以RTP硒化法探討CIS薄膜及元件特性之研究

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姓名

彭萬軒(Wan-Hsuan Peng) 查詢紙本館藏

畢業系所

光機電工程研究所

論文名稱

以RTP硒化法探討CIS薄膜及元件特性之研究
(Investigation of CuInSe2 thin films and solar cells prepared by rapid selenization process)

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摘要(中)

本論文以硒化法來製備CIS薄膜，在製備銅銦金屬前驅物薄膜部分，分別使用了三個不同元素比例的銅銦合金靶材，其銅與銦之原子百分比分別為9:11 at% (Cu/In≒0.82)、1:1 at% (Cu/In=1)、11:9 at% (Cu/In≒1.22)進行比對研究，鍍製成銅銦金屬前驅物薄膜的原子比例分別是0.77、0.88、1.27。Se的來源為熱蒸鍍一層Se薄膜在銅銦金屬前驅物上面，再搭配二階段RTP硒化製程，使得CIS薄膜可快速完成硒化反應。
本論文著重於研究不同原子比例的銅銦前驅物薄膜與其製作成CIS薄膜之特性，實驗結果發現，只有0.88比例的銅銦前驅物薄膜才能製作出完整且可堆疊成元件的CIS薄膜，此結果受到薄膜之晶相以及組成比例的影響。
以SLG基板/Mo/p-CIS/CdS/ZnO/AZO結構為元件，並進行效率量測。元件在大氣環境下加熱至150oC，時間維持30分鐘之退火過程，效率較未退火前的元件(0.35%)提升不少(0.8%)；但元件經過第二次退火加熱至200oC，時間維持30分鐘後，效率反而下降(0.26%)，甚至較未退火前的元件還低。由實驗證實，元件經過溫度150 oC，時間30分鐘之退火條件，可使元件效率提升。

摘要(英)

In this thesis, CIS thin films were prepared by selenization method. The research used three different element ratio of Cu-In alloy target for deposition of copper-indium metal precursor, they were 9:11 at%,1:1 at%, 11:9 at% and the corresponding precursor films with Cu/In ratios of 0.77, 0.88, 1.27, respectively. The Se layer was evaporated on top of the precursor films and the CIS thin films were accomplished by using two-stage RTP process.
This research investigated the characteristics of different atomic ratio of copper-indium metal precursor films and CIS solar cells. It was found that only Cu/In ratio 0.88 of precursor film was suitable to fabricate the CIS thin film and solar cell, this result was affected by crystal phase and Cu/In ratios of the precursor films.
And this thesis used the soda-lime glass(SLG) substrates to manufacture SLG/Mo/p-CIS/CdS/ZnO/AZO thin film solar cell. The performance was measured before and after sequence of post-annealing treatment in the atmospheric environment. In this thesis, conditions of first post-annealing treatment on CIS cell was 150oC with 30min holding time, then second post-annealing treatment was 200oC with 30min holding time.The I-V curve results show that post-annealing treatment could significantly improve the short-circuit current, fill factor and conversion efficiency (form 0.35% to 0.85%) at temperature of 150oC for 30min, but the open-circuit voltage short-circuit current, fill factor and efficiency (form 0.85% to 0.26%) at temperature of 200oC for 30min.

關鍵字(中)

★ 快速熱處理
★ 銅銦硒薄膜
★ 硒化法

關鍵字(英)

★ RTP
★ selenization
★ CIS thin films

論文目次

第一章諸論 1
1.1 前言 1
1.2 CIS薄膜特性 6
1.3 元件結構設計 11
1.4 基板與各層薄膜功能之需求 11
第二章文獻回顧 21
2.1 CIS太陽能電池發展 21
2.2 CIS薄膜製備方式 23
2.3研究動機與目的 27
第三章薄膜量測儀器 30
3.1 X-ray繞射儀 (X-ray Diffractometer, XRD) 30
3.2 場發射掃描式電子顯微鏡(Field Emission Scanning Electron Microscopy, FESEM) 31
3.3 電流-電壓特性量測(I-V Curve Measurement) 32
3.4 光譜儀(UV/VIS/NIR Spectrometer) 33
3.5表面輪廓儀(α-step) 33
3.6四點探針(Four Point Probe) 33
第四章實驗方法與步驟 35
4.1元件製作流程圖 35
4.2 元件製作 35
4.2.1 基板準備 36
4.2.2 基板清洗步驟 36
4.2.3 Mo薄膜製備 37
4.2.4 CIS薄膜製備 38
4.2.5 CdS薄膜製備 39
4.2.6 ZnO與AZO薄膜製備 39
第五章結果與討論 41
5.1 Mo薄膜層 41
5.2 CIS薄膜層 42
5.2.1 銅銦金屬前驅物薄膜 42
5.2.2 CIS薄膜 45
5.3 CdS薄膜層 51
5.4 ZnO與AZO薄膜層 52
第六章結論 58
第七章參考文獻 61

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指導教授

利定東(Tomi Li)

審核日期

2012-7-28

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