具有低摻雜Ｐ型緩衝層與穿透型Ｐ＋射源結構之600V穿透式絕緣閘雙極性電晶體

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姓名

林書賢(Shu-Hsien Lin) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

具有低摻雜Ｐ型緩衝層與穿透型Ｐ＋射源結構之600V穿透式絕緣閘雙極性電晶體
(600 V PT-IGBT With Low Doping p-buffer Layer and Transparent P+ Emitter)

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摘要(中)

隨著節約能源環保觀念逐漸受重視，綠能科技也相對重要，在中、中高功率電子應用將積極投入研究。本研究將改善IGBT元件在電感負載時，關閉電壓、電流發生振盪的現象，且達到低導通壓降亦可不犧牲耐壓特性，使元件在電路應用上能達低功耗。
在元件設計上，採用垂直式結構擁有溝渠式閘極且運用最新的Field-Stop技術，其技術為背面離子佈植形成P+集極。此外結構中有兩層緩衝層，N+緩衝層形成的方式為離子佈植打入砷當摻雜物，回火活化後再繼續磊晶N-飄移區，所以此元件有比一般FS-IGBT還要厚的N+緩衝層，第二個緩衝層為P型比P+集極濃度低，此層為一開始選用之P型基板，此層介於N+緩衝層與P+集極之間，主要功用是改善振盪的現象。
此篇元件在導通壓降與順向耐壓之間折衷找出最佳的數值，在低導通壓降約1.29伏，集極注入效率為0.28，在如此低注入效率的情況下亦可抑止振盪的現象產生，順向耐壓可達約710伏。

摘要(英)

The concept of energy conservation has become more and more respected. Due to the importance of green energy, medium and medium-high power electronics applications have been concerned. In this study, the proposed devices have no oscillation when turn-off in inductive load and also achieve low on-state voltage without sacrificing forward blocking drop so as to realize lower power consumption in circuitry applications.
The design of the proposed devices adopted vertical structure with trench gate using Field-Stop technique, implantation from backside of the wafer to form the P+ collector. Additionally, there are two buffer layers in this structure, N+ buffer layer is formed by implantation and As as the dopant after annealing to activate then go on epitaxying the N-drift region. So there is thicker N+ buffer layer in this structure than typical FS-IGBT. The second buffer layer is P-type, the concentration is lower than P+ collector, this layer is the initial substrate and between N+ buffer layer and P+ collector interface in order to improve oscillation phenomenon.
We found a tradeoff between on-state voltage and forward blocking drop. On-state voltage is about 1.29 V as injection efficiency at 0.28, in this low injection situation also can suppress oscillation phenomenon when turn-off and forward blocking voltage is approximate 710 V.

關鍵字(中)

★ 低導通電壓
★ 振盪
★ 溝渠式閘極

關鍵字(英)

★ oscillation
★ low on-state voltage
★ trench gate

論文目次

摘要 IV
Abstract V
致謝 VI
目錄 VII
圖目錄 IX
表目錄 XII
第一章導論 1
1.1研究動機 1
1.2應用範圍 1
1.3論文架構 2
第二章背景與研究發展 3
2.1簡介 3
2.2 IGBT功能特點 3
2.3 IGBT早期發展 4
2.4 IGBT近期發展 7
2.4.1 IEGT、CSTBT介紹 8
2.4.2改善關閉波型振盪之新式結構 9
2.5結論 11
第三章穿透式、非穿透式元件結構與操作原理 12
3.1簡介 12
3.2 穿透式、非穿透式基本結構 13
3.3 操作原理 15
3.3.1順向耐壓 17
3.3.2反向耐壓 24
3.3.3順向導通 26
3.3.4閂鎖效應 27
3.3.5短路能力 29
3.4結論 30
第四章元件設計與電性模擬 31
4.1簡介 31
4.2保護環設計之考量 32
4.3製程方法與模擬 35
4.4元件各區濃度設計 39
4.4.1 P-base濃度 39
4.4.2 P+集極與N+緩衝層濃度最佳化 43
4.4.3 P型緩衝層有無對靜態電性影響 47
4.4.4載子生命週期控制 50
4.5結論 55
第五章關閉波型探討 56
5.1簡介 56
5.2電路負載 56
5.2.1無負載 56
5.2.2電阻負載 57
5.2.3電感負載 58
5.2.4 關閉波型振盪現象 60
5.3 p buffer-IGBT與其他不同類型比較 67
5.4結論 72
第六章結論 73
參考文獻 74
附錄A 口試問題回答 77

參考文獻

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指導教授

辛裕明(Yue-Ming Hsin)

審核日期

2011-7-26

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