博碩士論文 982206017 詳細資訊




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姓名 張彥中(Yen-chung Chang)  查詢紙本館藏   畢業系所 光電科學與工程學系
論文名稱 具三維光路之光連接發射端模組
(Transmitting Part of Optical Interconnect Module with Three-Dimensional Optical Path)
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摘要(中) 在本論文中,提出並驗證「具三維光路之光連接發射端模組」之研究。此模組架構是採用雷射與波導異側之架構,由面射型雷射出光穿透厚度為 500 μm的 SOI基板,再經由 45°矽基微反射面進入波導。藉由此方式可分別獨立電子元件與光子元件的製程,又可將電子元件與光電調製器、波導等光子元件整合,以達到光電模組高積體化、高效能的表現。本模組電子元件層包含高頻傳輸線、面射型雷射和金錫焊料;光子元件層則包含 45°微反射面和梯形脊狀波導。利用雙面對準之機制將電子元件層和光子元件層整合至 SOI矽晶圓兩側。
而模組末端乃利用多模光纖作為接收與傳輸。其光纖與模組間光學耦合效率為 -8.09 dB,而效率損耗 1 dB時在水平方向與垂直方向之位移容忍值分別為 30 μm及 19 μm。對於高頻研究方面,本研究採用低阻值 (1 - 10 ohm-cm)之 SOI矽晶圓製作高頻傳輸線並量測其高頻傳輸特性。此模組在 2.5 Gbps的操作速度時,上升與下降時間差異並不大;眼圖訊號在其眼睛邊際 (Eye margin)內是非常乾淨,且眼高及眼寬分別為 34 mV與 350 ps,由此我們可再次驗證此模組對於 2.5 Gbps的訊號傳遞是具一定可行性。
摘要(英) In this thesis, transmitting part of optical interconnect module with three-dimensional optical Path is proposed. In this module, the laser and waveguide are on the different sides of SOI. The light is emitted from vertical cavity surface emitting laser (VCSEL). The light of laser passes through 500μm SOI and couples into ridge waveguide by 45 degree micro-reflector. By this way, the fabrication of electronic-device part and photonic-device part could be separated. The electronic-device, optical modulators, and waveguide could be combined. Therefore, photoelectric module could be highly density integrated and efficient energy. This module contains electronic-device layer and photonic-device layer. The high-frequency transmission line, VCSEL, and Au/Sn bonding pad are fabricated on the electronic-device layer. The 45 degree micro-reflector and trapezoidal ridge waveguide are fabricated on the photonic-device layer. Using the double-side alignment technology to combine the electronic-device layer and photonic-device layer on the SOI front and back sides.
To assess optical characteristic of optical connector, the multi-mode fiber is used to measure the optical level and degradation 1-dB tolerance of module in this research. The optical coupling is -8.09dB. The degradation 1-dB tolerances are 30μm and 19μm. Using low-resistivity SOI wafer (1 - 10 ohm-cm) to confirm the high frequency of this module and fabricate transmission line. This module in the operating speed of 2.5 Gbps, the rise and fall time is not much difference; eye signals in the eye margin (Eye margin) is very clean inside, and the eye height and eye width were 34 mV and 350 ps, thus, we can once again verify this module for the 2.5 Gbps signal transmission is a certain feasible.
關鍵字(中) ★ 三維
★ 光連接
關鍵字(英) ★ Optical Interconnect
★ Three-Dimensional
論文目次 摘要 II
Abstract III
目錄 IV
圖目錄 VI
表目錄 X
第一章 緒論 1
1-1 前言 1
1-2 研究動機與目的 4
第二章 具三維光路之光連接發射端模組設計 6
2-1 具三維光路之光連接發射端模組之波導、45°反射面尺寸架構及高頻傳輸線設計 7
2-1.1 SOI 規格之評估 7
2-1.2 具三維光路之光連接發射端模組之光波導結構設計 11
2-2 具三維光路之光連接發射端模組之光學訊號準位模擬分析 13
2-3 具三維光路之光連接發射端模組之高頻傳輸線模擬 19
第三章 具三維光路之光連接發射端模組製程開發 22
3-1 具三維光路之光連接發射端模組之光波導製作 22
3-2 具三維光路之光連接發射端模組之高頻傳輸線製作與金錫合金焊料製程 27
3-3 面射型雷射之覆晶封裝製程 32
第四章 具三維光路之光連接發射端模組量測 34
4-1 具三維光路之光連接發射端模組光耦合效率量測 34
4-2 具三維光路之光連接發射端模組之高頻特性量測 39
第五章 結論與未來展望 49
參考文章 51
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指導教授 伍茂仁(Mount-Learn Wu) 審核日期 2011-7-5
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