參考文獻 |
[1] K. Badeker, “Concerning the electricity conductibility and the thermoelectric energy of several heavy metal bonds.”, Ann. Phys.(Leipzig), vol.22, pp. 749, 1907.
[2] P. Barquinha, G. Goncalves, L. Pereira, R. Martins, E. Fortunato, “Effect of Annealing Temperature on The Properties of IZO Films and IZO Based Transparent TFTs,” Thin Solid Films 515:8450–8454, 2007.
[3] J-A. Jeong, Y-S. Park, H-K. Kim, “Comparison of Electrical, Optical, Structural, and Interface Properties of IZO-Ag-IZO and IZO-Au-IZO Multilayer Electrodes for Organic Photovoltaics,” J. Appl. Phys. 107:023111, 2010.
[4] H. Cheun, J. Kim, Y. Zhou, Y. Fang, A. Dindar, J. Shim, C. Fuentes-Hernandez, K. H. Sandhage, B. Kippelen, “Inverted Polymer Solar Cells with Amorphous Indium Zinc Oxide as the Electron-Collecting Electrode,” Opt. Express 18(104):A506-A512 2010.
[5] C. Guillen, J. Herrero, ”Stability of sputtered ITO thin films to the damp-heat test,” Surface and Coatings Technology,Vol.201, Issues 1-2, 309-312, 2006
[6] J. Olivier , , B. Servet, M. Vergnolle, M. Mosca, G. Garry,” Stability/instability of conductivity and work function changes of ITO thin films, UV-irradiated in air or vacuum: Measurements by the four-probe method and by Kelvin force microscopy,” Synthetic Metals, Vol. 122, Issue 1, 87-89, 2001
[7] H-M Kim, S-K Jung, J-S Ahn, Y-J Kang, K-C Je, “Electrical and optical properties of In2O3-ZnO films deposited on polyethyleneterephthalate substrates by radio frequency magnetron sputtering,”Jpn. J. Appl. Phys.42(2003) pp.223-227
[8] Kaijou, et al., United State Patent, Patent No. 5972527 1999.
[9] T.Minami, T. Kakumu, S.Takata,”Preparation of transparent and conductive In2O3–ZnO films by radio frequency magnetron sputtering,”J.Vac.Sci.Technol.A 14, 1704(1996)
[10] H. Hiramatsu, W.S. Seo, K. Kumoto,” Electrical and Optical Properties of Radio-Frequency-Sputtered Thin Films of (ZnO)5In2O3,” Chem. Mater. 10 (1998) pp.3033-3039.
[11] Y. Yan, S.J. Pennycook, J. Dai, R.P.H. Chang, A. Wang, T.J. Marks,” Polytypoid structures in annealed In2O3–ZnO films ,“Appl. Phys. Lett. 73 2585(1998).
[12] T. Minami,” Transparent and conductive multicomponent oxide films prepared by magnetron sputtering ,” J. Vac. Sci. Technol. A 17,1765 (1999).
[13] T. Minami, T. Miyata, T. Yamamoto,” Stability of transparent conducting oxide films for use at high temperatures,” J. Vac. Sci. Technol. A 17 ,1822 (1999)
[14] T. Minami, S. Takata, T. Kakumu, H. Sonohara,” New transparent conducting MgIn2O4?Zn2In2O5 thin films prepared by magnetron sputtering,” Thin Solid Films 270:22-26,1995
[15] T.Minami , T.Kakumu, Y.Takeda, and S.Takata,”Preparation of transparent conducting Zn2In2O5 films by d.c. magnetron sputtering,” Thin Solid Films 317:326-329,1998
[16] H. M. Mott-Smith, I. Langmuir,” The Theory of Collectors in Gaseous Discharges,” Phys. Rev. 28:727-763, 1926
[17] J. G. Laframboise,” Theory of Spherical and Cylindrical Langmuir Probes in a Collisionless, Maxwellian Plasma at Rest,”1966
[18] V.A. Godyak, R.B. Piejak and B.M. Alexandrovich, “Measurements of electron energy distribution in low-pressure RF discharge,” Plasma Source Sci. Technol. 1,36,1992
[19] A. Schwabedissen, E. C. Benck and J. R. Roberts, “Langmuire probe measurement in an inductively coupled plasma source,” Phys. Rev. E, 55,3450-3459,1997
[20] J. M. Hendron, C. M. O. Mahony, T. Morrow, W. G. Grahama, “Langmuir Probe Measurements of Plasma Parameters in the Late Stages of a Laser Ablated Plume,” J. Appl. Phys. 81(5): 2131-2134, 1997.
[21] Guowen Ding, John E. Scharer and Kurt L. Kelly, “Effects of rapidly decaying plasmas on Langmuir probe measurements,” J. Appl. Phys. 84(3): 1236-1240, 1998
[22] M. Nisha, K. J. Saji, R. S. Ajimsha, N. V. Joshy, and M. K. Jayaraj, “Characterization of radio frequency plasma using Langmuir probe and optical emission spectroscopy,” J. Appl. Phys., 99, 033304,2006
[23] J. E. Heidenreich III, J. R. Paraszczak, M. Moisan, and G. Suave, “Electrostatic probe analysis of microwave plasmas used for polymer etching,” J. Vac.Sci. Technol. B 5, 347 (1987)
[24] A. Brockhaus, D. Korzec, F. Werner, Y. Yuan, J. Engemann, “Characterization of a microwave plasma by in situ diagnostics,” Surface and Coatings Technology, 74-75, 431-442 (1995)
[25] H. Amemiya, “Measuring Methods of Plasma Parameters by a Differentiating and Modulating Double Probe,” Jpn. J. Appl. Phys., 27, 694(1988)
[26] van der Pauw, L.J.,"A method of measuring specific resistivity and Hall effect of discs of arbitrary shape," Philips Research Reports 13: 1–9.,1958
[27] van der Pauw, L.J.,"A method of measuring the resistivity and Hall coefficient on lamellae of arbitrary shape," Philips Technical Review 20: 220–224,1958
[28] Tauc, J., "Optical properties and electronic structure of amorphous Ge and Si,". Materials Research Bulletin 3: 37–46,1968
[29] J, Tauc, R. Grigorovici,” Optical Properties and Electronic Structure of Amorphous Germanium,” A. Vancu, Phys. Status Solidi, 15 (1966) 627-637
[30] Buchholz, D. B.; Liu, J.; Marks, T. J.; Zhang, M.; Chang, R. P. H.,” Control and Characterization of the Structural, Electrical, and Optical Properties of Amorphous Zinc−Indium−Tin Oxide Thin Films," ACS Applied Materials and Interfaces. 2009, 1, 2147-2153
[31] H. Chatei, J. Bougdira, M. Remy, P. Alnot, “Optical emission diagnostics of permanent and pulsed microwave discharges in H2–CH4–N2 for diamond deposition,” Surface and Coatings Technology 116–119 (1999) 1233–1237
[32] J.J. Robbins, R.T. Alexandera, W. Xiaob, T.L. Vincentb, C.A. Woldena ,”An investigation of tin oxide plasma-enhanced chemical vapor deposition using optical emission spectroscopy,” Thin Solid Films 406 (2002) 145–150
[33] S. Ilican, Y. Caglar, M. Caglar, B. Demirci,“Polycrystalline indium-doped ZnO thin films : preparation and characterization,” J. Optoelectron Adv. M.., 10( 10), 2592 – 2598,2008
[34] Anderson Janotti ,Chris G. Van de Walle “Oxygen vacancies in ZnO,” Appl. Phys. Lett., 87, 122102, 2005
[35] N. Ito, Y. Sato, P.K. Song, A. Kaijio, K. Inoue, Y. Shigesato,“Electrical and optical properties of amorphous indium zinc oxide films,” Thin Solid Films 496 (2006) 99 – 103
[36] D. C. Paine, B. Yaglioglu, Z. Beiley, S. Lee “Amorphous IZO-based transparent thin film transistors,” Thin Solid Films 516 (2008) 5894–5898
[37] D.H. Shin, Y.H. Kim, J.W. Han, K.M. Moon, R.I. Murakami, “Effect of process parameters on electrical, optical properties of IZO films produced by inclination opposite target type DC magnetron sputtering,” Trans. Nonferrous Met. Soc. China 19(2009) 997-1000
[38] Y. S. Jung, J. Y. Seo, D. W. Lee, D. Y. Jeon, “Influence of DC magnetron sputtering parameters on the properties of amorphous indium zinc oxide thin film,” Thin Solid Films 445 (2003) 63–71
[39] M. Chen, X. Wang, Y.H. Yu, Z.L. Pei, X.D. Bai, C. Sun, R.F. Huang, L.S. Wen, “X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films,” Applied Surface Science 158 (2000) 134–140
[40] J. C. C. Fan, J. B. Goodenough, “X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films,” J. Appl. Phys. 48, 3524 (1977)
[41] S. Major, Satyendra Kumar, M. Bhatnagar, K. L. Chopra,“Effect of hydrogen plasma treatment on transparent conducting oxides,” Appl. Phys. Lett. 49, 394 (1986)
[42] Md Nurul Islam, T.B. Ghosh, K.L. Chopra, H.N. Acharya,“XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films,” Thin Solid Films 280 (1996) 20-25
[43] A. J. Nelson, H. Aharoni, “X‐ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition,” J. Vac. Sci. Technol. A 5, 231 (1987)
[44] S. W. Gaarenstroom, N. Winograd,”Initial and final state effects in the ESCA spectra of cadmium and silver oxides,” J. Chem. Phys. 67, 3500 (1977)
[45] Y. Q. Li, y. Kang, W. J. Ma, H. Q. Wang, J. M. Zhang, “The preparation, electrical and optical properties of indium doped ZnO conductive nanoparticles,” Optoelectronics and Advanced Materials – Rapid Communications 4(2) 2010, p. 211 – 214
[46] M-M Bagheri-Mohagheghi, M Shokooh-Saremi, “The effect of high acceptor dopant concentration of Zn2+ on electrical, optical and structural properties of the In2O3 transparent conducting thin films,” Semicond. Sci. Technol. 18 (2003) 97–103
[47] T. Minami, T. Kakumu, Y. Takeda, S. Takata,“Highly transparent and conductive ZnO-In2O3 thin films prepared by d.c. magnetron sputtering,” Thin Solid Films Vol. 290-291, P 1-5,1996
|