電化學沉積法製備ZnO:Al奈米柱陣列結構及其性質研究

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姓名

林俊甫(Chun-fu Lin) 查詢紙本館藏

畢業系所

化學工程與材料工程學系

論文名稱

電化學沉積法製備ZnO:Al奈米柱陣列結構及其性質研究
(Fabrication of large-area ZnO:Al nanostructure arrays by electrodeposition and their properties)

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摘要(中)

本研究利用射頻磁控濺鍍系統沉積ZnO:Al透明導電薄膜做為晶種層，成功地以電鍍法成長出一系列長短寬度可調變之ZnO:Al 奈米柱陣列，並針對其晶體結構、表面形貌、光電性質及表面親疏水性質進行一系列的深入觀察與分析，並找出成長大面積ZnO:Al 奈米柱陣列之最佳製程參數。本研究也首度結合奈米球微影技術與電鍍製程，成功地在ZnO:Al透明導電薄膜的表面製備出大面積且尺度大小可調變碗形-蜂巢狀規則有序之ZnO:Al新穎雙奈米結構。而此種新穎ZnO:Al奈米結構陣列在400 nm - 800 nm 波長之穿透率皆可＞80%，且在可見光波長範圍最高平均霧度可達27.6%，遠大於平整ZnO:Al薄膜之平均霧度 ( 約0.56 % ) ，在光捕捉效率提昇上效果十分顯著。此相關實驗結果，相信將可提供未來在太陽能光電元件製程開發及設計時之參考。

摘要(英)

In this study, ZnO:Al ( AZO ) transparent conducting oxide thin films were deposited on glass by a RF sputtering system to serve as the seed layer for the electrodeposition of AZO nanorods. Large-area AZO nanorod arrays were prepared in the optimal electrodeposition conditions. The microstructue, surface morphology, and physical properties of the AZO nanorods have been investigated. Furthermore, bowl-like AZO nanorod structures were successfully fabricated on AZO films by using nanosphere lithography combined with the electrodeposition technique. The size and periodicity of bowl-like AZO nanorodstructures can be controlled by turning the diameter of nanosphere and the electrodeposition conditions. In the optimum conditions, the total transmittance of the bowl-like AZO nanorods sample was higher than 80 % in the wavelength ranges of 400-800 nm. In addition, the obtained bowl-like AZO nanostructures were found to be very effective in light trapping. The average HAZE of the bowl-like AZO nanorods sample in the range of 400-800 nm is 27.6 %, which is higher than that of the AZO thin films samples ( ~0.56 %) . Since the size and periodicity of bowl-like AZO nanostructures can be readily controlled by turning the diameter of nanosphere and the electrodeposition conditions, the approach presented here can be used to fabricate a variety of AZO nanostructure arrays to enhance the light trapping effects.

關鍵字(中)

★ 氧化鋅
★ 電鍍

關鍵字(英)

★ AZO
★ ZnO

論文目次

目錄.....................................................Ⅰ
第一章簡介與文獻回故....................................Ⅱ
1-1 前言..................................................1
1-2 太陽能電池............................................2
1-2-1 太陽能電池..........................................2
1-2-2 Ⅲ-Ⅴ族太陽能電池 ..................................3
1-2-3 染料敏化太陽能電池..................................3
1-2-4 矽晶太陽能電池......................................4
1-3 透明導電氧化物........................................5
1-3-1 透明導電薄膜........................................6
1-3-2 透明導電金屬氧化物薄膜導電機制......................6
1-3-3 氧化銦薄膜..........................................8
1-3-4 氧化錫薄膜..........................................8
1-3-5 氧化鋅薄膜..........................................8
1-3-6 氧化鋅摻雜鋁的影響.................................10
1-4 一維ZnO奈米線成長機制與製備方法......................11
1-4-1 氣-液-固成長奈米線機制........... .................12
1-4-2 氣-固成長奈米線機制................................12
1-4-3 氧化鋅摻雜鋁奈米線製備方法.........................13
1-4-4 電化學沉積AZO奈米線合成方法與理論基礎..............14
1-5 奈米球微影術.........................................15
1-5-1 微影術簡介.........................................15
1-5-2 奈米球自組裝技術...................................16
1-5-3 利用奈米球微影術製備規則排列類奈米結構.............16
1-6 研究動機與實驗目的...................................17
第二章實驗步驟...........................................19
2-1 實驗步驟.............................................19
2-1-1 實驗試片前處理.....................................19
2-1-2 濺鍍法製備ZnO:Al透明導電薄膜.......................19
2-1-3 電化學沉積溶液配製.................................20
2-1-4 電化學沉積法製備ZnO:Al奈米線.......................20
2-1-5 電化學沉積法結合奈米球微影術製備ZnO:Al雙奈米結構...21
2-2 實驗設備.............................................21
2-2-1 濺鍍系統...........................................21
2-2-2 電化學沉積設備.....................................22
2-2-3 真空退火系統.......................................22
2-2-4 高密度電漿蝕刻機...................................22
2-3 實驗分析設備.........................................23
2-3-1 四點探針...........................................23
2-3-2 紫外光-可見光光譜儀................................24
2-3-3 XRD 繞射分析.......................................24
2-3-4 原子力顯微鏡.......................................25
2-3-5 掃描式電子顯微鏡...................................25
2-3-6 穿透式電子顯微鏡...................................25
2-3-7 高分辨穿透式電子顯微鏡與能量散布光譜儀.............26
2-3-8 X-Ray 光電子能譜儀.................................26
2-3-9 影像式接觸角量測儀.................................27
2-3-10 電性分析儀........................................27
第三章結果與討論........................................28
3-1 濺鍍法製備ZnO:Al透明導電薄膜晶種層與晶體結構鑑定.....28
3-1-1 濺鍍法製備ZnO:Al透明導電膜之表面分析與相鑑定.......28
3-1-2 ZnO:Al 透明導電薄膜真空熱處理前後特性分析..........29
3-2 電化學法沉積ZnO:Al奈米線之製備與晶體結構鑑定.........32
3-2-1 電流密度對於電化學沉積製備ZnO:Al奈米線之變化.......32
3-2-2 電鍍時間對於電化學法製備ZnO:Al奈米線之變化.........35
3-2-3 電化學沉積ZnO:Al奈米線機制與鑑定...................37
3-3 ZnO:Al奈米結構光暗電性I-V分析........................41
3-4 大面積規則排列ZnO:Al雙奈米結構之製備與分析...........42
3-4-1 ZnO:Al 透明導電薄膜基材上製備規則奈米球模板陣列....42
3-4-2 奈米球微影術結合電化學沉積製備ZnO:Al雙奈米結構及其特性分析...................................................43
3-4-3 二維ZnO:Al雙奈米結構之光學特性分析.................45
3-5 ZnO:Al奈米結構之表面性質探討.........................47
第四章結論與未來展望....................................49
4-1 結論.................................................49
4-2 未來與展望...........................................51
4-2-1 太陽能電池前電極...................................51
4-2-2 ZnO:Al發光元件與氣體感測器.........................51
參考文獻.................................................52
表目錄...................................................62
圖目錄...................................................65

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指導教授

鄭紹良(Shao-Liang Cheng)

審核日期

2011-8-26

推文