷射之發展與應用 3
§1.3 窄能隙半導體光檢測器 7
§1.4 各種降低漏電流的方法比較 11
§1.5 論文動機與架構 18
第二章 InAs光檢測器原理 20
§2.1 傳統P-I-N光檢測器工作原理 20
§2.2 InAs材料介紹 22
§2.3 InAs光檢測器之磊晶層設計 25
第三章 InAs光檢測器之製程 32
§3.1 InAs光檢測器之鋅擴散製程 32
§3.2 InAs光檢測器之Gate controlled製程 43
第四章鋅擴散InAs光檢測器之量測與結果討論 48
§4.1 I-V 量測結果 48
§4.2 Heterodyne-Beating 量測系統之架設 51
§4.3 頻寬量測結果 52
第五章結論與未來研究方向 59
參考文獻 60
附錄1 62
附錄2 ...........................................66
圖目錄
圖1-1 (a)(b)能帶躍遷方式圖................................4
圖1-2-1各時期所研究的代表材料............................7
圖1-2-2紅外線檢測器其波長對光譜靈敏度的曲線圖............7
圖1-3晶格常數對能隙圖....................................8
圖1-4-1 300K下泡硫化銨I-V圖.............................12
圖1-4-2 77K下泡硫化銨I-V圖.............................12
圖1-4-3 (a) Unpassivated I-V圖 (b) Passivated I-V圖........13
圖1-4-4磊晶表...........................................14
圖1-4-5元件側視圖.......................................14
圖1-4-6 Gate controlled I-V圖............................15
圖1-4-7鋅擴散區域.......................................16
圖1-4-8溫度和時間對漏電流的影響.........................16
圖1-4-9擴散時間對深度圖.................................17
圖2-1傳統P-I-N 光檢測器結構圖...........................20
圖2-2-1 InAs的能帶圖與載子濃度..........................24
圖2-2-2 電場和電子飄移速度關係圖(77K) ...................24
圖2-3-1 單載子傳輸光檢測器與傳統P-I-N光檢測器空間電荷屏蔽效應.....................................................26
圖2-3-2 元件橫截面圖.....................................28
圖2-3-3 (a) AA’方向在-0.8V之能帶和電場分布圖 (b) BB’方向之電場分布圖............................................28、29
圖2-3-4 AA’方向在-3V之能帶和電場分布圖. ..................29
圖2-3-5 InAs的費米能階...................................30
圖2-3-6 InP的費米能階....................................30
圖3-1-1 中心蝕刻5000Å...................................33
圖 3-1-2 以氫氧焰封管示意圖...............................34
圖 3-1-3 Zn擴散區域.......................................35
圖3-1-4 陽極金屬.........................................36
圖3-1-5 主動區內溝槽蝕刻.................................37
圖 3-1-6 主動區蝕刻.......................................38
圖 3-1-7 陰極金屬.........................................39
圖 3-1-8 Isolation........................................40
圖 3-1-9 平坦化製程.......................................41
圖3-1-10 金屬墊..........................................42
圖3-1-11 成品俯視圖......................................42
圖3-2-1 陽極金屬.........................................43
圖3-2-2 主動區蝕刻.......................................43
圖3-2-3 陰極金屬.........................................44
圖3-2-4 元件區蝕刻.......................................44
圖3-2-5 保護層...........................................45
圖3-2-6 側壁電極.........................................45
圖3-2-7 平坦化製作.......................................46
圖3-2-8 金屬墊製作.......................................46
圖3-2-9 Gate controlled layout圖.........................47
圖4-1-1 Si3N4保護層I-V圖.................................48
圖4-1-2 硫化銨保護層I-V圖...............................49
圖4-1-3 硫化鋅保護層I-V圖...............................49
圖4-1-4 Gate Controlled I-V圖............................50
圖4-1-5 鋅擴散I-V比較圖.................................50
圖4-2 Heterodyne-Beating system 量測架設示意圖...........51
圖4-3-1 (a)(b)Device A和B在不同偏壓下之頻率響應之比較...53
圖4-3-2 InAs光檢測器之二埠等效電路模型...................54
圖4-3-3 (A-F)不同偏壓下的模擬和量測結果..............55、56
圖4-3-4等效電路模擬和Matlab模擬的內部載子傳輸時間.......57
圖4-3-5載子分布圖.......................................57
圖4-3-6 (a-d)元件A和B之量測與模擬結果...................58
表目錄
表1-1紅外光譜區..........................................2
表1-2各材料的基本物理特性................................9
表1-3擴散時間對深度表...................................17
表2-1 InAs在室溫下的基本特性.............................23
表2-2 磊晶結構層.........................................31
表3-1 HDP Recipe.........................................38
表4-1 在等效電路中模擬過程所使用的元素之數值與物理意義...54

參考文獻

參考文獻
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指導教授

許晉瑋(J.-W. Shi)

審核日期

2010-7-27

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